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研究生:許義忠
研究生(外文):Yi-Zhong Sheu
論文名稱:氮化鎵材料的蝕刻以及金屬接觸之研究
論文名稱(外文):The Study of the Etching and the Metal’s Contact in GaN Material
指導教授:王永和王永和引用關係洪茂峰洪茂峰引用關係
指導教授(外文):Yeong-Her WangMau-Phon Hong
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:96
中文關鍵詞:光輔助化學濕式蝕刻歐姆接觸蕭基接觸
外文關鍵詞:PEC etchingohmic contactschottky contact
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  • 被引用被引用:4
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  在本文中,研究對於p-GaN、n-GaN簡易的光輔助化學濕式蝕刻並做了一系列的比較。和以往PEC蝕刻不同的是我們採用K2S2O8去取代傳統的白金電極。我們改變了KOH以及H3PO4的PH值對於n-GaN的蝕刻速率,並且在使用Xenon lamp的情形下,在不同光強度下,試試在PH數為多少時有最大的蝕刻速率,再來也嘗試著是否可以使用光輔助化學濕式蝕刻來蝕刻p-GaN。之後研究關於p-GaN的金屬接觸,並利用此光輔助化學蝕刻方式來做p-GaN金屬傳輸線量測(TLM)的平台(mesa),在改變不同的狀況下,我做歐姆接觸的研究,嘗試得到最好的歐姆接觸條件,也就是比較小的比接觸阻抗。最後再研製蕭基二極體,並且研究它的電性,我也使用蝕刻的方法去改變表面載子濃度,去比較有蝕刻跟未蝕刻的電性差別。
  In this dissertation, we study of a simple photo enhanced etching about p-GaN and n-GaN and do a series contrast. Instead of Pt electrode in past PEC etching, we used oxidizing agent K2S2O8. We used KOH and H3PO4 solutions varied different PH value to etch n-GaN. Under using Xenon lamp situation, I change the lamp intensity in order to get maximum etching in different PH value, and then we try to etch p-GaN and to see the possibility. After that, I study of the metal’s contact about p-GaN, and use PEC etching to make the mesa of metal contact on p-GaN. I change many conditions to get better ohmic contact and low characteristic contact resistance. At last, produce the schottky diode and study the electric property. And then I used PEC method to etch the p-GaN’s surface for getting the different change with unetching layer.
英文摘要......................................Ⅰ
中文摘要......................................Ⅲ
目 錄.........................................Ⅴ
表 目 錄......................................Ⅷ
圖 目 錄......................................Ⅸ
目錄
第一章 序論...................................1
1.1 氮化鎵材料的簡介..........................1-2
1.2 氮化鎵材料的研究背景......................2-3
1.3 論文概序..................................3-4
第二章 光輔助化學濕式蝕刻.....................5
2.1 光輔助化學濕式蝕刻簡介....................5-7
2.2 光輔助化學濕式蝕刻原理....................7-9
2.3 高度非等向性蝕刻..........................9
2.4 擴散限制過程..............................9-11
2.5 光輔助化學濕式蝕刻實驗流程................11-14
第三章 p型氮化鎵的金屬接觸研究................15
3.1 前言......................................15
3.2金屬與半導體接觸接面.......................15-16
3.2.1 整流特性的蕭基接觸......................16-17
3.2.2 半導體與金屬的歐姆接觸..................17-18
3.2.3 有位障時的電流傳輸機制..................18-19
3.3 p型氮化鎵歐姆接觸.........................19-20
3.3.1 p型氮化鎵材料歐姆接觸的問題.............20-21
3.3.2 p型氮化鎵材料歐姆接觸解決方法...........21-24
3.4 鎳/金金屬氧化熱處理機制...................24-25
3.5 比接觸電阻傳輸線量測方法..................26-28
3.6 p型氮化鎵歐姆接觸實驗流程.................28
3.7 p型氮化鎵蕭基接觸研究.....................29-30
3.8 p型氮化鎵蕭基接觸實驗流程圖...............30-31
第四章 結果與討論.............................32
4.1 影響蝕刻速率的因素........................32-34
4.2 蝕刻液對於蝕刻的影響......................34-36
4.3 蝕刻缺陷的表面分析........................36-38
4.4 p型以及n型氮化鎵材料的選擇性蝕刻..........38-39
4.5 p型氮化鎵活化對歐姆接觸的影響.............39-41
4.6 表面處理對於p型氮化鎵歐姆接觸的影響.......41-42
4.7 金屬電極對於p型氮化鎵歐姆接觸的影響.......42-43
4.8 p型氮化鎵材料的蕭基電性探討...............43-44
第五章 結論...................................45-47
附圖
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