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研究生:楊勝旭
研究生(外文):Sheng-Shiu Yang
論文名稱:連續複合電鍍拋光機加工條件對矽晶圓拋光機制之影響
論文名稱(外文):Effects of the Machining Conditions on Polishing Mechanism of Silicon Wafer for the Continuous Composite Electroplated Polisher
指導教授:李榮宗李榮宗引用關係
指導教授(外文):Rong-Tsong Lee
學位類別:碩士
校院名稱:國立中山大學
系所名稱:機械與機電工程學系研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:141
中文關鍵詞:加工條件拋光機制矽晶圓連續複合電鍍
外文關鍵詞:Polishing MechanismSilicon WaferMachining ConditionsContinuous Composite Electroplated
相關次數:
  • 被引用被引用:9
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本研究利用連續複合電鍍拋光機,探討加工位置、施加壓力及轉速比等加工參數對矽晶圓加工機制之影響,並找出本拋光機之最佳加工條件。
實驗發現當晶圓試片與拋光盤完全貼合時,機台運轉最平順,可得到較佳的平面度。當施加壓力增加時,晶圓試片之平均粗糙度(Ra)和最大粗糙度(Rmax)隨加工時間的下降速率增加、移除率增加、鏡面化之速率也增快。
轉速比的大小會影響晶圓試片的加工機制以及機台的穩定性。在不同的轉速比情況下,可得到不同平面度之晶圓試片,例如,在轉速比為1時,平面度約為1.5 μm╱38 mm;轉速比為2時,平面度約為2.3 μm╱38 mm。最後,在機台可最穩定加工之轉速範圍內,選取轉速間差異不大且研磨軌跡較複雜之轉速比進行加工,由於加工機制相似,但研磨軌跡分佈較緻密,因此可得較佳之平面度之晶圓試片,轉速比為1.1時,平面度約為1.46 μm╱38 mm;轉速比為1.11時,平面度約為1.45 μm╱38 mm。
理論解析晶圓試片與拋光盤兩者的轉速比對研磨平面上之研磨軌跡型態的影響。得知當轉速比越不規則,研磨軌跡分佈越緻密。軌跡結果並以實驗驗證。
In the study, the effects of the machining conditions, ex, machining positions, loads and rotating speed ratio on machining mechanism of wafer are investigated by using the continuous composite electroplated polisher and find the best machining conditions of the polisher.
Experimental results show that when the wafer and polisher are full contact, the operating of machinery is most smooth and the flatness is better. When the load is increased, the reducing rate of average roughness(Ra)and maximum roughness(Rmax), removal rate, and the speed of mirror degree are increased.
The machining mechanism and the stability of machinery is depended on the value of rotating speed ratio. In the different rotating speed ratio, the flatness of wafer is difference. For example, the rotating speed ratio is 1, the flatness is 1.5 μm/38 mm. The rotating speed ratio is 2, the flatness is 2.3 μm/38 mm. Finally, choose the rotating speed ratio, which the values of rotating speed are close and complex on the range of rotating speed which machinery can be operating most stable in machining process. Because of the machining mechanism are similar and the grinding locus are finer. Hence, the flatness of wafer becomes better. When the rotating speed ratio is 1.1, the flatness is 1.46μm/38 mm. The rotating speed ratio is 1.11, the flatness is 1.45μm/38 mm.
The effect of the rotating speed ratio of the wafer and polisher on the grinding locus type of grinding surface is theoretically analyzed. Results show that when the rotating speed ratio is irregular, the distribution of grinding locus becomes finer. The analyzable results of locus and provable results of experiment are the same.
封面 Ⅰ
授權書 Ⅱ
論文口試審定書 Ⅲ
謝誌 Ⅳ
目錄 Ⅴ
圖目錄 Ⅷ
表目錄 ⅩⅢ
中文摘要 ⅩⅤ
英文摘要 ⅩⅥ

第一章 緒論 1
1-1 前言 1
1-2 研究動機 4
1-3 文獻回顧 5
1-3-1 複合鍍層(Composite Coating) 5
1-3-2 電氣泳動(Electrophoresis) 7
1-3-3 拋光盤的修整方式及其在研磨加工的應用 9
1-3-4 研磨加工中常見的參數探討 13
1-3-5 化學效應在矽晶圓研磨加工的應用 16

第二章 理論基礎 18
2-1 錫金屬電鍍 19
2-2 複合電鍍 23
2-2-1 複合電鍍的形成機制 23
2-2-2 影響析鍍的原因 26
2-3 單晶矽的結構特性 28
2-4 單晶矽的化學水合反應 30

第三章 實驗流程規劃及實驗設備介紹 32
3-1 實驗流程規劃 34
3-2 實驗機介紹 35
3-2-1 複合電鍍系統 36
3-2-2 循環攪拌系統 38
3-2-3 精密研磨系統 38
3-3 試片介紹及前處理方式 39
3-3-1 拋光盤 39
3-3-2 矽晶圓 42
3-4 量測儀器 44
3-5 實驗步驟 45

第四章 實驗結果與討論 46
4-1 晶圓加工位置對晶圓研磨加工的影響 55
4-1-1 晶圓試片量測方法 47
4-1-2 三種晶圓試片伸出量與半徑之比值對晶圓
平面度之影響 49
4-2 施加壓力對矽晶圓加工面粗度的影響 53
4-3 施加壓力對矽晶圓加工面輪廓、平面度、移除量
之影響 67
4-4 轉速比對晶圓研磨加工面粗度的影響 73
4-5 轉速比對矽晶圓加工面輪廓、平面度、移除量之
影響 92
4-6 轉速比複雜程度對晶圓加工特性之影響 98
4-7 研磨軌跡 106
4-7-1 連續複合電鍍拋光機加工型式 106
4-7-2 單一研磨點之研磨軌跡方程式推導 108
4-7-3 單一研磨點之研磨軌跡型態分析 109
4-7-4 多研磨點之軌跡型態 122

第五章 結論 135

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