[1] W. Shockley, “Electrons and Holes in Semiconductors”, Van Nostrand,
Princeton, 1950.
[2] C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier generation and
recombination in p-n-junctions and p-n-junction characteristics,” Proc.
IRE, Vol. 45, p. 1228, 1957.
[3] H. Norde, “A modified forward I-V plot for Schottky diodes with high
series resistance”, J. App. Phys. Vol. 50, NO. 7, pp. 5052-5053, 1979.
[4] K. Sato and Y. Yasumura, “Study of forward I-V plot for Schottky
diodes with high series resistance”, J. App. Phys. Vol. 58, NO. 9, pp.
3655-3657, 1985.
[5] T. C. Lee, S. Fung, C. D. Beling, and H. L. Au, “A systematic
approach to the measurement of ideality factor, series resistance, and
barrier height for Schottky diodes”, J. App. Phys. Vol. 72, NO. 10, pp.
4739-4742, 1992.
[6] T. Ishida and H. Ikoma, “Bias dependence of Schottky barrier height
in GaAs from internal photoemission and current-voltage
characteristics”, J. App. Phys. Vol. 74, NO. 6, pp. 3977-3982, 1993.
[7] K. Maeda, H. Ikoma, K. Sato, and T. Ishida, “Current-voltage
characteristics and interface state density of GaAs Schottky barrier”,
Appl. Phys. Lett. Vol. 62, pp. 2560-2562, 1993.
[8] V. Aubry and F. Meyer, “Schottky diodes with high series resistance:
Limitations of forward I-V methods”, J. App. Phys. Vol. 76, NO. 12,
pp. 7973-7984, 1994.
[9] D.D. Damljanovic, “Remodeling the p-n junction”, Circuits and
Devices Magazine, IEEE , Vol. 9 , Issue: 6 , Pages:35 – 37, Nov.
1993.
[10] M. Lyakas, R. Zaharia, and M. Eizenberg, ” Analysis of nonideal
Schottky and p-n junction diodes—Extraction of parameters from I–V
plots”, J. App. Phys. Vol. 78, NO. 9, pp. 5481-5489, 1995.
[11] Y. B. Acharya, and P.D. Vyavahare.; ” Remodeling light emitting
diode in low current region”, Electron Devices, IEEE Transactions
on , Vol. 45 , Issue: 7 , pp. 1426 – 1430, 1998.
[12] V. Mikhelashvili, G. Eisenstein, V. Garber, S. Fainleib, G. Bahir, D.
Ritter, M. Orenstein, and A. Peer, “On the extraction of linear and
nonlinear physical parameters in nonideal diodes”, J. App. Phys. Vol.
85, No. 8, pp. 6873-6883, 1999.
[13] C. Cane, M. Lozano, I. Gracia, J. Santander, E. Lora-Tamayo, ”
An easy technique for determining diffusion and
generation-recombination components of the current of pn junctions
for better modelling”, Microelectronic Test Structures, 1993. ICMTS
1993. Proceedings of the 1993 International Conference on , 22-25 ,
Pages:167 – 170, 1993.
[14] D. A. Neamen, “Semiconductor Physics & Devices”, Second
Edition, McGraw-Hill, 1999.
[15] S. M. Sze, “Semiconductor Devices Physics and Technology”, 2/H’,
John Wiley & Sons, 2002.
[16] S. O. Kasap, “Optoelectronics and Photonics Principles and
Practices”, Prentice Hall, 2001.
[17] E. Fred Schubert, “Light-Emitting Diodes”, the Nuited Kingdom at
the University Press, 2003.
[18] 彭江得, ”光電子技術基礎”, 儒林圖書有限公司, 1993.
[19] M. Fukuda, “Optical Semiconductor Devices”, NTT
Opto-electronics Laboratories Kanagawa, Japan, 1999.
[20] 工業技術研究院產業經濟與資訊服務中心,”2000 光電工業綜
論”,2000.
[21] 陳中豪, 蔣培瑜, “光源色度量測原理”, 工業材料雜誌, 208 期,2004.
[22] A. S. Grove, “Physics and Technology of Semiconductor Devices”,
New York, Wiley, p.p. 187. 1967.
[23] H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada,
“Dominance of tunneling current and band filling in InGaN/AlGaN
double heterostructure blue light-emitting diodes”, Appl. Phys. Lett.,
Vol. 68, pp. 2867-2869, 1996.
[24] I. Mártil, E. Redondo, and A. Ojeda, “Influence of defects on the
electrical and optical characteristics of blue light-emitting diodes
based on III–V nitrides”, J. Appl. Phys., Vol. 81, pp. 2442-2444, 1997.
[25] X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer,
and D. Walker, “Diffusion and tunneling currents in GaN/InGaN
multiple quantum well light-emitting diodes”, Electron Device Letters,
IEEE , Volume: 23 , Issue: 9 , Sept., Pages:535 – 537, 2002.
[26] S. Nakamura, T. Mukai, and M. Senoh, “High-brightness
InGaN/AlGaN double-heterostructure blue-green-light-emitting
diodes”, J. Appl. Phys. Vol. 76, pp. 8189-8191, 1994.
[27] S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald,
“High dislocation densities in high efficiency GaN-based
light-emitting diodes”, Appl. Phys. Lett. Vol. 66, pp. 1249-1251,
1995.
[28] P. Perlin, M. Osi ski, P. G. Eliseev, V. A. Smagley, J. Mu, M. Banas,
and P. Sartori, “Low-temperature study of current and
electroluminescence in InGaN/AlGaN/GaN double-heterostructure
blue light-emitting diodes”, Appl. Phys. Lett., Vol. 69, pp. 1680-1682,
1996.
[29] H. C. Casey JR. , Donald J. Silversmith, “Radiative tunneling in
GaAs Abrupt Asymmetrical Junctions”, J. Appl. Phys. Vol. 40, 1969.
[30] L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, and J.
Redwing, ”The role of the tunneling component in the
current--voltage characteristics of metal-GaN Schottky diodes”, Appl.
Phys., Vol. 84, pp. 2099, 1998.
[31] H. C. Casey Jr. , R. Z. Bachrach, “Electroluminescent shifting-peak
spextra in GaAs with uniform excition”, J. Appl. Phys. Vol. 44, No. 6,
1973.
[32] O. Langerstedt, B. Monemar, and H.Gislason, “Properties of GaN
tunneling MIS light-emitting diodes”, J. Appl. Phys. Vol. 49, pp.2953
1978.
[33] A. Shintani and S. Minagawa, “Electric properties of GaN
light-emitting diodes”, J. Appl. Phys. Vol.48 , pp.1522, 1977.
[34] E. Pinkas, B. I. Miller, I. Hayashi, and P. W. Foy, “GaAs-AlXGa1-XAs
Double Heterostructure Laser-Effectof Doping on Lasing
Characteristics of GaAs”, J. Appl. Phys. Vol. 43, pp. 2827, 1972.
[35] G. B. Stringfellow, M. G. Craford, “High Brightness Light Emitting
Diodes”, Academic press, 1997.
[35] B. I. Miller, E. Pinkas, I. Hayashi, R. J. Capik, “Reproducible
Liquid-Phase-Epitaxial Growth of Double Heterostructure
GaAs-AlXGa1-XAs Laser Diodes”, J. Appl. Phys.Vol. 43,
pp.2817-2826, 1972.
[37] J. F. Womac, and R. H. Rediker, “The Graded-Gap
AlXGa1-XAs-GaAs Heterojunction”, Vol. 43, J. Appl. Phys.
pp.4129-4133, 1972.
[38] H. Kressel, J. V. Dunse, H. Nelson, and F. Z.
Hawrylo, ”Luminescence in silicon-Doped GaAs Grown by
Liquid-Phase Epitaxy”, J. Appl. Phys. Vol. 39, pp. 2006, 1968.
[39] N. E. Byer, “Electroluminescence in Amphoteric silicon-Doped
GaAs Diodes. Ll. Transient Response”, J. Appl. Phys. Pp. 1602-1607,
1970.
[40] K. L. Ashley, and Doerberk, “Investigation of Gallium Arsenide
Emission Diode Characteristics with Transistor Structures”, J. Appl.
Phys. Vol. 42, pp.4493-4499, 1971.
[41] M. llegems, R. Dingle, and R. A. Logan, “Luminescence of Zn- and
Cd-doped GaN”, J. Appl. Phys. Vol.43, pp. 3797-3800, 1972.