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研究生:郭庭旺
研究生(外文):Ting-Wan Kuo
論文名稱:應用於記憶體元件之電壓提昇電路與低功率離散餘弦轉換之晶片設計與實作
論文名稱(外文):IC Design and Implementation of A Boosted Voltage Generator Used in Memory Devices and Low Power Discrete Cosine Transform
指導教授:王朝欽
指導教授(外文):Chua-Chin Wang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:電機工程學系研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:91
語文別:中文
論文頁數:66
中文關鍵詞:提昇電壓產生器昇壓級離散餘弦轉換逆偏壓產生器
外文關鍵詞:DCTBack-bias GeneratorPumping StageBoosted Voltage Generator
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本論文的第一部份提出了使用四個不同相位的三倍電壓產生器。正負極性電壓的產生可用來當做提昇電壓及逆偏壓產生器,所提出的設計是由傳輸電晶體及切換電容所實現。

第二部分提出了低功率離散餘弦轉換。新的離散餘弦轉換及反轉換適合做為可攜性的應用,處理一個8×8區塊的圖素需要花更多的時脈週期,但縮小了晶片的面積,由於減少晶片面積,使得功率消耗下降。
The first topic of this thesis is a novel voltage tripler using 4 clocks with different phases. Both the positive and negative polarities of the voltage are generated to serve as the boosted voltage and the back bias voltage. The proposed design is carried out by pass transistors and switched capacitors.

The second topic is a low-power discrete cosine transform (DCT) processor. It is suitable for portable applications. The number of clock cycles needed for processing an 8×8 block of pixels is increased, but the chip area is reduced. The reduction of the chip area leads to the reduction of the power dissipation.
摘要 i
Abstract ii
第一章 簡介 1
1.1 研究動機 1
1.2 論文目的 2
1.3 論文大綱 3
第二章 應用於記憶體元件的電壓提昇電路 4
2.1 概論 4
2.2 原理架構說明 5
2.2.1 正電壓提昇電路 5
2.2.2 負電壓提昇電路 7
2.2.3 雙極性電壓產生器 9
2.3 晶片模擬結果 10
2.4 效能比較 13
2.4.1 Dickson電壓提昇電路 13
2.4.2 NCP2電壓提昇電路 14
2.4.3本晶片的電壓提昇電路 16
2.4.4 模擬效能的比較 16
2.5 晶片佈局 19
2.6 測試方法及結果 20
2.7 晶片預計規格與實際量測結果 23
2.7.1 晶片預計規格 23
2.7.2 實際量測結果 23
2.8 結論與討論 24
2.9 應用實例 32
2.9.1 在DRAM上的應用 32
2.9.2 在非揮發性記憶體中寫入及消除動作的應用33
第三章 低功率離散餘弦轉換 35
3.1 概論 35
3.2 架構簡介 36
3.3 晶片佈局 40
3.4 晶片的模擬 40
3.5 佈局驗證 42
3.5.1 FPGA驗證 42
3.5.2 TimeMill模擬波形 43
3.6 結論 44
第四章 結論 45
參考文獻 46
附錄 49
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