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研究生:黃信雄
研究生(外文):Hsin-Hsiung Huang
論文名稱:以電漿輔助分子束磊晶成長自聚性氮化銦量子點
論文名稱(外文):Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy
指導教授:杜立偉杜立偉引用關係
指導教授(外文):Li-Wei Tu
學位類別:碩士
校院名稱:國立中山大學
系所名稱:物理學系研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:45
中文關鍵詞:氮化銦分子束磊晶電漿輔助量子點
外文關鍵詞:quantum dotsMBEInN
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隨著元件尺寸逐漸走向奈米尺度,量子點結構已經成為下一代製程的一種新方法。本文將討論以分子束磊晶(Molecular beam epitaxy, MBE)方式在藍寶石基板上生長氮化鎵薄膜,並在其上生長氮化銦量子點結構之樣品。在氮化鎵薄膜方面,利用反射式高能電子繞射(Reflection High Energy Electron Diffraction, RHEED)及掃描式電子顯微鏡(Scanning Electron Microscope, SEM)來確定氮化鎵薄膜表面的平整度。並利用此條件在氮化鎵薄膜上生長氮化銦量子點結構,第一系列的樣品控制氮化銦量子點的生長時間,觀測其表面形貌由小到大之變化,第二系列的樣品是利用氮化鎵薄膜做為夾層,成長多層的氮化銦量子點結構。利用高解析度X-光繞射儀(HR-XRD)及RHEED pattern確定在氮化鎵表面可生長氮化銦結構,由原子力顯微鏡(Atomic force microscope, AFM)、RHEED pattern及SEM推測氮化銦量子點結構生長模式為Stranski-Krastanow生長模式。
As the device size getting nanoscale, quantum dot structure had become one kind of new method of semiconductor manufacturing technology. In this thesis, two series of self-assembled InN quantum dots were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN thin film, based on sapphire(0001) substrate. GaN thin films were characterized by the reflection high energy electron diffraction (RHEED) and scanning electron microscope (SEM). Samples with smooth epitaxial GaN thin films were obtained. Then, InN quantum dots were grown on epitaxial GaN thin film. We have prepared two series of samples. According to the results of the high resolution X-ray diffractometer (HR-XRD) and RHEED patterns, InN structure can be successfully grown on the GaN thin film surface. First series contained samples with InN layer with different thickness and changes of surface morphology were found with increase of InN layer thickness. The second series contained samples with multiple InN layers of the same thickness. Results of atomic force microscopy (AFM), RHEED patterns and SEM, show that InN quantum dots were grown as Stranski-Krastanow growth mode.
中文摘要
英文摘要
第一章 前言………………………………………………………… 1
第二章 實驗及理論………………………………………………… 4
2-1 分子束磊晶系統…………………………………………… 4
2-2 基板準備…………………………………………………… 8
2-3 磊晶程序……………………………………………………10
2-4 樣品生長參數………………………………………………10
2-5 量子侷限效應………………………………………………17
第三章 量測儀器及原理介紹………………………………………19
3-1 原子力顯微鏡原理…………………………………………19
3-2 高解析度X光雙晶繞射儀原理 ……………………………21
3-3 反射式高能電子繞射原理…………………………………23
3-4 場發射掃描式電子顯微鏡原理……………………………23
3-5 穿透式電子顯微鏡原理……………………………………25
3-6 電子探針微區分析儀原理…………………………………25
第四章 實驗結果討論………………………………………………27
4-1 反射式高能電子繞射結果…………………………………27
4-2 掃描式電子顯微鏡結果……………………………………28
4-3 X-光繞射分析結果…………………………………………28
4-4 原子力顯微鏡結果…………………………………………29
4-5 電子探針微區分析結果……………………………………30
4-6 能量散佈光譜結果…………………………………………30
第五章 結論…………………………………………………………43
參考資料 ………………………………………………………………44
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【 2】Y. G. Cao, M. H. Xie, Y. Liu, Y. F. Ng, and H. S. Wu,” InN island shape and its dependence on growth condition of molecular-beam epitaxy”, Appl. Phys. Lett., Vol. 83, No. 25, 22 December 2003
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