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研究生:施瓊詒
研究生(外文):Chiung-Yi Shih
論文名稱:複晶矽薄膜電晶體可靠度與電性分析應用在主動式有機發光二極體面板之研究
論文名稱(外文):Investigation on reliability & electrical analysis of polysilicon thin-film transistor for AMOLED display
指導教授:張鼎張
指導教授(外文):Ting-Chang Chang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:物理學系研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:英文
論文頁數:65
中文關鍵詞:薄膜電晶體電容量測可靠度有機發光二極體
外文關鍵詞:AMOLEDC-V measurementsreliabilityTFT
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在此論文裡,我們深入探討P型通道複晶矽薄膜電晶體的尺寸效應,以及其應用於主動式有機發光二極體面板作為驅動電晶體的可靠度分析。
在本實驗裡,為了能夠仔細的研究尺寸效應與溫度效應,我們量測與比較了多種不同的通道尺寸的元件特性。我們發現通道寬度較短的元件有較好的驅動電流與較小的起始電壓。
另外,在可靠度分析方面,藉由在150℃下,改變不同的閘極電壓與汲極電壓,作1000秒的stress,可以發現不同的電壓條件對元件會造成不同的影響;而後,再經由多種不同的量測方法,例如:作活化能與漏電流之比較、源極與汲極正反接之電性比較、電容-電壓特性等等方法,我們可以清楚的分析不同stress條件所造成的影響。最後,我們對實際量測到的電容-電壓特性圖,提出了一個物理解釋模型。
In this thesis, the dimension effects and reliabilities of the p-channel poly-Si TFTs for AMOLED are successfully characterized.
We have measured and compared the electrical behaviors of devices to study dimension and temperature effects in this experiment. The influences on the narrow channel width effects are also discussed and explained. It is found that the devices with narrow channel width, exhibit promotional turn-on current and smaller threshold voltage. In addition, the stress effects in p-channel poly-silicon thin-film transistors are investigated and characterized with various applied voltages. The stress effects are clearly analyzed by different methods, such as activation energy of leakage current, changing the definition of source and drain for Vg-Id curve, and C-V measurements. Finally, a physical model was proposed to well explain the results we observed.
Chinese Abstract I
English Abstract II
Contents III
Figure Captions V
Chapter1.Introduction 1
1-1. Active Matrix OLED Displays 1
1-2. Overview of Low Temperature Poly-Silicon Thin-Film
Transistor (LTPS TFTs) technology 4
Chapter 2. Fabrication and Characterization 8
2-1. The fabrication process of Poly-Si TFT 8
2-2. Set up instruments for I-V and C-V measurement 9
2-3. Method of Device Parameter Extraction 10
2-3-1. Determination of the threshold voltage 10
2-3-2. Determination of the subthreshold swing 10
2-3-3. Determination of the field-effect mobility 11
2-3-4. Determination of the trap density 12
Chapter 3. Background of poly-TFT 13
3-1. Leakage current of poly Si-TFTs and defects in
poly-Si Film 13
3-2. Influences of grain structure on carrier transport14
3-3. Small Dimensional poly-Si TFTs 17
3-4. Ultra Thin Channel Device 19
Chapter 4. Results & Discussion 20
4-1. Narrow Width effects and Temperature Effects of
P-channel Polysilicon TFTs 20
4-1-1. Experiment 20
4-1-2. Result and discussion 20
4-1-2-1 The narrow width effects 20
4-1-2-2 The temperature effect 22
4-2 Stress Voltage Effects of P-channel Polysilicon
TFTs 23
4-2-1. Experiment 23
4-2-2 Result and discussion 24
Chapter 5. Conclusion 30
References 31
Figures 37
Chapter 1
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Chapter2
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Chapter3
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Chapter4
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[4-6] Wu I-W, Jackson WB, Huang TY, Lewis AG, Chiang A. IEEE trans Electr Dev Lett 1990;4;167.
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