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Reference :
[1]H. R. Wu, Y. W. wang and M.P.Houng,”Liquid Phase Deposited SiO2 on GaN and Its Application to MOSFET”,Thesis For Master of Science, Department of Electrical Engineering, National Cheng Kung University, 2001.
[2]H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns, ”Large-band gap SiC, III-V nitride, and II-VI ZnSe-based Semiconductor device technologies” , J. Appl. Phys., vol. 76 , pp.1363, 1994.
[3]S.T. Sheppard. K. Doverspike, W.L Pribble, S.T Allen. And J. Palmour, ”High power microwave GaN/AlGaN HEMTs on silicon carbide,” IEEE Electron Device Lett.. vol. 20, pp. 161-163, April 1999.
[4]J. I. Pankove, E. A. Miller and J. E. Berkeyheiser, “GaN electroluminescent diodes” , RCA Rev., vol. 32, p.383 , 1971.
[5]S.J.Pearton, GaN AND RELATED MATERIALS,ch. 1. Gordon and Breach Science Publishers.
[6]J. Edmond, H. kong and V. Dmitrieve, “Blue/UV emitters from SiC and its alloys,” List. Phys. Conf. Ser. 137, pp.515, 1994.
[7]S. J. Pearton, F. Ren, A. p. Zang and K.P.Lee, “Fabrication and performance of GaN electronic devices,” Materials Science and Engineering, R30 pp.55, 2000.
[8]Y. Uzawa, Z. Wang, A. Osinsky and B. Komiyama, “Submillimeter wave reponses in NbN/AlN/NbN tunnel junctions,” Appl. Phs. Lett. 66, pp.1992, 1995.
[9]M.A.Kahn,j. N. Kuznia, A.R. Bhattrai and D.T. Olson, “Metal conacts to gallium nitride,” Appl. Phys. Lett., vol. 62, pp.2859, 1993.
[10]T.P.Chow, R. Tyagi,“Wide bandgap compound semiconductors for superior high-voltage unipolar power devices,” IEEE Trans. Electron. Dev. 41, pp.1481, 1994.
[11]Z.Z. Bandic, P. M. Bridger, E.C. Piquette, T. C. McGill, R. P. Vaudo, V. M. Phanse and J. M. Redwing, “High voltage (450 V) GaN schottky rectifiers,” Appl. Phys. Lett. Vol. 74, pp.1266, 1999.
[12]R. Gaska, J.W.Yang, A.Osinsky, Q.chen, M.A.Khan, A. O. Orlov, G.L. Snider and M.S. Shur, “Elecreon transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates, “ Appl. Phys. Lett. Vol. 74, pp.1266, 1999.
[13]P. K. Wang, K. O. Schweitz, T.G. Pribicko and S.E. Mohney Department of Materials Science and Engineering, “Ohmic Contacts to n-type AlGaN and Nitride HEMT Epilayers”.
[14]I. Adessida, A. Mahajan, E. Andideh, M.A.Kahn, D.T. Olson, and J.N. Kuznia, Appl. Phys. Lett. 63, pp. 2777, 1993.
[15]R. J. Shul, G.B.McClellan, S.A. Casalnuovo, D. J. Rieger, Appl. Phys. Lett. 69, pp.1119, 1996.
[16]S. J. Pearton, C. R. Abernathy, F.Ren, J. R. Lothian, J. Vac. Sci. Technol. A11, pp.1772, 1993.
[17]A.T. Ping, I.Adesida, and M. A. Khan, Appl. Phys. Lett. 67, pp.1250,1995.
[18]X. A. Cao et al. , Appl. Phys. Lett. 75, pp. 232, 1999.
[19]Properties, Processesing and Applications of Gallium Nitride and Related Semiconductor, edited by J.H. Edgar, S.T. Strite, I. Akasaki, H.Amano, and C. Wetzel(Inspec, London, 1999). [20]J. R. Mileham, S. J. Perton, C. R. Abern athy, J. C. Mackenzie, R. J. Shul. , J. Vac. Sci. Technol. , Vo;. A14, pp.836-839, 1996.
[21]M. S. Minsky, M. White, E. L. Hu, Appl. Phys. Lett.68(11), pp. 1531-1533, 1996.
[22]C. Youtsey, I. Adesida, and G. Bulman, Appl. Phys. Lett.71, pp.2151, 1997.
[23]C. Youtsey, I. Adesida, L. T. Romano, and G. Bulman, Appl. Phys. Lett. 72, pp.560, 1998.
[24]C. Youtsey, I. Adesida, and G. Bulman, J. Electron. Mater. 27, pp.282, 1998.
[25]C. Youtsey, I. Adesida, and L. T. Romano, Appl. Phys. Lett. 73, pp.797, 1998.
[26]L. H. Peng, C. W. Chang, J. K. Ho, C. N. Huang, and C. Y. Chen, Appl. Phys. Lett. 72, pp.939, 1998.
[27]J. A. Bardwell, I. G. Foulds, J. B. Webb, H. Tang, J. Fraser, S. Moisa, and S. J. Rolfe, J. Electron. Mater, Vol.28, pp.10, 1999.
[28]S. M. Sze, Physucs of Semiconductor Devices, 2nd ed. New York: Wiley, pp. 304-307, 1981.
[29]C. Youtsey, G. Bulman, I. Adesida, J. Electron, Mater, vol. 27, 4, pp282-287, 1998.
[30]C. Youtsey, I. Adesida, Appl.Phys. Lett, vol. 72, num. 5, pp560-562, 1998.
[31]Ren, F., Hong M., Chu, S.N.F., Marcus, M.A., Schurman, M.J., Baca, A., Pearton, S.J., and Abernathy, C.R., “Effect of temperature on Ga2O3(Gd2O3)/GaN metal metal-oxide- semiconductor field-effect transistors,” Appl. Phys. Lett., vol. 73, pp.3893, 1998. [32]M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J.N. Baillargeon, A. R. Kortan., J.P. Mannaerts, A. Y. Cho, C. M. Lee,J. I. Chyi and T.S. Lay, “Properties of Ga2O3(Gd2O3)/GaN metal-insulator- semiconductor diodes”, J. Vac. Sci. Technol. B, 18(3), pp.1453, 2000.
[33]H. C. Casey, G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. Denbaars, “Low interface trap density for remote plasma deposited SiO2 on GaN,” Appl. Phys. Lett. , vol. 68, pp.1850, 1996.
[34]T. Homma, K. Katoh, Y. Yamada, and Y. Murao, “A Selective SiO2 Film-Formation Technology Using LPD for Fully Planarized Multilevel interconnections,” J.Electrochem. Soc., vol. 140, No. 8, pp.2410, 1993.
[35]W. J. Chang, M. P. Houng and and Y. H. Wang, “Investigation on the Conduction Mechanism of Ultrathin Fluorinated Silicon Dioxides,” Dissertation for Doctor of Philosophy, Department of Electrical Engineering, National Cheng Kung University, 2001.
[36]M. P. Houng, C. J. Huang, Y.H. Wang, N. F. Wang and W. J. Chang “Extremely low temperature formation of silicon dioxide on gallium aesenide,” J. Appl. Phys.,vol. 82, pp.5788, 1997.
[37]M. P. Houng, Y. H. Wang, C. J. Huang, S. P. Huang, and J. H. Horng, “Quality optimization of liquid phase deposition SiO2 films on gallium arsenide,” Solid-State Electronics, vol. 44, pp.1917, 2000.
[38]W. S. Lu and J. G. Hwu, “Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process,” IEEE Electron Device Letters, vol. 17 Iss.4, pp. 172, April, 1996.
[39]J. Y. Wu, Y. H. Wang and M. P. Houng, “Investigation and Application of Liquid Phase Chemical Enhanced Oxidation Technique on GaAs MOSFET’s,” Dissertation for Doctor of Philsosphy, Department of Electrical Engineering, National Cheng Kung University, 2001.
[40]S. P. Murarka, “Thermal oxidation of GaAs,” Appl. Phys. Lett., Vol. 26, pp.180, 1975.
[41]D. N. Butcher and B. J. Sealy, “The thermal oxidation of GaAs,” J. Phys. D:Appl. Phys., vol. 11, pp. 1451, 1978.
[42]G. Liu and X. Lin, “Scaling issues of LPD protocol,” Info-tech and Info-net, 2001. Proceedings. ICII 2001 – Beijing. 2001 Inyernational Conferences on, vol.2, pp. 110, 2001.
[43]J. L. Yeh and S. C. Lee, “ Amorphous-silicon thin-film transistor with liquid phase deposition of silicon dioxide gate insulator”, IEEE Electron Device Letters , vol. 20, iss. 3, pp.138, March, 1999.
[44]H. C. Casey, G. G. Fountain, R. G. Alley, B. P. Keller and S. P. Denbaars, “Low interface trap density for remote plasma deposited SiO2 on n-type GaN”, Appl. Phys. Lett., vol 68, iss. 13, pp. 1850, March, 1996.
[45]E. H. Nicollian and J. R. Brews, MOS(Metal Oxide Semiconductor) physics and technology, ch. 2,3,4. New Jersey: Artech House, 1982.
[46]E. H. Nicollian and J. R. Brews, MOS(Metal Oxide Semiconductor) physics and technology, ch. 8. New Jersey: Artech House, 1982.
[47]M. A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang and M. S. shur, “AlGaN/ GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” IEEE Electron Device Letters, vol. 21, no. 2, pp. 63, February, 2000.
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