臺灣博碩士論文加值系統

在Ni/W/Si與Ni/Ta/Si系統實驗中，希望藉著中間鍍附一層鎢或是鉭金屬薄膜擴散阻礙層，來探討其對於增加鎳矽化物NiSi相的熱穩定性效果。而實驗結果顯示在Ni/W/Si與Ni/Ta/Si系統中明顯地延遲了鎳矽化物Ni2Si與NiSi相的生成溫度，但隨著鎳矽化物Ni2Si相生成的同時，中間金屬層W或Ta此時亦被排擠往上方界面處抬升，達不到延遲NiSi2相生成的效果，以致於結果也不如預期所希望地能延長NiSi相的溫度區間。

雖然在延長NiSi相的穩定溫度區間的成效並不好，但是卻意外地發現此系統Ni/W/Si & Ni/Ta/Si對於生成NiSi2相的磊晶卻有非常好的效果。當在溫度高達900℃下退火時，從X-Ray繞射結果顯示NiSi2相只會有磊晶繞射峰生成，再加上高解析穿透電鏡(HRTEM)所拍攝到小區域的原子晶體排列影像，都能更加佐證此兩組系統在高溫900℃下，是很容易形成近乎完美堆疊結構成長的磊晶矽化物NiSi2，而且從實驗結果與之前的文獻發現到，要生成整體NiSi2磊晶只與所鍍附的中間層金屬材料有關與其膜厚並沒有很直接的關係。

Abstract

The effect of a thin interlayer of W or Ta on the stability of NiSi film on Si(100) substrates has been investigated. Without the thin interlayer, the process window of NiSi is 350~750℃. Ta or W addition was found to retard significantly the formation of Ni2Si and NiSi. Nevertheless, the formation temperature of NiSi2 does not increase. When NiSi was detectable by X-ray diffraction, W or Ta element was distributed on the upper portion of the film by AES. The process window of Ni2Si and NiSi were dependent on the thickness of W or Ta. Increasing the thickness of W or Ta delayed
the Ni2Si and NiSi formation.

In Ni/W/Si or Ni/Ta/W system, epitaxial NiSi2 film formed. From the result of X-ray diffraction and HRTEM, There is sufficient evidence to prove that Ni/W/Si or Ni/Ta/W system annealed at 900℃ forming an epitaxial NiSi2 film is better than those without W or Ta interlayer. The good texture of epitaxial NiSi2 film formation depends on the interlayer of W or Ta as a diffusion barrier.

總 目 錄

致謝…………...………...……………..…I
摘要...…………………...……………..…Ⅱ
Abstract…...…………..………...………Ⅲ

內文目錄
第一章 緒論………...…....…………….………..…1
1-1 前言…………………………………….………...…….1
1-2 矽化物製程技術………………………….…...……….1
1-2-1 Polycide...........................……....2
1-2-2 Salicide…………….…………...…….……….2

第二章 金屬矽化物…………...………………………….3
2-2 矽化物選用條件………………………....………………………………..4
2-3 金屬矽化物的生成方式…………...………...…………………………..5
2-3-1 金屬薄膜沈積……………………….……..….……………………..6
2-3-2 金屬矽化物薄膜沈積………………………….………….………..6
2-3-3 離子束方式…………………6
2-4 金屬矽化物成長機制……………6
2-5磊晶成長矽化物………………………………6
2-5-1 簡介…………6
2-5-2 成長方法……………………………………….……………………..7
2-6 矽化鈦(TiSi2)、矽化鈷(CoSi2) 矽化鎳(NiSi) …………8
2-6-1 矽化鈦(TiSi2).………………………8
2-6-2 矽化鈷(CoSi2)…………………………9
2-6-3 矽化鎳(NiSi)..………10

第三章 薄膜應力..……………11
3-1 薄膜應力來源..……………11
3-1-1 內應力(Intrinsic Stress)……11
3-1-2 外應力(Extrinsic Stress)………11
3-2 薄膜應力量測……………………12
3-2-1 內部晶格改變……………………12
3-2-2 外部試片彎曲…………………12
3-3 薄膜應力方程式…………………….13
3-3-1 Stoney方程式…………13
3-3-2 靜作用力/薄膜單位寬度…………14
3-3-3 熱應力………….………………14

第四章 實驗方法………….……………15
4-1 試片的製作…………15
4-1-1 製作流程………15
4-1-2 Cross Section TEM試片製作…………16
4-2 分析儀器試片尺寸….………………………17
4-3 實驗流程.………………………………………18

第五章 分析儀器…………………………19
5-1 臨場雷射掃瞄曲率量測系統 (In-situ Curvature System).19
5-2 X光繞射儀 (X-Ray Diffracteometer)……………………20
5-3 歐傑電子能譜儀 (Auger electron spectrometer；AES)……21

5-4 穿透式電子顯微鏡 (Transmission Electron Mircoscopy，HRTEM)……………………………………………………………22
5-5 四點探針 (Four Point Probe)……………………23

第六章 結果與討論……..……………………………….24
6-1 In-situ Curvature的F/W曲線…………………….……..….….25
6-2 矽化物生成相判定……….…...……………………..…….……..….….25
6-2-1 Ni(1000Å)/W(100Å)/Si(100).………26
6-2-2 Ni(1000Å)/W(50Å)/Si(100)…………27
6-2-3 Ni(1000Å)/W(10Å)/Si(100)…………28
6-2-4 Ni(1000Å)/Ta(100Å)/Si(100).………30
6-2-5 Ni(1000Å)/Ta(50Å)/Si(100)…………31
6-2-6 Ni(1000 Å)/Ta(10Å)/Si(100)…………32
6-3 四點探針……………………………………33
6-4 應力曲線與相鑑定…………………………34
6-4-1 Ni/W/Si系統……………………………34
6-4-2 Ni/Ta/Si系統……………………………36
6-5 磊晶成長的NiSi2………………………37

第七章 結論……………………………40


圖表目錄
圖1-1 Polycide製程 & Salicide製程…………………………………….....41
圖1-2各時期矽化物材料………………………….…………………………...42
表2-1 矽化物週期表………………………………….…………………….….43
表2-2 Result of the Growth of Kinetics Silicides…………..………...…..44
圖2-3 細導線寬效應(narrow linewidth effect) …………….……...…..45
表2-3 Crystallographic Structures and Density of Various Transition Metal Silicides………………....………………………………………..46
圖5-1雷射曲率量測簡圖……………………………….……………………...48
圖6-1 Ni/Si系統鎳矽化物生成溫度區間………….…..…………………...49
圖6-2 Ni/W/Si & Ni/W/Si之In-situ Curvature量測單位應力對單位寬度比(F/W)之曲線……………………….…………...……………...50
圖6-3 Ni(1000Å)/W(100Å)/Si(100) X-Ray繞射峰圖形…………….…..51
圖6-4 AES Ni/W(100Å)/Si縱深分析………………………..…....…………52
圖6-5 Cross Section TEM Ni/W(100Å)/Si & Ni/Ta(100Å)/Si……...….53
圖6-6 Ni(1000Å)/W(50Å)/Si(100) X-Ray繞射峰圖形…………..………54
圖6-7 AES Ni/W(50Å)/Si & Ni/W(10Å)/Si縱深分析.................………..55
圖6-8 Cross Section TEM Ni/W(50Å)/Si & Ni/Ta(100Å)/Si………..…56
圖6-9 Ni(1000Å)/W(10Å)/Si(100) X-Ray繞射峰圖形…………..………57
圖6-10 Ni(1000Å)/Ta(100Å)/Si(100) X-Ray繞射峰圖形…………...…..58
圖6-11 AES Ni(1000Å)/Ta(100Å)/Si縱深分析....……….………………...59
圖6-12 Ni(1000Å)/Ta(50Å)/Si(100) X-Ray繞射峰圖形……...…………60
圖6-13 AES Ni/Ta(50Å)/Si & Ni/Ta(10Å)/Si縱深分析………..………..61
圖6-14 Ni(1000Å)/Ta(10Å)/Si(100) X-Ray繞射峰圖形…………...……62
圖6-15 Ni/W/Si之片電阻值………….......................................................……63
圖6-16 Ni/Ta/Si之片電阻值…………......................................................……64
圖6-17 Ni/W/Si In-situ Curvature F/W曲線與相鑑定結果..........……65
圖6-18 Ni/Ta/Si In-situ Curvature F/W曲線與相鑑定結果..........……66
圖6-19 Cross Section TEM Ni/W&Ta(50Å)/Si (As-Deposited) ..….…67
圖6-20 Ni/W/Si系統之NiSi2 (200) X-Ray繞射峰 (900℃) ..…..…..…68
圖6-21 Ni/Ta/Si系統之NiSi2 (200) X-Ray繞射峰 (900℃) …....…..…69
圖6-22 Ni/W/Si系統之X-Ray NiSi2 (200) & NiSi2 (400) ….........…...…70
圖6-23 Ni/Ta/Si系統之X-Ray NiSi2 (200) & NiSi2 (400) …....…………71
圖6-24 HRTEM Ni/W(100Å)/Si & Ni/Ta(100Å)/Si (900℃) .…………72
圖6-25 HRTEM Ni/W(100Å)/Si & Ni/Ta(100Å)/Si (111)面54.74∘
………………………………………………………………...……………73
圖6-26 Si(100)&(110)&(111)晶面…………..…………74

參考文獻及書目…………………………………….…75

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