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研究生:莊曜勵
研究生(外文):Yao-Li Chuang
論文名稱:多孔矽上滲硼化學蒸氣微波電漿輔助鍍膜鑽石成長研究
論文名稱(外文):Growth of Boron-doped Diamond Films on Porous Silicon by Microwave Plasma Chemical Vapor Deposition
指導教授:陽台發
指導教授(外文):Tai-Fa Young
學位類別:碩士
校院名稱:國立中山大學
系所名稱:物理學系研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2003
畢業學年度:91
語文別:英文
論文頁數:98
中文關鍵詞:X光繞射傅氏紅外線轉換光譜多孔矽滲硼鑽石薄膜拉曼光譜化學蒸氣微波電漿輔助系統奈米管狀結構鑽石薄膜
外文關鍵詞:FTIRBoronXRDMPCVDPorous siliconRamannano-wiresDiamond
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鑽石薄膜由於其優異的性質,在半導體元件及光學元件的應用上是深具潛力的。本論文安裝完成一自行設計之化學蒸氣微波電漿輔助系統並利用兩階段之成核及成長製程成長滲硼鑽石薄膜在矽基板和多孔矽基板上。本論文研究了溫度,微波功率及滲雜B2O3濃度效應對成長所造成的影響。實驗是利用B2O3和 C2H5OH的混合液作為滲雜源以Ar氣為載運氣體,並以控制Ar流量變化硼濃度混入CH4 和H2 的反應氣體當中。實驗的樣品特性經由拉曼光譜儀(Raman),X光繞射儀(XRD)及傅氏紅外線轉換光譜(FTIR)分析。從SEM的圖像發現有奈米管狀結構出現在較高滲雜濃度的鑽石薄膜中。滲硼的鑽石薄膜在較高的成長溫度環境中成長速度較快且其晶粒的形狀也會變成多晶的型態,微波的功率增加並不會提高鑽石成長之速率。從實驗的結果發現鑽石膜成長是階段性的。當滲硼鑽石薄膜成長到某個厚度階段時,其成長機制將改變。此實驗成功得不需經成核步驟即可在多孔矽基板上成長出鑽石薄膜。
Synthetic diamond thin films have potential for fabricating high-temperature semiconducting and optical devices because of its extraordinary properties. In this work, a microwave plasma chemical vapor deposition system has been setup. A two-steps deposition process will be applied for the growth of boron-doped diamond on silicon and on porous silicon. The effects of temperature, microwave power and of doping concentration of B2O3 have been studied by varying the growth parameters. The doping source of B2O3 solved in C2H5OH is applied with carrying gas of Ar. To vary the concentration of boron with the flow of Ar is controlled mixing into a reaction gas of CH4 and H2 mixture. Polycrystalline diamond thin films are examined by Raman, XRD and FTIR. In the SEM photograph a nano-wires structure has been found for higher doping of B2O3. A higher temperature the growth rate of the boron-doped diamond films will increase and the shape of crystallites will tend to polycrystalline. The diamond growth is in multi steps and the mechanism of deposition will change when the boron-doped diamond film grows up to a critical thickness. In this work a smooth diamond film was successfully grown on porous silicon without the step of nucleation.
Contents
中文摘要………………………………………………………………I
Abstract………………………………………………………………..II
Contents……………………………………………………………….III
Table captions…………………………………………………………V
Figure captions………………………………………………………..VI
Chapter 1.Introduction……………………………………………….…1
1-1 The structures of diamond and carbon…………………………1
1-2 Properties of diamond………………………………………….1
1-3 Properties of porous silicon……………………………………3
1-4 CVD techniques of diamond…………………………………..4
Chapter 2. Growth Mechanisms of Diamond CVD…………………….6
2-1 Fundamentals of chemical vapor deposition…………………...6
2-2 Mechanism of diamond formation……………………………..8
Chapter 3. Experimentals…………………………………………….…11
3-1 Substrate preparation…………………………………………..11
3-1.1 Silicon and porous silicon substrates.…………………….11
3-2 Microwave plasma CVD system………………………………12
3-3 Deposition parameters…………………………………………13
3-3.1 H2 plasma precleaning………………………………….…13
3-3.2 Nucleation…………………………………………………13
3-3.3 Growth of the doped diamond films………………………14
3-4 Characterizations of diamond films……………………………14Chapter 4. Results and Discussions……………………………………17
4-1 The effect of different substrates for the nucleation……………..17
4-2 The effect of different temperature on doped-diamond………...17
4-3 The characteristic of the doped-diamond and the effect of doping concentration of B2O3……………………………….…………20
4-4 The effect of microwave power on growth of doped-diamond…24
4-5 Boron doped diamond thin films grown on porous silicon…….25
4-6 The Effect of nucleation of diamond thin films grown on porous silicon………………………………………………………….29
Chapter 5.Summery…………………………………………………....31
Reference………………………………………………………………33
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