(1) 鄭晃忠,史德智, “極大型積體電路之鐵電材料”,電子月刊, 第五卷第六期, 1999年6月
(2) 陳銘森, “鎳酸鑭電極對鋯鈦酸鉛溶凝膠製作與特性影響之研究” ,清華大學,博士論文,(1996)(3) Ismunandar and Brendan J. Kennedy , “Structure of ABi2Nb2O9(A=Sr,Ba): Refinement of Powder Neutron Diffraction Data” J.Solid State Chem.,126 p135(1996)
(4) 楊閔智, “溶凝膠法製作SrBi2Ta2O9鐵電薄膜研究” ,清華大學, 碩士論文 , p3-7 , (2001)(5) 陳瀅如, 添加微細粉對鈦酸鉛鍍膜製程與特性之研究, 清華大學碩士論文 (1998)(6) 陳三元, 強介電薄膜之液相化學法製作, 工業材料, 108, (1995)(7)Jeong Soo Lee, Hyun Ja Kwon, S. J. Hyun, and T. W. Noh, “Structure characterization of the low-temperature phase in Sr-Bi-Ta-O films” , Appl. Phys. Lett. 74 pp.2690-2692 (1999)
(8)Mark A. Rodriguez, Timothy J. Boyle, Bernadette A. Hernandez, Catherine D. Buchheit, and Michael O. Eatough, “Formation of SrBi2Ta2O9 : PartⅡ. Evidence of a bismuth-deficient pyrochlore phase” J. Mater. Res. Vol.11 pp.2282-2287 (1996)
(9)Chung-Hsin Lu, Bu-Kuan FANG and Cheng-Yen WEN, “Structure Identification and Electrical Properties of the New Pyrochlore Phase in the Sr-Bi-Ta-Ti-O system” Jpn. J. Appl. Vol.39 pp.5573-5576 (2000)
(10)Ichiro KOIWA, Yukihisa OKADA, Juro MITA, Akira HASHIMOTO and Yoshihiro SAWADA, “Role of Excess Bi in SrBi2Ta2O9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method” Jpn. J. Appl. Phys. Vol.36 pp.5904-5907 (1997)
(11)Tetsuya OSAKA, Akira SAKAKIBARA, Tomonori SEKI, Sachiko ONO, Ichiro KOIWA and Akira HASHIMOTO, “Phase Transition in Ferroelectric SrBi2Ta2O9 Thin Films with Change of Heat-treatment Temperature” Jpn. J.Appl. Phys. Vol.37 pp.597-601 (1998)
(12) Timothy J. Boyle, Catherine D. Buchheit, Mark A. Rodriguez, Husam N. Al-Shareef, and Bernadette A. Hernandez, “Formation of SrBi2Ta2O9 : PartⅠ. Synthesis and characterization of a novel “sol-gel” solution for production of ferroelectric SrBi2Ta2O9 thin film”J. Mater. Res. Vol. 11 pp.2274-2281 (1996)
(13) 呂正傑 詹世雄, 鐵電記憶體簡介, 毫微米通訊第五卷第四期
(14) 彭成鑑, 強介電陶瓷材料在動態隨機記憶體上的應用, 工業材料, 107, (1995)(15) Y. Sakashita, H. Segawa, K. Tominaga, and M. Okada,“Dependence of electrical properties on film thickness in Pb(ZrxTi1—x)O3 thin films produced by metalorganic chemical vapor deposition”J. Appl. Phys. 73,7857 (1993)
(16) P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and J. Van Veldhover, “ Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer model” J.Appl. Phys. 76, 2405 (1994)
(17) H. D. Chen, K. K. Li, C. J. Gaskey, and L. E. Cross, Mater. Res. Soc.Symp. Proc. 433, 325 (1996)
(18) S. T. Mckinstry, C. A. Randall, J. P. Maria, C. Theis, D. G. Schlom, J.Shepard, Jr., and K. Yamakawa, Mater. Res. Soc. Symp. Proc. 433, 363 (1996)
(19)S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang, Phys. Rev. B 54, R14 337 (1996)
(20)S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang, Phys. Rev. B 55, 3485 (1997)
(21)H.OKINO, T.IDA, H. EBIHABA, H. YAMADA, K. MATSUSHIGE and T. YAMAMOTO , “Domain Orientation Imaging of PbTiO3 Single Crystals by Vertical and Lateral Piezoresponse Force Microscopy” Jpn. J. Appl. Phys. Vol. 40
pp. 5828—5832 (2001)
(22)M.B. Kelman , L. F. Schloss , and P. C. Mclntyre , “ Thickness-dependent phase evolution of polycrystalline Pb(Zr0.35Ti0.65)O3 thin films” Appl. Phys. Lett. 80, 1258 (2002)
(23) J. Zhu, X. Zhang, Y. Zhu, and S. B. Desu, “Size effects of 0.8SrBi2Ta2O9—0.2Bi3TiNbO9 thin films “ J. Appl. Phys. 83, 1610 (1998)
(24) M. Nagata, D. P. Vijay, X. B. Zhang, and S. B. Desu, Phys. Status Solidi A 157, 75 (1996)
(25) Di Wu, Aidong Li,a) Huiqin Ling, Tao Yu, Zhiguo Liu, and Naiben Ming , “ Characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films with different thicknesses” J.Appl. Phys. 87, 1795 (2000)
(26) Ryuta Iijima , “ Factors controlling the a-axis orientation of strontium bismuth tantalate thin films fabricated by chemical solution deposition” Appl. Phys. Lett. 79, 2240 (1999)
(27) 汪建民, “熱分析”, 材料分析,2000,p556-563
(28) 楊詔凱“利用感應耦合電漿質譜法及電花剝蝕感應耦合電漿光譜法用於彈頭鉛同位素分析及合金材料中微量元素的直測分析研究” ,清華大學, 碩士論文 (2001)(29) S. B. Desu, C. H. Peng, L. Kamnerdiana, and P. J. Schncle, Mater. Res.Soc. Symp. Proc. 200, 319 (1990)
(30) D. M. Tahan, A. Safari, and L. C. Klein, J. Am. Ceram. Soc.0 79
1594 (1996)
(31) F.P.Jona ,G.Shirane,Ferroelectric Crystals,Pergamon Press (1962)
(32)W-C. Kwak and Y-M Sung , “Crystallization kinetics of sol-gel derived (1x)SrBi2Ta2O9xBi3TiTaO9 ferroelectric thin films “J. Mater. Res. 17, 1463 (2002)
(33)G.D.Hu, J.B.Xu, I.H.Wilson, W.Y.Cheung, and S.P.Wong, “ Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition” Appl. Phys. Lett. 74 , 3711 (1999)
(34) H. N. Al-Shareef, D. Dimos, T. J. Boyle, W. L. Warren, and B. A. Tuttle, Qualitative model for the fatigue-free behavior of SrBi2Ta2O9”Appl. Phys. Lett. 68, 690 (1996)
(35)K.R.Udayakumar,P.J.Schuele,J.Chen,S.b.Krupanidhi,and L.E.Cross, “Thickness-dependent electrical characteristics of lead zirconate titanate thin films”J.Appl. Phys. 77, 3981 (1995)
(36)S. B. Desu,T.K.Li., “Fatigue-free SrBi2(TaxNb1−x)2O9 ferroelectric thin films “Mater.Sci.Eng.B34, L4 (1995)
(37)T-C.Chen, T .Li , X. Zhang , and S. B. Desu , “The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films” J. Mater.Res.Vol.12, 1569 (1997)
(38)T.Noguchi,T.Hase,Y.Miyasaka,”Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature”Jpn.J.Appl.
Phys.,Part1, 35, 4900 (1996)
(39)Y. Shimakawa, Y.Kubo ,Y. Nakagowa, T.Kamiyama, H.Asano ,F. Izumi, “Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9 ”Appl. Phys. Lett.,74,1904 (1999)
(40)P. Tejedor, C. Ocal,E. barrena , R. Jimenez, C. Alemany ,and J. Mendiola, “Composition-related effects of microstructure on the ferroelectric behavior of SBT thin films”Appl. Sur. Sci. ,175,759 (2001)
(41) J. Zhu, X. Zhang, Y. Zhu, and S.B. Desu,”Size effects of 0.8SrBi2Ta2O9—0.2Bi3TiNbO9 thin films “J. Appl. Phys. 83, 1610
(1998)
(42)K. Franke ,G. Matin , M. Weihnacht, and A. V. Sotnikov ,Sol. Sta. Comm. “SrBi2Ta2O9 has only two polar axes — a problem for high density ferroelectric memory devices”,119, 117 (2001)
(43) S. B. Desu, and D.P.Vijay,” c-Axis oriented ferroelectric SrBi2(TaxNb2−x)O9 thin films “Mater.Sci.Eng.B32, 83 (1995)
(44)Y-M. Sung, “Nonisothermal phase formation kinetics in sol-gel-derived strontium bismuth tantalite”J. Mater. Res. 16, 2039 (2001)