臺灣博碩士論文加值系統

在這篇論文中，我們詳細地分析了閘極氧化層厚度介於三點三奈米以及一點二奈米之間的金氧半電晶體其操作可靠度。由於厚度超過五奈米之閘極氧化層其硬崩潰現象會直接導致電晶體操作特性的破壞，電晶體的可靠度一直以來被視同氧化層可靠度，且大部分的電晶體可靠度研究多藉由氧化層可靠度研究來達成。然而，當氧化層厚度薄至三奈米以下後，將氧化層可靠度同等為電晶體可靠度的作法卻面臨質疑。為了針對電晶體之可靠度進行研究，我們檢視了各種造成金氧半電晶體操作特性衰退的物理機制，並且選定了幾個主要且具代表性的元件特性參數作為評斷其正常操作的標準。在幾個具代表性的元件特性參數中，我們發現電晶體開啟時的汲極導通電流衰退與電晶體關閉時的汲極漏電流增加是影響具有奈米閘極氧化層電晶體操作可靠度最鉅的兩個因素。尤其當氧化層厚度薄至三奈米以下時，在閘極和汲極之間所發生的氧化層軟崩潰現象不只影響了電晶體關閉狀態下的操作特性，其所造成的閘極漏電流更遠超過一般所能容忍的電晶體正常操作定義。因此，藉由相關於這兩個主要元件特性參數-電晶體開啟時的汲極導通電流與電晶體關閉時的汲極漏電流-的實驗數據分析以及理論計算，我們提出一套針對電晶體操作可靠度的系統化分析模式，並建立起一個整合的電晶體操作可靠度模型。對於即將趨近一奈米的半導體科技而言，相信我們所提出的分析模式以及整合可靠度模型會有些許的幫助。

In this study, functional reliability of MOS transistors with oxide thickness ranging from 3.3 nm down to 1.2 nm is investigated in detail. In contrast with most reliability tests which focus on oxide reliability, various mechanisms resulting in transistor performance degradation are examined, while the on-state drain conduction current and off-state drain leakage current are the two most decisive device parameters that dominates MOS transistor functional reliability in the ultra-thin oxide regime. The degradation of off-state drain leakage current is caused by lately observed oxide soft-breakdown within the gate-to-drain overlap area, and its dominance tends to grow with scaling oxide thickness. Through experimental data analyses and theoretical calculations, we verified the dependences of device lifetime on oxide electric field, failure rate and device dimension. On the basis of physical mechanisms and models, we propose a methodology for MOS transistor functional reliability evaluation and a correlated unified functional reliability model which may contribute to the microelectronics technology development in the near future.

Abstract
List of Contents
List of Figures
List of Tables
Chapter One Introduction
Chapter Two Review of Ultra-thin Oxide Reliability
2.0 Introduction
2.1 Fundamental ultra-thin oxide characteristics
2.1.1 Current-voltage characteristics
2.1.2 Breakdown characteristics
2.2 Reliability evaluation of ultra-thin oxide
2.2.1 Definition of oxide failure
2.2.2 Stress methods
2.2.3 Reliability projection procedure
2.3 Physical and predictive models of oxide reliability
2.3.1 Anode-hole injection model
2.3.2 Thermochemical model
2.4 Oxide reliability and MOS transistor functional reliability
Chapter Three Experimental
3.0 Introduction
3.1 Device structure and oxide film preparation
3.2 Experimental setup
3.2.1 Stress condition setup
3.2.2 Measurement setup
3.3 Characterization techniques
3.3.1 Fundamental device characteristics extraction
3.3.2 Device lifetime extraction
3.3.3 Quantum effects and poly depletion
Chapter Four Fundamental I-V Characteristics of MOS Devices
4.0 Introduction
4.1 Fundamental I-V characteristics of MOS capacitors
4.2 Fundamental I-V characteristics of MOS transistors
4.2.1 Common I-V characteristics
4.2.2 Low-drain I-V characteristics
4.2.3 High-drain I-V characteristics
4.3 Other I-V characteristics of MOS transistors
4.3.1 Channel hot electron injection
4.3.2 Band-to-band tunneling induced gate current
Chapter Five MOS Transistor Functional Reliability
5.0 Introduction
5.1 Qualitative description of MOS transistor performance degradation
5.1.1 Fundamental I-V measurement
5.1.2 I-V characteristics degradation
5.2 Quantitative evaluation of MOS transistor functional reliability
5.2.1 Representative device parameter and relative criterion
5.2.2 Device parameter degradation
5.3 Lifetime extraction and projection
Chapter Six Establishment of The Unified MOS Transistor Functional Reliability Model
6.0 Introduction
6.1 Essentials of a reliability model
6.2 Reliability Physics: linear-E model? 1/E model?
6.2.1 Theoretical calculation of the linear-E and the 1/E models
6.2.2 Experimental data analysis of the linear-E and the 1/E models
6.3 Reliability statistics
6.3.1 Weibull distribution function
6.3.2 Weibull plot and Weibull slope extraction
6.4 The unified MOS transistor functional reliability model
Chapter Seven Conclusion
References
Vita

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