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研究生:鄭恆餘
論文名稱:微晶鑽石之製備與電漿鞘對鑽石薄膜成長影響之研究
論文名稱(外文):Study of micro-diamond films fabrication and the impact of plasma sheath on growing diamond thin films
指導教授:林啟瑞林啟瑞引用關係黃聰耀黃聰耀引用關係
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:機電整合研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:91
語文別:中文
論文頁數:75
中文關鍵詞:鑽石薄膜電漿鞘電位降化學氣相沈積
外文關鍵詞:diamond filmsplasma sheathMPCVD
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本研究以自行設計組裝之氣冷式微波電漿氣相沈積系統,通入甲烷及氫氣成功地達到合成微晶鑽石薄膜的目的;藉由實驗參數的調整與控制,已能成功的合成晶形良好的高品質鑽石薄膜。實驗結果亦顯示,所得到的鑽石薄膜晶粒大小約在介於1-2μm之間,而成核密度則達到6.8×1012 cm-2。此結果將有助於本實驗室對於奈米鑽石膜之開發。
此外在實驗中發現,電漿幾何形狀對薄膜成長亦有顯著影響;由於電漿鞘電位降的影響下,驅使電漿中帶正電離子往基板上移動,由於各區與電漿距離遠近不同,造成各區被活性氫原子蝕刻程度不一,因此在基材上所成長之鑽石薄膜品質優劣成區域性分佈。較接近電漿鞘之基材位置可得較佳的品質;再者,由於電漿中帶正電離子轟擊基板的效應,在基板與鑽石薄膜間有碳化矽層的出現。如此一來不但解決了矽基板與鑽石薄膜間因晶格常數差異過大導致成核不易的缺點,更進一步促進成核,達到了在無須外加負偏壓的情況下,亦可有較高的成核密度。
In this study, the high complete diamond thin films have been successfully grown on silicon substrates by chemical vapor deposition with purified methane and hydrogen used as the reactants in a microwave plasma reactor, which was designed and set up by our group. In this process, the diamond grain size was observed in 1 to 2 μm by SEM observation, and the diamond nucleation densities in excess of 1012 cm-2 were obtained. Mentioned results would be helpful to synthesize nanocrystalline diamond in upcoming days.
Beside, the influence of diamond films growth with the plasma sheath potential drop was discussed in this study. Results showed that due to the plasma sheath potential drop, the positive ions were driven to bombard the substrate or etch the films. This phenomenon made different quality of each growth region on silicon, wafer and the formed interlayer of silicon carbide. Because of the influence of plasma sheath potential drop, SiC layer formed, that induced the less mismatch of lattice constant. Results also suggest the nucleation of diamond thin films was boosted without adding other bias voltage
中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 v
圖目錄 vi
第一章 序論 1
1.1 前言 1
1.2 鑽石在工業上之應用 1
1.3 研究動機 2
第二章 文獻回顧 5
2.1碳的形式 5
2.2鑽石合成 11
2.2.1 發展沿革 11
2.2.2 合成方法 12
2.2.2.1 高溫高壓法 12
2.2.2.2 氣相合成法 13
2.3 電漿輔助合成鑽石薄膜原理 23
2.3.1 電漿原理與電漿鞘電位降 23
2.3.2 CVD鑽石反應機制 25
2.3.2 微晶鑽石膜之成核與成長 28
第三章 研究方法與實驗步驟 33
3.1實驗流程 33
3.2實驗設備 33
3.3實驗步驟 35
3.4分析儀器簡介 41
3.4.1 場發射掃瞄式電子顯微鏡 41
3.4.2 拉曼光譜分析儀 41
3.4.3 X光繞射儀 41
3.4.4 歐傑電子能譜分析儀 42
3.4.5 X光光電子能譜儀 43
第四章 結果與討論 46
4.1鐘罩式與管狀式反應腔體成長鑽石薄膜之比較 46
4.2微晶鑽石薄膜特性分析 50
4.2.1 X-Ray繞射分析 50
4.2.2 X光光電子能譜分析 50
4.2.3 歐傑電子能譜分析 50
4.3製程參數對鑽石薄膜成長之影響 56
4.3.1 微波功率對薄膜成長之影響 56
4.3.2 甲烷濃度對薄膜成長之影響 57
4.4電漿鞘對鑽石薄膜成長之影響 63
4.4.1 從表面形貌分析電漿鞘對鑽石薄膜成長之影響 63
4.4.2 從Raman光譜分析電漿鞘對鑽石薄膜成長之影響 68
第五章 結論 70
第六章 研究展望 71
參考文獻 72
作者簡介 75
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