臺灣博碩士論文加值系統

　　ITO(In-Sn-O系)透明導電膜具有可見光高穿透率及低電阻特性，但是ITO薄膜必須在結晶的狀態下才具有良好的導電能力，所以一般商業化製程皆須經過後續熱處理來增加電性，而退火後的結晶化粗糙表面是影響光電元件效能的一大因素；此外ITO的低化學活性也是製程中需克服的課題。為了解決這些當前的問題，除了在製程上的改善之外，新材料的開發也是目前學者所爭相探討的領域。當中又以IZO(In-Zn-O系)薄膜最具有潛力，IZO膜不但具有比ITO膜更優異的高溫穩定性，其非晶質的結構在蝕刻特性上亦具有優勢。
　　本研究即利用雙靶磁控濺鍍配合基板旋轉來共沈積ITO-ZnO複合透明導電膜，並觀察ZnO的導入對薄膜結構、熱穩定性及光電性質之影響，試圖改善ITO薄膜高溫結晶化的問題。結果顯示，不同ZnO添加量之初鍍薄膜皆呈現一微晶質結構，而隨著ZnO的添加，薄膜表面粗糙度隨之降低。此外，薄膜所需的結晶化溫度也隨之提昇，熱處理對表面粗糙度的影響也不顯著，當添加含量到達一定程度時，即使薄膜在500℃高溫下進行熱處理，整體薄膜仍未出現明顯結晶化的現象，電阻率及可見光穿透率亦分別能達到5.2×10-4Ω-cm及80%以上。

　　Transparent and conductive ITO thin film shows low electrical resistance and high transmittance in the visible range of the optical spectrum. In commercial processes, ITO films must be crystallized with post-annealing to obtain good performance in electrical properties, but the crystalline rough surface could affect the efficiency of optoelectronic device. Besides, the low chemical activity of ITO films are also the task must be improved. In order to solve these current problems, all research workers are not only devoted to improve the film deposition processes but also developing new material. In the presence of all, the IZO film is the optimal candidate because of its high temperature stability and amorphous structure.
　　In this thesis, we would co-deposite the ITO-ZnO composite film by dual gun magnetron sputtering system, and observe the film structure, thermal stability and optoelectronic properties. It shows that all the deposited films have amorphous-like structure in all composition, film roughness also decrease with the increase of ZnO content. Besides, the crystalline temperature of films would increase, and the effect of surface roughness after annealing process is not remarkable. When the ZnO content increase continually, the microstructure of the co-sputtered films are improved to an amorphous-like structure even trough a post-annealing treatment up to 500℃, showed the best electrical property of 5.2×10-4Ω-cm, maintaining smooth morphology and fairly high optical transmittance over 80%.

中文摘要………………………………………………………………I
英文摘要………………………………………………………………II
總目錄…………………………………………………………………IV
圖目錄…………………………………………………………………VII
表目錄…………………………………………………………………X

第一章 緒論………………………………………………………1
1-1 透明導電膜…………………………………………1
1-2 研究動機與目的………………………………………5

第二章 理論基礎與文獻回顧………………………………………6
2-1氧化物銦錫(ITO)之介紹………………………………6
2-1氧化鋅(ZnO)之介紹……………………………………7
2-3 In2O3-ZnO系統之介紹…………………………………8
2-4 透明導電薄膜之光學性質…………………………11
2-5濺鍍原理………………………………………………13
2-5-1電漿原理………………………………………14
2-5-2射頻放電………………………………………14
2-5-3磁控濺鍍法……………………………………15
2-6 薄膜成長理論………………………………………19

第三章 實驗方法與流程…………………………………………21
3-1 濺鍍系統裝置………………………………………22
3-2 實驗材料……………………………………………22
3-3 鍍膜程序及參數設定………………………………24
3-4 退火處理……………………………………………25
3-5 薄膜性質量測………………………………………25
3-5-1 膜厚與成長速率之量測……………………25
3-5-2 結構分析……………………………………25
3-5-3 鍍膜微結構分析……………………………26
3-5-4 表面型態及粗糙度分析……………………26
3-5-5 電性量測……………………………………27
3-5-6 光學量測……………………………………31
3-5-7 蝕刻速率量測………………………………31

第四章 結果與討論………………………………………………32
4-1 薄膜成長特性及成份分析…………………………32
4-1-1薄膜成長速率探討……………………………32
4-1-2薄膜縱深成分分析……………………………34
4-2 薄膜結構性質探討…………………………………36
4-2-1 XRD結構分析………………………………36
4-2-2薄膜微結構分析………………………………46
4-3 薄膜表面型態探討…………………………………51
4-3-1薄膜之SEM表面型態………………………51
4-3-2 AFM表面粗糙度……………………………57
4-4 薄膜電學性質………………………………………67
4-4-1不同組成對電阻的影響……………………68
4-4-2 氫氣對薄膜電性之影響……………………72
4-4-3 熱處理對薄膜電性之影響…………………76
4-5 薄膜光學性質………………………………………82
4-5-1不同組成對光學性質的影響…………………83
4-5-2氫氣對不同組成薄膜光學性質之影響………88
4-5-3熱處理對薄膜光學性質之影響………………91
4-6 薄膜蝕刻速率………………………………………97

第五章 結論………………………………………………………100

參考文獻………………………………………………………………102

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