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研究生:李俊賢
研究生(外文):Jun-Xian Lee
論文名稱:CuInSe2:Sb薄膜太陽能電池之研製
論文名稱(外文):Fabrication of CuInSe2:Sb Thin Film Solar Cell
指導教授:曾百亨曾百亨引用關係
指導教授(外文):Bae-Heng Tseng
學位類別:碩士
校院名稱:國立中山大學
系所名稱:材料科學研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:60
中文關鍵詞:二硒化銅銦薄膜太陽能電池
外文關鍵詞:solar cellCuInSe2
相關次數:
  • 被引用被引用:12
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本論文是以成長Al/ZnO:Al/CdS/CuInSe2/Mo/SLG結構的太陽能電池,主吸收層 CuInSe2在分子束蒸鍍系統中成長,Al、ZnO:Al、Mo層在真空磁控濺鍍系統中成長,CdS使用化學槽水域法來成長;另外在CuInSe2中摻入Sb來改變表面形貌,藉此來提高太陽能電池元件的轉換效率。目前本實驗室已成功作出有轉換效率的CdS/CuInSe2太陽能電池,以50瓦的鹵素燈光源下,量測元件的開路電壓Voc=0.32 V,短路電流Isc=1.62 mA,填充因子F.F.=33 %,接面理想因子h=3.40,空乏區內為複合電流主導,Cu-rich CuInSe2片電阻為ρs=2.4×104 W / □,波音公司的片電阻為37.04 W / □,電性仍不及文獻所提,在CuInSe2的P-N接面,存在過多的缺陷,電子和電洞複合的機率變大,使得光電流變小,因此必須改善CuInSe2薄膜品質,以增進元件效率。
This paper describes an investigation into the fabrication of Al/ZnO:Al/CdS/CuInSe2/Mo/SLG thin-film solar cell. The absorber layer CuInSe2 films deposited by multisource elemental evaporation on Mo-coated soda lime glass at Tss=550℃. Mo back metal contact and the front metal contact of Al were fabricated by magnetron sputtering. The ~800 Å CdS buffer layer on top of the CuInSe2 layer deposited by a chemical bath deposition (CBD) technique. The ZnO:Al window layer was grown by RF sputtering. Furthermore, we add Sb into CuInSe2 films to modify surface and grow smother surface of Cu-rich CuInSe2.
We have fabricated the ZnO/CdS/CuInSe2 thin-film solar cell with efficiency. The open circuit voltage (Voc) is 0.32 V, the short circuit current (Isc) is 1.62 mA and fill factor (F.F.) is 33 % in our device. The junction ideality factor is h=3.40, it’s meant that recombination current is the dominant current. So, it’s essential to improve the quality of absorber layer CuInSe2 films and control the growth condition.
第一章 簡介 1
1.1前言 1
1.2 CuInSe2複晶薄膜性質 2
1.3 Cu(In,Ga)Se2複晶薄膜性質 3
1.4元件設計分析與探討 4
1.4.1元件結構設計 4
1.4.2各層薄膜之特性 6
1.5研究目的 9
第二章 實驗步驟與分析儀器 11
2.1元件製作流程 11
2.2薄膜成長儀器 15
2.2.1分子束蒸鍍系統(MBE) 15
2.2.2真空磁控濺鍍系統(Sputtering) 16
2.3薄膜特性分析方法與儀器 17
2.3.1 X-ray繞射儀 17
2.3.2 掃描式電子顯微鏡(SEM) 17
2.3.3 電子探針分析儀(EPMA) 17
2.3.4 反射光譜儀 18
2.3.5 吸收光譜儀(UV/NIR/VIS) 18
2.3.6 四點探針(Four-point probe) 18
2.3.7 熱探針量測(Hot probe) 19
2.3.8 霍爾量測(Hall measurement) 19
2.3.9 電流-電壓特性曲線量測(I-V measurement) 19
2.3.10 電容-電壓特性曲線量測(C-V measurement) 20
第三章 實驗結果 21
3.1 各層薄膜成長與分析 21
3.1.1 Mo金屬電極之鍍製 21
3.1.2 Al金屬電極之鍍製 21
3.1.3 ZnO:Al 透光抗反射層之鍍製 22
3.1.4 CuInSe2薄膜之鍍製 23
3.1.5 CuInSe2:Sb薄膜之鍍製 24
3.1.6 ZnSe薄膜之鍍製 26
3.2 Cu(In,Ga)Se2薄膜之製作 26
3.3 元件之製作與量測 28
第四章 討論 31
第五章 參考文獻 33
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