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研究生:楊純惠
研究生(外文):Chun-Hui Yang
論文名稱:磷化銦系列光電開關之研究
論文名稱(外文):Study of InP-based Optoelectronic Switching Device
指導教授:王永和王永和引用關係洪茂峰洪茂峰引用關係
指導教授(外文):Yung-Her WangMan-Phun Hong
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:英文
論文頁數:71
中文關鍵詞:光電開關
外文關鍵詞:switch
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  此文主要是探討長波長InP系列之光電開關的研製與分析。在結構中,將由InGaAs/InGaAsP所形成的多重量子井結構合併在p-n-p-n元件裡,以製成長波長光光電開關。首先以不同結構之元件,來比較開關元件之電流-電壓特性,以明瞭摻雜濃度對電流電壓特性曲線的影響,並且製作兩端元件,探討在不同功率的光注入和溫度變化對元件之影響,在三端的部分,以不同閘極輸入的方式去了解驅動的機制,並將實驗結果作比較,探討在閘極輸入正負電壓、電流控制效率的影響,最後,對光輸出的部分作頻譜的量測,以及在不同輸入電流下對峰值波長和輸出功率的影響。
  The purpose of this paper is to analyze and fabricate the optoelectronic switch of long wavelength based on InP materials systems. We combine p-n-p-n device with multi-quantum well InGaAs/InGaAsP to promote emission efficiency. At first, we compare the current-voltage characteristic of different device to realize the influence of doping concentration on switching voltage. In the two-terminal p-n-p-n device, we discuss the influence of current-voltage characteristic under different light injection and temperature. According to the result of the experiment, we compare the current- and voltage-controlled efficiencies in the section of three-terminal device. Finally, we measure the light output of device with the peak wavelength and discuss the effect of peak and output power at different injection current.
Abstract...............................................................1
List of Table..........................................................4
List of Figure.........................................................5

Chapter1 Introduction..................................................8

Chapter2 Theoretical Analyses..........................................10
2.1 I-V Characteristic of P-N-P-N Device...............................10
2.1.1 Forward Region.............................................11
2.1.2 Reverse Region.............................................14
2.2 Theory of Multi-quantum Well.......................................15

Chapter3 Characteristics of the Two-Terminal p-n-p-n Device............28
3.1 Structure of Device and Fabrication................................28
3.2 Current-Voltage Characteristics and Improvement of Device..........30
3.3 The Influence of Temperature in Device.............................31
3.4 The Influence of Light Injection...................................32
3.5 Light Emitting Devices.............................................32

Chapter4 Three Terminal Devices........................................46
4.1 The Device Fabrication of Three Terminals..........................46
4.2 The Gate Control of Device.........................................46
4.2.1 The Current Control of Device....................................47
4.2.2 The Voltage Control of Device………………………………………………48
4.3 The Compare of Gate Control Efficiency.............................49
4.4 The Influence of Various Gate Positions on Device Performance .....49

Chapter5 Conclusion....................................................66
References.............................................................68
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