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研究生:吳勁昌
研究生(外文):Jing-Chung Wu
論文名稱:空乏型暨增強型MetamorphicHEMT之製作與研究
論文名稱(外文):Fabrication of Depletion & Enhancement mode Metamorphic HEMT
指導教授:詹益仁詹益仁引用關係
指導教授(外文):Yi-Jen Chan
學位類別:碩士
校院名稱:國立中央大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:83
中文關鍵詞:小信號模型元件製程異質接面高速電晶體
外文關鍵詞:Metamorphic HEMTDevice Processsmall signal parameter
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本論文首先介紹metamorphic HEMT在不同銦含量(In content 30%~60%)的磊晶結構。我們在銦含量為30%的功率型mHEMT的磊晶結構中加入了如pHEMT般的假性通道以增加其電流密度,期望能有更加的功率特性。此外我們在銦含量為50%及60%的高速型mHEMT中再以不同的閘極金屬製作出空乏型(Ti/Pt/Au)以及增強型(Pt/Ti/Pt/Au)的電晶體。利用Pt/Ti/Pt/Au閘極在高溫製程之中會擴散到其蕭特基層的特性,控制閘極金屬到通道層的距離以達到增加門檻電壓的效果,進而實現增強型電晶體的目標。再以本實驗室的量測系統分析各種電晶體在直流、高頻以及功率特性的差異。並由直流量測資料計算出Pt/Ti/Pt/Au閘極的擴散深度,由高頻量測資料分析出電子在增強型以及空乏型電晶體中各個部位的延遲時間以及粹取出兩種電晶體的小訊號參數。藉此來比較此兩種型態的電晶體在高頻特性中的影響。
This paper introduces the metamorphic HEMT in different Indium content. We add the pseudomorphic channel like pHEMT in order to increase the current density and the power performance. Besides that, we try to fabricate the depletion & enhancement mode device using different gate metal in the In=50% & 60% mHEMT samples. We use the Pt diffusion to decrease the distance between the gate metal and channel and enhance the device threshold voltage to reach the enhancement mode device purpose.And we use the measurement system in our lab to measure the difference of DC, RF, Power characteristics. By the measurement data we calculate the diffusion depth of Pt gate and using the RF data to extract the small signal model elements and the electron transient time to analyse the performance difference between depletion and enhancement mode device.
第一章 導論
1-1 研究動機
1-2 論文架構
第二章 InAlAs/InGaAs mHEMT 在GaAs基板上結構與製程
2-1 metamorphic HEMT介紹2-2 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.3;0.45) 磊晶結構介紹
2-3 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.5;0.6) 磊晶結構介紹
2-4 元件製作流程
第三章 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.3;0.45)製作與量測結果
3-1功率型mHEMT直流量測結果
3-2 功率型mHEMT高頻量測結果
3-3 功率型mHEMT功率量測結果
3-4 元件Kink Effect與游離撞擊
3-5 總結
第四章 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.5;0.6)製作與量測結果
4-1 空乏型mHEMT量測與分析
4-2 增強型mHEMT製作與量測分析
4-3高速mHEMT功率量測結果與比較
4-4小信號參數粹取與分析
4-5 延遲時間分析
4-6 總結
第五章 結論
參考文獻
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