離子束對材料有分析或改質的功能，對材料科學是一不可或缺的工具。本論文以國立清華大學的加速器為主，以其產生之離子束進行材料科學上的應用研究，內容包括有：溝道拉賽福回向散射、彈性回跳量測、粒子誘發特性X射線法等分析系統的架設工作；及屬於材料表面改質方面的研究：離子佈植射束線建立、回跳佈植法製備放射性α射源；並有一節敘述如何以部分鍍膜偵檢器量測材料對離子的阻止本領。對每一分項題目均各以一章節簡明地敘述與討論其原理、實驗方法與結果。結果顯示有關離子束分析的系統已成功的架設於加速器上；離子佈植射束線與放射性α射源製備方面，亦顯示有深入研究的需要與應用的價值。

Ion Beam is a powerful tool in Material Research due to the unique capability of analysis and modification of material. The thesis reports my research works using the ion beam produced from accelerators in Tsing Hua University, including RBS/w Channeling, Elastic Recoiled Detection, Particle Induced X-ray Emission, Ion Implantation,αradioactive source preparation by recoiled implantation and stopping power measurement using partial coated Si detector. We have successfully built a complete detection and analysis system for the studies of RBS/w Channeling, Elastic Recoiled Detection, and Particle Induced X-ray Emission. The results of Ion Implantation andαradioactive source preparation show the potential for further applications and researches of material science.

目錄
頁次
摘要 Ⅰ
謝誌 Ⅲ
目錄 Ⅳ
第一章緒論 1
第二章材料應用之離子束分析系統 10
2.1溝道拉賽福回向散射分析（RBS/w channeling） 10
2.1.1 簡介 10
2.1.2 原理 11
2.1.3 實驗方法 14
2.1.4 結果與討論 18
2.1.5 小結 20
2.2彈性回跳量測（ERD） 31
2.2.1 簡介 31
2.2.2 原理 31
2.2.3 實驗方法 32
2.2.4 應用結果與討論 33
2.2.5 小結 34
2.3粒子誘發特性X射線（PIXE） 40
2.3.1 簡介 40
2.3.2 實驗方法 41
2.3.3 結果與討論 41
2.3.4 小結 42
第三章離子佈值與阻止本領量測 48
3.1離子佈植射束線建立研究 48
3.1.1 簡介 48
3.1.2 低能量離子佈植射束線設立與特性 49
3.1.3 應用實例 50
3.1.4 小結 51
3.2 以回彈佈植技術製作阿伐射源 58
3.2.1 簡介 58
3.2.2 射源製備 58
3.2.3 結果與討論 59
3.2.4 小結 61
3.3阻止本領的量測 66
3.3.1 簡介 66
3.3.2 實驗 67
3.3.3 結果與討論 68
3.3.4 小結 69
第四章 總結與建議 76
參考文獻 79

References
R1-1. J. R. Tesmer, et. al., Handbook of modern ion beam material analysis, Materials Research Society, 1995.
R1-2. J. W. Mayer, E. Rimini, Ion beam handbook for material analysis, Academic press, Inc., 1977.
R1-3 G. Dearnaley, el al., Ion implantation, American Elsevier, 1980.
R1-4 Claudio Tuniz, John R. Bird, David Fink, and Gregory F. Herzog, Accelerator Mass Spectrometry, CRC Press LLC.
R1-5 張通和 等編著，離子注入表面優化技術學院，冶金工業出版社，1992，中國大陸。
R1-6. 牛寰，真空技術與應用第二十章第二節小型加速器（范氏加速器）真空系統，國科會精儀中心出版，民90。
R2-1. W.K. Chu , J.W. Mayer , M-A. Nicolet , Backscattering spectrometry, Academic press, Inc., 1978.
R2-2. Bogh, E., Defect studies in crystals by means of channeling. Can. J. of Phys. 46(1968)653-662.
R2-3. 吳秀錦，拉賽福回向散射分析及其應用，科儀新知第十七卷三期84.12.
R2-4. Feldman, L. C., Mayer, J. W., Picraux, S. T., 1982. Materials analysis by ion channeling, Ch. 5, Academic Press, New York.
R2-5. Computer program, National Instrument Inc.
R2-6. Yamamoto, Y., Automatic beam alignment for channeling measurements in Rutherford backscattering spectrometry. Nucl. Instr. and Meth. 190(1981)171-176.
R2-7. Picraux, S. T., Follstaedt, D. M., Baeri, P., Campisano, S. U., Foti, G., Rimini, E., Depth Profile Studies of Extended Defects Induced by Ion-Implantation in Si and Al. Radiat. Effects 49(1980) 75-79.
R2-8. Thornton, J. I., Hemment, P. L. F., and Wilson, I. H., Nucl. Instr. and Meth. B19/20(1987)307.
R2-9. H. Niu, L.G. Yuan, W.T. Chou, J.H. Liang, S.-C. Wu,. A fast automatic RBS/w channeling system for damage depth profiling., Nucl. Instr. and Meth. 56(2002)627-631.
R2-10. B. Terreault et al., J. Vac. Sci. Technol., 14(1977)492.
R2-11. Jorge Tirira, Yves Serruys, and Patrick Trocellier, “Forward Recoil Spectrometry” (Plenum Press, New York and London, 1996).
R2-12. E. Szilagyi, F. Paszti, A. Manuaba, C. Hajdu and E. Kotai, B43(1989)502.
R2-13. A. Turos, and O. Meyer, Nucl. Instr. and Meth. B4 (1984) 92.
R2-14. Ziegler, J.F., Biersack, J.P., 1996. SRIM: the Stopping and Range of Ions in Matter, Version 96.07, IBM-Research, Yorktown.
R2-15. L.R. Doolittle, Nucl. Instr. and Meth. B9 (1985) 344.
R2-16. L.R. Doolittle, and M. Thompson, Computer code RUMP, Computer Graphics Service, NY, 1988.
R2-17. H. Niu, S-C Wu, S-L Huang, J. Lin, and R-C Deng, “Hydrogen depth profiling of SiNx films by the detection of recoiledd protons,” Nuclear Instruments and methods in Physics Research, B79(1993)536.
R2-18. Tzu-Yin Lin, Jenq-Gong Duh, Chen-Kuei Chung and Huan Niu, “Fabrication of low-stress plasma enhanced chemical vapor deposition silicon carbide films” Jpn. J. Appl. Phys. Vol. 39 (2000) pp. 6663-6671.
R2-19. S.A.E. Johansson and J.L. Campbell, PIXE: A novel technique for elemental analysis. Wiley, New York (1988).
R2-20. S.A.E. Johansson, J.L. Campbell, and K.G. Malmqvist, Particle induced X-ray emission spectrometry, Wiley, New York (1995).
R2-21. Guelph PIXE software package, download from: http://www.physics.uoguelph.ca/PIXE/gupix/gup_new.html
R2-22. Chin-Jong Chen, and Shu-Cheng Yu, A substructural study on Hokutolite, Memoir of the geological society of china, No. 6, pp. 229-237, 2 Figs., 4 Pls., 3 Tabs., December 1984.
R3-1. Handbook of Ion Implantation Technology , edited. by J.F. Ziegler , Elsevier Science Publishers B.V. ,(1992),p.v.
R3-2. 王勝虎，溝道效應系統建立及矽鍺固相磊晶分析，清華大學碩士論文，民88。
R3-3. 賴仲彥，以溝道效應分析技術探討矽自我佈植之輻射損傷研究，清華大學碩士論文，民88。
R3-4. Jenq-Horng Liang, Shiaw-Lung Chiang, Chin-Tsai Chen, Huan Niu, Mao-Sheng Tseng, “Depth profiles of cluster-ion-implanted Bsi in silicon”, Nuclear Instruments and methods in Physics Research, Vol. B190, p. 767-771(2002)
R3-5. Lai CH, Yang CH, Haung RT, Chen CW, Chen FR, Kai JJ, Niu H,” Effects of structure and ion irradiation on the exchange field of NiFe/NiMn”, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 239 (1-3): 390-395 Sp. Iss. SI FEB 2002.
R3-6. W.-K. Chu, J. Liu, J. Lin, X. Liu, L. Shao, Q. Li, P. Ling, in: Proceedings of the Sixteenth International Conference on Application of Accelerator in Research and Industry, 1-4 November 2000, p. 1.
R3-7. W. van der Eijk, W. Oldenhof, and W. Zehner, Preparation of thin sources, a review, Nucl. Instr. and Meth. 112(1973)343-351.
R3-8. A. E. Lally, and K. M. Glover, Source preparation in alpha spectrometry, Nucl. Instr. and Meth. 223(1984)259-265.
R3-9. H. Nilsson, H. Rameback, and M. Skalberg, An improved method for -source preparation using neodymium fluoride coprecipitation. Nucl. Instr. and Meth. A462(2001)397-404.
R3-10. H. L. Liu, S. S. Gearhart, J. H. Booske, and R. F. Cooper, Recoil implantation method for ultrashallow p+/n junction formation, J. Appl. Phys. 87(2000)1957-1962.
R3-11. L. Shao, X. Lu, J. Jin, Q. Li, J. Liu, P.A.W. van der Heide, and W. K. Chu, High-energy recoil implantation of boron into silicon, Appl. Phys. Lett. 76(2000)3953-3955.
R3-12. J. C. Pivin, D. Dimova-Malinovska, M. Sendova-Vassileva, and M. Nikolaeva, Mixing of metals in Si with 4.5 MeV Au ions, Nucl. Instr. and Meth. B174(2001)453-462.
R3-13. L. R. Doolittle and M. Thompson, Computer code : RUMP, Computer Graphics Service, NY, 1988.
R3-14. International Commission on Radiation Units and Measurements (ICRU). ICRU Report 49. 1993.
R3-15. D. C. Santry, and R. D. Werner, Nucl. Instr. and Meth. B53(1991)7-14.
R3-16. A. Kuronen, J. Raisanen, J. Keinonen, P. Tikkanen, and E. Rauhala, Nucl. Instr. and Meth. B35(1988)1-6.
R3-17. M. Abdesselam, J. P. Stoquert, G. Guillaume, M. Hage-Ali, J.J. Grob and P. Siffert, Nucl. Instr. and Meth. B61(1991)385-393.
R3-18. N. Bohr, K. Dan. Vidensk. Selsk. Mat.-Fys. Medd. 18(1948) no. 8.
R3-19. J. Lindhard and M. Scharff, K. Dan. Vidensk. Selsk. Mat.-Fys. Medd. 27(1953)2057.