臺灣博碩士論文加值系統

在本論文中，主要在探討異質接面雙極性電晶體中鈍化層與可靠度之分析。在鈍化層的研究上，我們提出以硫化銨液體對磷化銦鎵/砷化鎵異質接面雙極性電晶體做鈍化層的處理，其結果發現與傳統磷化銦鎵鈍化層做比較，在直流特性上有顯著的改善，而且均優於未做鈍化層之元件。
在另一方面，我們亦即針對其對溫度變化所造成的影響，包括理想因子，輸出特性，與補償電壓等特性。經由實驗後發現，當溫度升高時，所有的特性皆會隨溫度的上升，而有明顯變差的趨勢。

In this thesis, the analysis of passivation and reliability for heterojunction bipolar transistor(HBT) is investigated. For passivation, the InGaP/GaAs HBT carried out with the (NH4)2S solution to passivated is reported . Compare the sulfur-passivated HBT with InGaP-passivated HBT, an improvement is found for DC characteristics, and both better than non-passivated HBT.
Otherwise, we put emphasis on the effect with temperature, including ideality factor, I-V characteristic, and offset voltage. From the results of experiment, it is found that these characteristics will be poor with temperature stress.

Abstract (Chinese)…………………………………………………………Ⅰ
Abstract (English)…………………………………………………………Ⅱ
Contents………………………………………………………………………Ⅲ
Figure captions……………………………………………………………Ⅴ
Chapter 1 Introduction……………………………………………………1
Chapter 2 Passivation Analysis for HBT………………………………2
2-1 Introduction ………………………………………………2
2-2 Device Structure and Fabrication………………………4
2-3 Theory and Analysis ………………………………………8
2-3.1 Photoluminescence (PL)………………………………8
2-3.2 Transmission Line Model (TLM)………………………9
2-3.3 Ideality factor………………………………………13
2-3.4 Current gain…………………………………………………………14
2-4 Experimental Results and Discussion……………………………16
2-5 Conclusions……………………………………………………………20
Chapter 3 Reliability Analysis for HBT………………………………21
3-1 Introduction…………………………………………………21
3-2 Device Structure and Fabrication………………………22
3-3 Theory and Analysis………………………………………23
3-3.1 Forward current density……………………………23
3-3.2 Thermal effect…………………………………………25
3-3.3 Energy gap………………………………………………25
2-3.4 Offset voltage…………………………………………26
3-4 Experimental Results and Discussion……………………………28
3-5 Conclusions……………………………………………………………30
Chapter 4 Conclusions and Expectations………………………………31
References……………………………………………………………………32
Figures………………………………………………………………………37

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