臺灣博碩士論文加值系統

本文以有數值分析方法針對金屬有機化學氣相法Metal-Organic Chemical Vapor Deposition (MOCVD)製程設備之製程特性進行模擬探討，並以在藍寶石基板上生成氮化鎵 (gallium nitride簡稱GaN)薄膜，作為研究分析的對象，並以承載氣體之進氣及抽氣方式、進氣口處加裝一氮氣整流裝置，從而找尋控制因素並改善沉積氮化鎵薄膜時厚度均勻度各種可能方法。

Using a numerical method to simulate the Metal-Organic
Chemical Vapor Deposition (MOCVD). A study of the GaN films were growth on sapphire substrates, and a new design method which The position of carrier gas inlets and outlets, the gas in inlets by a showerhead reactor, the modified susceptor. The purpose of this research is to maintain deposited GaN film thickness variation range by controlling those parameters which may affect the deposition.

目錄…………………………………………………………………… I
圖目錄…………………………………………………………………Ⅴ
表目錄……………………………………………………………… Ⅵ
論文摘要（中文）……………………………………………………Ⅶ
論文摘要（英文）……………………………………………………Ⅷ
符號說明………………………………………………………………………Ⅹ
第一章 緒論……………………………………………………………1
1.1 研究背景與動機……………………………………………………1
1.2文獻回顧……………………………………………………………2
1.3 研究內容……………………………………………………………4
第二章 理論模式………………………………………………………6
2.1 物理現象……………………………………………………………6
2.1.1薄膜沉積原理 ……………………………………………………6
2.1.2 化學氣相磊晶機制………………………………………………6
2.1.3熱流耦合效應--熱浮力與自然對流效應………………………8
2.1.4熱質傳耦合—擴散熱效應與熱擴散效應………………………9
2.1.5氮化鎵材料之磊晶成長………………………………………………9
2.1.6 氮化鎵(GAN)化學反應………………………………………………11
2.2基本假設………………………………………………………… 12
2.3 統御方程式………………………………………………………12
2.4 化學反應速率……………………………………………………14
2.5 物理模型…………………………………………………………………… 15
2.6 邊界條件…………………………………………………………17
第三章 數值模擬方法……………………………………………… 19
3.1 數值模擬軟體簡介………………………………………………19
3.2 SIMPLE演算法則 …………………………………………………20
3.3 收斂條件…………………………………………………………24
3.4 網格系統…………………………………………………………25
第四章 結果與討論………………………………………………… 26
4.1氮化條件及薄膜成長之參數條件……………………………… 26
4.2參數討論………………………………………………………… 28
4.2.1氮化鎵製程操作參數………………………………………… 28
4.4.2腔體幾何形狀參數…………………………………………… 39
第五章 結論與建議 …………………………………………………56
5.1 結論 …………………………………………………………… 56
5.2 建議 …………………………………………………………… 58
參考文獻 …………………………………………………………… 59
圖目錄

圖1.1 金屬有機化學氣相沈積(MOCVD)製程設備……………… 2
圖2.1 化學氣相沉積的主要機制……………………… 7
圖2.2 兩階段磊晶成長法……………………………… 10
圖2.3 MOCVD系統簡圖……………………………………… 15
圖2.4 石墨承座幾何形狀尺寸……………………………… 16
圖2.5 MOCVD爐之邊界條件……………………………………… 16
圖2.6 MOCVD腔體之數值模擬用物理模型……………………… 17
圖3.1 SIMPLE解題步驟流程圖 ………………………………… 23
圖3.2 數值分析之網格驗證……………………………………… 25
圖4.1 磊晶溫度對於沈積速率之影響…………………………… 29
圖4.2 磊晶溫度對於晶體結晶性之影響……………………… 29
圖4.3 腔體操作壓力對於沈積速率之影響……………………… 32
圖4.4 操作壓力0.1ATM時質量分率分佈……………………… 32
圖4.5 操作壓力1ATM時質量分率分佈……………………… 33
圖4.6 操作壓力5ATM時質量分率分佈…………………………… 33
圖4.7 腔體壁面溫度對於沈積速率之影響……………………… 35
圖4.8 壁面溫度300K時質量分率分佈……………………… 35
圖4.9 壁面溫度400K時質量分率分佈……………………… 36
圖4.10 壁面溫度500K時質量分率分佈………………………… 36
圖4.11 壁面溫度300K時溫度分佈……………………………… 36
圖4.12 壁面溫度400K時溫度分佈……………………………… 37
圖4.13 壁面溫度 500K時溫度分佈……………………………… 37
圖4.14 氣體入口處垂直距離對於沈積速率之影響……… 40
圖4.15 垂直距離10MM時質量分率分佈……………………… 40
圖4.16 垂直距離30MM時質量分率分佈……………………………41
圖4.17 垂直距離50MM時質量分率分佈……………………… 41
圖4.18 垂直距離70MM時質量分率……………………………… 42
圖4.19 垂直距離90MM時質量分率分佈分佈……………… 42
圖4.20 氣體入口處垂直距離高度與迴流現象之關係圖……… 43
圖4.21 角度（45、90）側邊抽氣對於沈積速率之影響……… 45
圖4.22 90度側邊抽氣時質量分率分佈…………………… 45
圖4.23 45度側邊抽氣時質量分率分佈…………………… 46
圖4.24 氣體入口直徑對於沈積速率之影響…………………… 48
圖4.25 入口直徑360MM時質量分率分佈………………………… 48
圖4.26 入口直徑315MM時質量分率分佈…………………… 49
圖4.27 入口直徑270MM時質量分率分佈…………………… 49
圖4.28 入口直徑225MM時質量分率分佈…………………… 50
圖4.29 噴氣頭加以氮氣整流裝置對於沈積速率之影響……… 52
圖4.30 氮氣流量1000SCCM時質量分率分佈…………………… 52
圖4.31 氮氣流量3000SCCM時質量分率分佈…………………… 53
圖4.32 氮氣流量5000SCCM時質量分率分佈…………………… 53
圖4.33 氮氣流量7000SCCM時質量分率分佈…………………… 54
圖4.34 氮氣流量9000SCCM時質量分率分佈…………………… 54
圖4.35 氮氣整流裝置與迴流現象之關係圖…………………… 55

表目錄
表4.1 藍寶石為基材之氮化條件及薄膜成長之參數條件…………27
表4.2 磊晶溫度對於薄膜之結晶品質影響…………………………27

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