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研究生:邱文俊
研究生(外文):Wen-June Cho
論文名稱:KOH/醇類蝕刻液系統應用於單晶矽濕式蝕刻之研究
論文名稱(外文):The Research of the KOH/Alcohol Etchant System in Wet Etching of Monocrystal Silicon
指導教授:金惟國
指導教授(外文):Wei-Kuo Chin
學位類別:博士
校院名稱:國立清華大學
系所名稱:化學工程學系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:203
中文關鍵詞:蝕刻單晶矽醇類氫氧化鉀
外文關鍵詞:etchantmonosiliconalcoholKOH
相關次數:
  • 被引用被引用:12
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  • 下載下載:211
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摘要
本研究主要是在探討醇類修飾劑添加入KOH溶液中,所形成之蝕刻液進行矽晶蝕刻反應時,醇類修飾劑對不同矽晶格面之影響。研究內容主要是藉由二種不同形式之醇類修飾劑,分別為一醇類及多醇類,添加入KOH溶液中,在不同的蝕刻溫度、KOH濃度、醇類修飾劑濃度等條件下,進行(100)及(110)矽晶格面之蝕刻反應,觀察蝕刻反應後的結果。在最大蝕刻速率的條件下,進行(100)及(110)矽晶格面之圓形凹孔圖案演化之探討,同時探討(100)矽晶格平台在最大蝕刻速率的條件下進行蝕刻反應,方形凸角邊演化的情況,以便作為凸角補償設計之依據。
研究結果發現,所加入之醇類修飾劑,並不會對(100)晶格面之蝕刻速率有太大之影響。而對(110)晶格面之蝕刻速率有顯著之影響。
在高溫蝕刻及被蝕刻(100)晶格表面平坦化而言,部分醇類修飾劑能夠將被蝕刻之(100)晶格表面平坦化,而沒有錐形體之產生(hillocks)。
在方形凸角演化之觀察中發現,凸角邊底切蝕刻率最快之晶格面為(211),在KOH/1-pentanol蝕刻液系統中, (211)晶格面之蝕刻速率降低的最多。另一方面,隨著醇類分子鏈長之增加,(100)晶格平台之面積縮減越來越少,在KOH/1-pentanol蝕刻液系統中,(100)晶格平台之面積縮減率最小。
Abstract
The study is mainly to discuss the influence of alcohol moderator on the different silicon crystalline plane, when the alcohol moderator was added into the KOH solution.
Two types of alcohols were added into the KOH solution, one OH group alcohol and multi OH group alcohol. The etching rates of silicon (100) plane and (110) plane depended on the conditions of temperature, KOH concentration and alcohol concentration. At the condition of the highest etching rate, it discussed the development of circular concave of (100) silicon and (110) silicon. At the same time, it discussed the development of square convex of (100) silicon mesa under the condition of the highest etching rate for the design of convex compensation.
It was found that the addition of alcohol had no influence on the etching rate of silicon (100) plane, but, significantly affected the etching rate of silicon (110) plane.
For the high temperature etching and the smooth of the etched silicon (100) plane, some alcohols can make the etched silicon (100) plane smooth and produce no hillocks.
By observing the development of the corner of the square convex, the highest etching rate of the convex corner undercut is (211) plane. The most reduction of the etching rate of (211) plane is at the KOH/1-pentanol etchant system. In the other way, the reduction of the (100) plane area gradually becomes less with the increase of the molecular chain length of alcohol. At the KOH/1-pentanol etchant system, the reduction ratio of the (100) plane area is least.
目錄

摘要………………………………………………………I
謝誌………………………………………………………III
目錄………………………………………………………IV
圖目錄…………………………………………………VIII
表目錄……………………………………………………XVIII
壹、 緒論..…………………………………………1
1.1. 乾式電漿蝕刻……………………………………4
1.2. 濕式化學蝕刻…………………………………4
1.2.1. 蝕刻液…………………………………………4
1.3. 研究方向………………………………………8
貳、 理論與文獻回顧………………………………10
2.1. 矽晶體特性…………………………………………10
2.1.1. 矽之晶體結構…………………………………10
2.1.2. N型矽晶(n-type silicon)與P型矽晶(p-type silicon)………13
2.1.3. 電子能帶…………………………………………13
2.2.濕式化學蝕刻(Wet Chemical Etching)………16
2.2.1. 濕蝕刻原理………………………………………16
2.2.2. 均向蝕刻(Isotropic Etching)………………17
2.2.3. 非等向性蝕刻(Anisotropic Etching) ……19
2.3. 相關研究報告及理論……………………… ……24
2.3.1. 鍵結密度模型(Bond density model)……24
2.3.2. 水合模型(Hydration Model)………………24
2.3.3. 表面自由能模型(Surface Free Energy Model)……………24
2.3.4. 電化學模型(Electrochemical model)…………25
2.3.5. 階梯自由能模型(Step-free energy)模型……26
2.3.6. 化學反應速率限制/擴散限制(Chemical reaction-rate limited/ Diffusion limited )………………28
2.3.7. 其他研究報告………………………………31
2.4. 蝕刻表面之凸起結構…………………………35
2.5. 蝕刻停止機制…………………………………37
2.5.1. 高摻雜硼之蝕刻停止機制…………………37
2.5.2. 電化學控制蝕刻停止機制…………………38
2.6. 角落補償機制…………………………………39
2.7. 蝕刻幕罩………………………………………41
2.8. 電腦模擬…………………………………………42
參、實驗方法與設計 …………………………………46
3.1. 實驗分析儀器………………………………………46
3.1.1. 掃描式電子顯微鏡(Scanning Electron Microscopic簡稱SEM )原理………………………………………………46
3.1.2. 原子力電子顯微鏡(Atomic Force Microscopic簡稱AFM )原理………………………………………………48
3.2. 實驗藥品及設備…………………………………50
3.2.1. 實驗設備………………………………………50
3.2.2. 實驗藥品………………………………………50
3.3. 實驗步驟………………………………………53
3.4. 實驗流程………………………………………57
肆、實驗結果與討論………………………………59
4.1.單晶矽在KOH/醇類蝕刻液系統之蝕刻行為……59
4.1.1. (100)單晶矽之蝕刻…………………59
4.1.2. (110)單晶矽之蝕刻.……………………73
4.1.3. (111)單晶矽之蝕刻.………………………82
4.1.4. (110)/(100)晶格面蝕刻速率比…………85
4.1.5. (100)晶格蝕刻表面粗糙度…………………88
4.2. (100)及(110)單晶矽在不同蝕刻液中圓形圖案之演化行為...99
4.2.1. (100)單晶矽……………………………………99
4.2.2. (110)單晶矽……………………………………131
4.2.3.最大非等向蝕刻比值(Highest Anisotropy Ratio)之蝕刻液系統......................................158
4.3. 方形凸角演化(square corner development)..161
4.3.1. 65�aC蝕刻溫度下方形圖案演化行為……162
4.3.2. 85�aC蝕刻溫度下方形圖案演化行 ………175
4.3.3. KOH添加不同醇類修飾劑對(211)晶格面之蝕刻速率之影響............................................184
4.3.4. 不同KOH/醇類蝕刻液系統下蝕刻後(100)方形平台面積…182
伍、結論…………………………………………………191
陸、參考文獻……………………………………………194
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