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研究生:莊文彥
研究生(外文):Wen-Yen Chuang
論文名稱:以共沈積法製備ITO透明導電薄膜添加異質金屬之特性研究
指導教授:林天財林天財引用關係李世欽李世欽引用關係
指導教授(外文):Tien-Chai LinShih-Chin Lee
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:117
中文關鍵詞:濺射
外文關鍵詞:sputtering
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  透明導電膜(transparent conducting films)指的是在可見光範圍內具有高穿透性,且良好導電性的薄膜。由於具特別的光學性質及電性,可應用在諸多領域。然而以濺鍍法在製備ITO的程序中往往由於Sn含量之流失,且薄膜粗糙度容易影響元件之特性,所以本實驗研究的方法即以添加異質金屬(包括Sn、Ti及Cr),以共沈積(co-sputter)的方式改變製程參數對ITO透明導電膜做進一步之研究,並做後續之退火處理,以期有更好之特性改善。
  研究結果顯示,添加異質金屬Sn、Ti、Cr在適當功率下,金屬能發揮效應提供額外之電子,薄膜最低電阻率分別為ITO125W添加Sn 之7.5W、Ti之 5W及Cr之 15W,而電阻率分別達6.63×10-4、6.64×10-4及8.64×10-4Ω.cm,而透光率均可達80%。經SEM和AFM表面觀察可知,添加異質金屬Sn、Ti、Cr能抑制表面叢聚物之生成並使表面粗糙度Rrms值下降至1nm以下。
  退火結果顯示,添加金屬Sn在低溫退火時不符合B-M理論,而添加Ti、Cr在250℃退火時金屬發揮效應能提供額外之電子。而在450℃高溫退火後,其載子濃度均上升,薄膜最低電阻率達2.67×10-4Ω.cm,且薄膜之Rrms值均在1.5nm以下,Rp-v值也下降,可見光透光率均上升,最高可達92%。
  ITO film has high properties of transmittance and conductance in the visible range. Because of its special optical and electrical properties, it is used for many applications. The resistivity of ITO film and the content of Sn have deep relationship and the resistivity increased while the content of Sn decreased in deposition process. The other hand, the roughness of ITO film is an important factor to optical-electrical devices performance. Therefore, we added different kinds of material (Sn, Ti, Cr) into the ITO film by co-sputtering system with various parameters to investigate properties of these films. In advanced, we also took the post-annealing experiments to expect having outstanding properties.
  Experimental results revealed, when added tin, titanium and chromium with 7.5W, 5W and 15W, respectively, they could supply additional carries for ITO film to decrease resistivity. The minimum resistivity of the films were attained to 6.63×10-4Ω.cm, 6.64×10-4Ω.cm and 8.64×10-4Ω.cm, respectively, then the transmittance in visible range could also reached 80%. SEM and AFM surface morphologies show that added tin, titanium and chromium could restrain the clusters, the root-mean-square(Rrms) values were below 1nm.
  Post-annealing experiments proved that added tin at low annealing temperature did not fit the B-M theory, then added titanium and chromium at 250℃ could supply a great quantity of carries. The carrier concentrations of the different films were all increased at 450℃, the minimum resistivity of the films reached 2.67×10-4Ω.cm. The root-mean-square values all decreased below 1.5nm, and the peak-to-vale(Rp-v)values also decreased. The transmittance in the visible range after post-annealing is increased, the maximum values attained 92%.
中文摘要…………………………………………………………………I
英文摘要…………………………………………………………………II
總目錄……………………………………………………………………IV
圖目錄…………………………………………………………………VII
表目錄……………………………………………………………………XIII

第一章 緒論……………………………………………………………1
1-1 前言……………………………………………………………1
1-2 研究動機與目的………………………………………………4

第二章 理論基礎與文獻回顧…………………………………………5
2-1 濺鍍原理……………………………………………………………5
2-1-1 電漿原理………………………………………………………5
2-1-2 射頻放電………………………………………………………8
2-1-3 磁控濺鍍法……………………………………………………9
2-2 薄膜成核成長理論…………………………………………………9
2-3 銦錫氧化物(ITO)透明導電膜之性質………………………………12
2-3-1 結構與電性…………………………………………………12
2-3-2 光學性質……………………………………………………13

第三章 實驗方法與步驟………………………………………………17
3-1 實驗流程…………………………………………………………17
3-2 實驗材料…………………………………………………………18
3-3 鍍膜製程…………………………………………………………19
3-3-1 實驗系統說明………………………………………………19
3-3-2 鍍膜參數及步驟……………………………………………22
3-3-3 鍍膜熱處理步驟……………………………………………23
3-4 鍍膜性質分析……………………………………………………23
3-4-1 膜厚與成長速率之量測……………………………………23
3-4-2電性量測……………………………………………………24
3-4-3 結構分析……………………………………………………26
3-4-4表面型態及粗糙度分析……………………………………27
3-4-5 光學性質量測………………………………………………27

第四章 結果與討論……………………………………………………28
4-1 製程參數對透明導電薄膜性質之研究…………………………28
4-1-1 薄膜成長速率之研究………………………………………28
4-1-2 薄膜電性之研究……………………………………………34
4-1-3 薄膜晶體結構之研究………………………………………44
4-1-4 薄膜光學性質之研究………………………………………49
4-1-5 薄膜表面型態之研究………………………………………54
4-2 退火後處理對透明導電薄膜性質影響之研究…………………69
4-2-1 薄膜晶體結構與表面型態之研究…………………………69
4-2-2 薄膜電性與光學性質之研究………………………………91

第五章 結論…………………………………………………………109

參考文獻………………………………………………………………111
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