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研究生:蔡馨婷
研究生(外文):Hsin-Ting Tasi
論文名稱:氮化鎵奈米結構物和MSM光檢測器的製作
論文名稱(外文):Fabrication of GaN-based nanostructures and MSM photodetectors
指導教授:蘇炎坤蘇炎坤引用關係蔡宗祐蔡宗祐引用關係
指導教授(外文):Yan-Ku SuTzong-Yow Tasi
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:英文
論文頁數:59
中文關鍵詞:氮化鎵奈米針狀物MSM光檢測器量子點
外文關鍵詞:GaN nanotipMSM photodetectorqunatum dot
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  本論文中利用氯氣以電感耦合電漿蝕刻,氮化鎵的表面利用石英石盤形成的光罩再蝕刻形成奈米柱。 原理是利用石英石盤的SiO2 成份。當氯氣的正離子打到石英石盤上之後形成SiO2+ 離子粉末,沉積在氮化鎵表面上。或 Cl2 打到石英石盤上形成奈米光罩。 可以成長出直徑在10 – 90 nm 高度在200-700 nm 的奈米柱. 這個方法會使氮化鎵奈米柱的表面形成反射性質降低,有助於發光二極體和光檢測器的應用.在第四章, 我們成功的製作出InGaN自組式量子點的光檢測器.發現量子點的結構在 MSM 光檢測器的應用上有發生作用.
量子點的PL強度比沒有量子點的PL強度還強過180倍,可見沒有量子點的結構的電子容易被缺陷補捉住無法產生電子電洞對,而量子點的結構比較沒有缺陷的捕捉,表面積增大,使得產生電子電洞對的機率增加,而且量子點具有侷限效用,可以侷限住電子電洞對。所以具有量子點的光檢測器產生較大的光電流。具有較大的光電流和暗電流的比。在5V的偏壓下,具有量子點結構的光暗電流比為220,而沒有量子點結構的只有3.4。
  In the thesis, we form the self-organized GaN nanotips by ICP system which is making use of quartz to form nanomask on GaN sample. The theory is making use of SiO2 of the quartz. The quartz plate is sputtered by Cl+ ions accelerated by cathode bias voltages of -370V to -570V, and then neutral and ionized SiO2 particles are generated. Low-energy SiO2 within the scattered SiO2 particles from the quartz is easily ionized by electron and ion impact in the plasma because of its low speed which has long residence time in the plasma. The diameter of the GaN nanotips is 10-90 nm and the height of the GaN nanotips is 200-700 nm. The excellent antireflection properties of the self-organized GaN nanotips play an important role in improvement of light-emitting and photo-detection devices. Furthermore, we fabricate the self-assembled InGaN quantum dots MSM photodetector. We found the PL intensity of the sample with InGaN quantum dot is about 180 times the normalized PL intensity of the sample without InGaN quantum dots. The sample without InGaN self-assembled quantum dot has the defects which capture electrons in them easily. However, the sample with InGaN quantum dots has larger surface area and without defects to born more electron-hole pairs. The quantum dots have confirmed effect to confirmed electrons. The MSM photodetector with nanostructures has larger photocurrent in the same bias voltage.
Abstract (Chinese)-------------------------------------------------I
Abstract (English)-------------------------------------------------II
Contents ----------------------------------------------------------III
Figure Captions ---------------------------------------------------VI
Chapter 1 Introduction
1.1 Nanotechonlogy in semiconductor--------------------------------1
1.2 Basic requirements for quantum dots in room
temperature devices -------------------------------------------2
1.3 Organization --------------------------------------------------3
Chapter2 Fundamentals of theory and measurement
Techniques
2.1 Inductively coupled plasma Reactive Ion Etching (ICP-RIE)------7
2.2 Photoluminescence measurement (PL) ----------------------------8
2.3 Atomic Force Microscope (AFM) ---------------------------------9
2.4 Photo-CVD system ----------------------------------------------10
Chapter3 Fabrication of GaN self-assembled nanotips by
ICP
3.1 Introduction --------------------------------------------------19
3.2 Experiment
3.2.1 If SiO2 residuals on nanotips -------------------------------22
3.3 Result and Discussion
3.3.1 Cross-section of nanotips in the SEM ------------------------22
3.3.2 The obverse side of nanotips in the SEM ---------------------23
3.3.3 Changing parameters -----------------------------------------24
3.3.4 Antireflective-properties of the self-assembled GaN
nanotips ----------------------------------------------------24
Chapter4 Fabrication of self-assembled InGaN quantum
dots MSM photodetectors
4.1 Introduction --------------------------------------------------39
4.2 Experiments ---------------------------------------------------41
4.2.1 Fabrication of InGaN QDs MSM photodetectors -----------------44
4.2.2 Fabrication of InGaN QDs Au/Ni/SiO2/InGaNQDs
MIS photodetectors ------------------------------------------44
4.3 Results and Discussions ---------------------------------------45
4.3.1 The self-assembled InGaN QDs MSM photodetectors -------------45
4.3.2 The InGaN QDs Au/Ni/SiO2/InGaNQDs MIS
photodetectors ----------------------------------------------46
4.4 Conclusion ----------------------------------------------------47
Chapter 5 Conclusion and Future work
5.1 Conclusion ----------------------------------------------------58
5.2 Future work ---------------------------------------------------59
Chapter1 References
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