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研究生:羅文池
研究生(外文):Wun-Chi Lo
論文名稱:以電漿輔助化學氣相沉積法在聚醚堸基材上研製水/氧氣阻障膜
論文名稱(外文):Water/Oxygen Barrier Coatings on Polyethersulfone Substrates by Plasma-Enhanced Chemical Vapor Deposition
指導教授:武東星
指導教授(外文):Dong-Sing Wuu
學位類別:碩士
校院名稱:國立中興大學
系所名稱:材料工程學研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
中文關鍵詞:聚醚堸基材電漿輔助化學氣相沉積氧化矽氮化矽氧氣透過率水氣透過率
外文關鍵詞:PolyethersulfonePECVDSiOXSiNXOTRWVTR
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傳統顯示器主要是使用玻璃基板,但其不具有耐衝擊性、可撓曲性並有高重量及厚度的缺點,故近年來以塑膠材料作為可撓式有機電激發光元件(FOLED)的基板成為目前發展的趨勢。但是使用塑膠基板作為顯示器的面板首先要解決水氣與氧氣的滲透問題,由於塑膠基板無法有效抵擋水/氧氣的滲透,容易造成內部顯示物質的損害,降低電子在FOLED中之注入進而嚴重影響其性能,為解決這個問題,通常會在塑膠基板上鍍上氣體阻隔層。
本實驗利用電漿輔助化學氣相沉積的方法,於聚醚堸(PES)基材上沉積氧化矽、氮化矽阻障薄膜。在實驗中我們主要陳述沉積參數如氣體流量比、製程壓力、射頻功率、製程溫度、薄膜厚度等對阻障薄膜品質如沉積速率、折射率、表面粗糙度、蝕刻速率、薄膜組成、微結構、附著力、接觸角、可撓性以及水/氧氣透過率等之影響。目的為研究氧化矽與氮化矽薄膜阻隔水/氧氣的能力,期望將其應用在保護FOLED之水/氧氣阻隔層。
PES披覆氧化矽、氮化矽薄膜後之穿透率可達90 %以上。在最佳的情況下,氧化矽薄膜沉積於PES後之水氣透過率(WVTR)、氧氣透過率(OTR),分別可以從未鍍膜PES試片之 28 g/m2/day、243 cc/m2/day 分別降低到0.1 g/m2/day、0.18 cc/m2/day。氮化矽薄膜沉積於PES後之WVTR、OTR值分別可以降低到0.01 g/m2/day、0.01 cc/m2/day以下。由實驗結果顯示,將阻障膜沈積在PES塑膠基板上,確實可以有效阻隔水/氧氣的滲透。

Traditional flat panel displays were built on the glasses substrate. But they do not have impact-resistance, flexibility and have the high weight and thickness. Recently, using plastic materials substrate becomes a trend in the present development to study the flexible organic light-emitting devices (FOLED). However, the high permeation of water vapors and oxygen through polymer substrate is an important problem in the FOLED applications. Most of the commercial plastic substrates cannot resist the transmission of water vapor, which can easily cause a great damage inside the display and reduces the electron injection in the OLED structure and thereby drastically decreases its performance. To resolve this problem, a gas barrier layer must be developed on the plastic substrate.
In this study, the SiOX and SiNX thin film was deposited on polyethersulfone (PES) plastic substrate by plasma-enhanced chemical vapor deposition (PECVD). Details of the effects of deposition parameters (flow ratio, chamber pressure, and rf power density, temperature, thickness) on the barrier film properties in terms of deposition rate, refractive index, roughness, etch rate, film structure, microstructure, adhesion, contact angle, flexibility, and WVTR/OTR were described, expecting for FOLED application as water/oxygen barrier layer. The transparency of the barrier layer can achieve over 80 % after coating silica and silicon nitride on PES. Under optimum conditions, the WVTR and OTR for PES can be reduced from a level of 28 g/m2/day and 243 cc/m2/day (bare substrate) to 0.1 g/m2/day and 0.18 cc/m2/day after coating silica. The WVTR and OTR for PES can be reduced to 0.01 g/m2-day and 0.01 cc/m2/day after coating silicon nitride. As a result of experiments, the deposition of SiOX and SiNX thin film on PES plastic substrate indeed resists the oxygen and water vapor transmission sufficiently.

目錄
封面內頁
簽名頁
授權書
中文摘要 Ⅰ
英文摘要 Ⅱ
誌謝 Ⅲ
目錄 Ⅳ
表 圖目錄 Ⅸ
第一章 概論 1
1.1 前言 1
1.2 研究動機、背景 2
1.3 文獻回顧與研究方向 4
第二章 實驗基礎理論 6
2.1電漿原理簡介 6
2.1.1電漿之定義 6
2.1.2電漿生成原理 7
2.1.3薄膜沈積機構 9
2.1.4電漿化學氣相沉積法 11
2.2二氧化矽、氮化矽薄膜之結構與特性 12
2.3表面自由能理論 14
2.4水/氧氣滲透理論 14
第三章 實驗方法與步驟 19
3.1實驗流程 19
3.2電漿輔助化學氣相沉積設備 20
3.3電漿輔助化學氣相沉積反應腔設計 21
3.4實驗藥品、材料 22
3.5實驗步驟 23
3.6薄膜特性量測、分析 23
3.6.1 n&k光學量測系統 23
3.6.2 α-step量測系統 24
3.6.3 霍式轉換紅外線光譜 24
3.6.4 光電子分光分析 25
3.6.5 接觸角量測 25
3.6.6 表面粗糙度 26
3.6.7 場發射電子顯微鏡 26
3.6.8 附著力 27
3.6.9 水/氧氣透過率 28
3.6.10 撓曲試驗 32
第四章 沉積SiOx薄膜之實驗結果與討論 33
4.1改變N2O/SiH4之比例 33
4.1.1沈積速率、折射率之探討 33
4.1.2紅外線光譜分析 34
4.1.3附著力、表面粗糙度之探討 34
4.1.4水/氧氣透過率之探討 35
4.2不同製程壓力 35
4.2.1蝕刻速率、沉積速率 35
4.2.2附著力、表面粗糙度 36
4.2.3水/氧氣透過率 36
4.3不同射頻功率 37
4.3.1蝕刻速率、沉積速率 37
4.3.2折射率、穿透率之探討 37
4.3.3水/氧氣透過率之探討 38
4.4不同製程溫度 38
4.4.1附著力、沉積速率 38
4.4.2表面粗糙度、水氣透過率 39
4.4.3折射率、穿透率之探討 39
4.5不同薄膜厚度 39
4.5.1表面粗糙度、水氣透過率 39
4.5.2雙面鍍膜法之探討 40
第五章 沉積SiNx薄膜之實驗結果與討論 62
5.1改變NH3/SiH4之比例 62
5.1.1沈積速率、附著力之探討 62
5.1.2折射率、穿透率之探討 62
5.1.3紅外線光譜分析 63
5.1.4水/氧氣透過率之探討 63
5.2不同製程壓力 64
5.2.1附著力、沉積速率 64
5.2.2折射率、穿透率之探討 64
5.2.3蝕刻速率、表面粗糙度 65
5.2.4水/氧氣透過率 65
5.3不同射頻功率 66
5.3.1附著力、沉積速率 66
5.3.2折射率、穿透率之探討 66
5.3.3蝕刻速率、表面粗糙度 66
5.3.4水/氧氣透過率 67
5.4不同製程溫度 67
5.4.1附著力、沉積速率 67
5.4.2折射率、穿透率之探討 68
5.4.3蝕刻速率、表面粗糙度 68
5.4.4水/氧氣透過率 68
5.5不同薄膜厚度 69
5.5.1水/氧氣透過率 69
5.6氧化矽、氮化矽混合膜之可撓性測試 69
第六章 結論 92
參考資料 94

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