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研究生:姜彥竹
研究生(外文):Yen-Chu Chiang
論文名稱:化學氣相沉積技術運用於平面顯示器腔體之熱流模擬分析
論文名稱(外文):A numerical study for flow and heat transfer in a rectangular chemical vapor deposition chamber
指導教授:楊儒楊儒引用關係
指導教授(外文):Ru Yang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:機械與機電工程學系研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:73
中文關鍵詞:化學氣相沉積腔體基座
外文關鍵詞:substratePHOENICSCVDchamber
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本文以套裝軟體PHOENICS模擬化學氣相沉積之長方形腔體的熱流場分佈情形,並以探討熱流場均勻度為主軸。本文以基座固定熱通量與固定溫度兩種模式來探討入口區域、入口至基座距離、出口區域、Re值及Pr值等五個變數對腔體內熱流場均勻度的影響。
研究發現,基座邊緣皆會產生較高剪應力及明顯熱傳現象,此現象不利於均勻度,因此,我們建議欲沉積薄膜的玻璃基板應小於基座。在固定基座熱通量中,入口區域過大容易造成基座邊緣剪應力及熱傳現象提昇,入口區域過小容易造成僅入口下方基座有較高剪應力及熱傳現象,皆不利於均勻度。入口至基座距離的變化也有相似情形。
在固定基座溫度中,基座邊緣的熱傳現象更加明顯,對均勻度影響更大。由探討變數中發現入口區域為0.864*0.72、較低的入口至基座距離、較高腔體倍率、較高的Re數及較高的Pr值可有效提昇Nu值均勻度。
A method using CFD code PHOENICS to simulate flow and heat transfer in a rectangular chemical vapor deposition(CVD) chamber. We focus on the uniformity of heat and flow field. Two different kinds of boundary conditions at substrate, uniform wall heat flux and uniform wall temperature, are used to discuss the effects of the region of inlet, the distance from inlet to substrate, the region of outlet, Re number, and Pr number on uniformity of heat and flow field in chamber.
The study finds that high shear stress and high Nu number will happen on the edge of substrate, and they can not improve the heat and flow field uniformity, We suggest that the substrate should be smaller than susceptor. In the case of uniform wall heat flux on substrate, higher shear stress and Nu number on the edge of substrate would result from the condition that the region of inlet is too big. Higher shear stress and Nu number on the region of stagnant point would result from the condition that the region of inlet is too small. Both of them are not good for uniformity. Such kinds of situations also happen in the variable of the distance from inlet to substrate.
In uniform wall temperature on substrate, the condition of much higher Nu number on the edge of substrate is more obvious, which effects uniformity more seriously. The uniformity of Nu number could be improved effectively on the condition of region of inlet is 0.864*0.72, Higher distance from inlet to substrate.
目錄……………………………………………………………………………..I
圖目錄……………...………………………………………………………III
表目錄…………………………………...…………………………………V
論文摘要(中文)……………………………………………………………VI
論文摘要(英文)……………………………………………………………VII
符號說明…………………………………………………………………VIII

第一章 緒論…………………………………………………………………...1
1-1 前言………………………………………………………………...1
1-2 研究目的與方法…………………………………………………..2
1-2-1 研究目的………………………………………………………2
1-2-2 研究方法………………………………………………………3
1-3 文獻回顧……………………………………………………………3
第二章 理論分析……………………………………………………………8
2-1 基本假設………………………………………………………………8
2-2 統御方程式……………………………………………………………8
2-3 無因次化………………………………………………………………10
第三章 數值方法……………………………………………………………15
3-1 簡述……………………………………………………………………15
3-2 差分方程………………………………………………………………16
3-3 SIMPLER運算法則………………………………………………19
第四章 模擬驗證分析……………………………………………………25
4-1 以統計參數分析………………………………………………………25
4-2 初步模擬結果驗證……………………………………………………25
4-3 全尺寸與四分之一對稱的相互比對…………………………………26
4-4 網格驗證………………………………………………………………26
4-5 物理模型………………………………………………………………27
4-6 變動參數………………………………………………………………28
第五章 模擬結果與討論…………………………………………………38
5-1 以固定基座熱通量進行討論…………………………………………38
5-1-1 腔體入口區域大小對熱流場的影響………………………38
5-1-2 入口至基座距離對熱流場的影響…………………………40
5-1-3 腔體出口區域大小對熱流場的影響………………………41
5-1-4 雷諾數對熱流場的影響…………………………………….42
5-1-5 普朗克數對熱流場的影響…………………………………..43
5-1-6 Nu值之曲線回歸……………………………………………..43
5-2 以固定基座溫度進行討論……………………………………………44
5-2-1 腔體入口區域大小對熱流場的影響………………………44
5-2-2 入口至基座距離對熱流場的影響…………………………44
5-2-3 腔體出口區域大小對熱流場的影響………………………45
5-2-4 雷諾數對熱流場的影響…………………………………….45
5-2-5 普朗克數對熱流場的影響…………………………………..46
5-2-6 Nu值之曲線回歸……………………………………………..46
第六章 結論與建議………………………………………………………68
6-1 結論……………………………………………………………………68
6-2 建議與未來展望………………………………………………………69
第七章 參考文獻……………………………………………………………70
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