臺灣博碩士論文加值系統

在本論文中，首先建立HBT元件VBIC模型開始，利用各種不同的量測方式，萃取交直流參數，進而建立溫度參數模型，並且加入高頻雜訊模型使其元件模型更完整，透過負載拉移系統，驗證元件模型的微波功率、交叉調變與鄰近通道增益比的線性度、變溫環境下功率及高頻雜訊特性。
接著將HBT元件設計應用於802.11a頻段為5.8GHz兩種功率放大器，分別對線性度與溫度作補償。利用兩種主動偏壓方式，使得放大器具有較好的線性度與對環境溫度變化增益變動的抑制。為了考慮封裝的需要，在電路設計時，先考量ESD保護電路及封裝效應的高頻特性。最後在成功完成兩電路的QFN封裝量測後，利用高頻電磁場模擬軟體HFSS與lumped-element元件建立封裝模型，並加以驗證。

In this thesis, the HBT device VBIC model established first of all used different measurement methods to extract DC and AC parameters. And then establish temperature model parameters and high frequency noise model to complete device model. and the model used load pull system to verify microwave power、intermodulation、adjacent channel power rate、different environment temperature power character.
Two types power amplifier for 802.11a is designed and compensate PA for linearity and temperature. The PA used different active bias circuit individually to improve linearity and restrain power gain variation when environment temperature changed. The power amplifiers consider package assembly effect. So the circuit design include ESD prevent component.
The package model establish used HFSS simulator and lumped element components in the end.

第一章導論
§1-1 研究動機
§1-2 論文綱要
第二章VBIC模型建立
§2-1簡介
§2-2 VBIC模型建立
§2-2-1 VBIC模型介紹
§2-2-2 直流參數分析
§2-2-3寄生電阻之量測及萃取
§2-2-3-1射極與集極寄生電阻
§2-2-3-2基極寄生電阻
§2-2-4 Gummel plot量測及萃取
§2-2-4-1 順向Gummel plot量測及萃取
§2-2-4-2 逆向Gummel plot量測及萃取
§2-2-5 射極電流特性與電流增益β量測與直流參數萃取
§2-2-6 接面電容量測及萃取
§2-2-7傳輸時間參數粹取分析
§2-2-8交流參數粹取分析
§2-2-9溫度參數粹取分析
§2-2-10 VBIC大信號參數及其物理意義
§2-3 VBIC大信號模型驗證
§2-3-1微波功率特性驗證分析
§2-3-1-1 5.2GHz微波功率特性驗證
§2-3-1-2 微波功率特性分析
§2-3-2交叉調變線性度驗證分析
§2-3-3鄰近通道功率比線性度驗證分析
§2-3-4 不同環境溫度下功率特性驗證分析
§2-3-5 高頻雜訊模型建立
§2-4結果討論

第三章 溫度補償微波功率放大器設計
§3-1功率放大器設計原理簡介
§3-2溫度補償機制原理及模擬
§3-3兩級功率放大器設計模擬結果
§3-3-1小信號及大信號模擬
§3-3-1-1 功率級小信號及大信號模擬
§3-3-1-2 驅動級小信號及大信號模擬
§3-3-1-3 級間匹配
§3-3-1-4穩定度模擬分析
§3-3-1-5 兩級放大器小信號及大信號模擬
§3-3-2變溫模擬分析
§3-3-3交叉調變線性度模擬分析
§3-3-4 ESD電路設計與封裝模擬
§3-3-5電路佈局
§3-4量測結果
§3-5結果討論

第四章 線性補償功率放大器設計
§4-1線性補償機制原理及模擬
§4-2兩級功率放大器設計模擬結果
§4-2-1小信號及大信號模擬
§4-2-2線性度模擬分析
§4-2-2-1 交叉調變線性度模擬
§4-2-2-2鄰近通道功率比線性度模擬
§4-2-3ESD電路設計與封裝模擬
§4-2-4電路佈局
§4-3量測結果
§4-4結果討論
第五章 電路封裝量測及模型建立
§5-1 QFN封裝簡介
§5-2 PCB de-embedding方法及量測結果
§5-2-1 PCB de-embedding方法介紹
§5-2-2 5.8GHz線性微波放大器封裝量測結果
§5-2-3 5.8GHz溫度補償微波放大器封裝量測結果
§5-3 封裝模型建立及驗證
§5-4 結果討論
第六章 結論
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