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研究生:黃百鉉
研究生(外文):Pai-Hsuan Huang
論文名稱:八吋PECVD腔體中環狀導管的幾何形狀對薄膜沉積均一性影響之研究
論文名稱(外文):Geometrical Effects of the Ring Duct on the Uniformity of Thin —film Deposition in a 8〞-PECVD Chamber
指導教授:吳 宗 信
指導教授(外文):chong-sin Wu
學位類別:碩士
校院名稱:國立交通大學
系所名稱:精密與自動化工程學程碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:92
語文別:英文
論文頁數:75
中文關鍵詞:八吋PECVD腔體中環狀導管的幾何形狀對薄膜沉積均一性影響之研究
外文關鍵詞:Geometrical Effects of the Ring Duct on the Uniformity of Thin —film Deposition in a 8〞-PECVD Chamber
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摘要
本研究是針對八吋PECVD腔體中環狀導管的幾何形狀對薄膜沉積均一性影響方面之探討,我們用歪斜的槽孔之環狀導管來產生漩渦以帶動氣體流動, 和薄膜沈積進一步的改善均勻性。結果表示我們並沒有所有的製程都成功,它告訴了我們薄膜均勻度,不僅取決於環狀導管中的幾何學,而且氣體的特性也會影響。
在超大積體電路在一年又一年往更小的製程前進,線徑變窄,及產能擴張,如何使生產創造一個高效率,高產能輸出,為製造商增加良率以獲得產能縮短時程,是我們必須要去做的一些研究。
ABSTRACT
In this study is presented the Geometrical Effects of the Ring Duct on the Uniformity of Thin —film Deposition in a 8〞-PECVD Chamber, we used the skewed slots of ring duct to produce swirl to bring gas flow, and improving uniformity of thin film deposition further. The results showed that we did not successful all of process, the significance showed us the domination of uniformity of thin film not only depends on geometry in the ring duct, but gas characteristics also will affect.
The VLSI made progress toward more small process year by year, more integrated circuit degree gain biggest the quantity of output, the metal line forward more narrow, e.g... How to create a high efficiency of production, a high quantity of output, which results in increased device yields for manufacturers? That is way we have to go to do some of research.
TABLE OF CONTENTS
ABSTRACT····························································································i
ACKNOWLEDGMENTS···································································· ii
TABLE OF CONTENTS··································································iii
LIST OF TABLES··························································································v
LIST OF FIGURES················································································vi
LIST OF APPENDANTS················································································viii
NOMENCLATURE················································································ix
CHAPTER
I. INTRODUCTION························································1
1.1 General Statement of the Problem
1.2 Previous Related Studies
1.3 Specific Objectives of this Study
II. EXPERIMENTAL METHODS ························································5
2.1 Test Apparatus
2.1.1 General Descriptions
2.1.2 Description of Component Functions
2.2 Instrumentation
2.3 Summary of Test Conditions
III. THEORY························································13
3.1 Plasma Aspect
3.1.1 Nature of Plasma
3.1.2 Deposition Mechanism
3.1.3 Effects of Operating Parameters
3.2 Hydrodynamic Aspect
3.2.1 Reynolds Number
3.2.2 Mean Free Path
3.2.3 Residence Time
3.3 Thermal Energy Aspect
3.4 CVD (Chemical Vapor Deposition) Aspect
IV. RESULTS AND DISCUSSION·······················································24
4.1 Geometrical effects of the Ring Duct on TEOS 5K process
4.2 Geometrical effects of the Ring Duct on Cu_SIN500 process
4.3 Geometrical effects of the Ring Duct on SION250 process
4.4 Effects of different gap on SION250 process
4.5 Three kind of process recipe used Modification model A by 14 mm Gap
4.6 Geometrical effects of the Ring Duct to do the Reliability test on SION 250 by 14 mm gap
V. SUMMARY AND CONCLUSIONS········································26
5.1 Summary
5.2 Conclusions
5.3 Recommendations for further research
APPENDIX A····································································70
APPENDIX B····································································71
REFERENCES···························································72
AUTOBIOGRAPHY························································73
REFERENCES
[1] A.N.R. da Silva and N.I. Morimoto, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology, Nanotech 2002 Vol. 2, P. 360-363 (2002)
[2] Michael A. Lieberman, Allan J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, John Wiley & Sons, Inc., P. 514-515 (1994)
[3] Krishna Seshan, Handbook of Thin Film Deposition Processes and Techniques, William Andrew Publishing, P. 112-124, 138-140 (2001).
[4] A.S.M. Japan K.K., System Documentation Drawing Package, 1/4 (2002)
[5] Hong Xiao 著, 羅正忠, 張鼎張 譯, Introduction to Semiconductor Manufacturing Technology, Pearson Education Taiwan, P. 376-378 (2002)
[6] 張俊彥, 鄭晃忠, 積體電路製程及設備技術手冊, 產業科技發展協會, P. 201-203 (1998)
[7] 前田和夫, VLSIとCVD 半導體テハイスへのCVD技術の應用, 楨書店, P. 31 (1997)
[8] 裘性天, http://chiuserv.ac.nctu.edu.tw/~htchiu/cvd/home.html, Department of Applied Chemistry, National Chiao Tung University (1998)
[9] 楊建裕, 流體機械, 高立圖書有限公司, P. 68-74 (1990)
[10] Chapman, Brian N, Glow Discharge Processes, John Wiley & Sons, Inc., P. 9-16 (1980)
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