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研究生:郭世偉
論文名稱:Bi/Te複合薄膜濺鍍製程暨其熱電性質研究
論文名稱(外文):Study of thermoelectric properties of Bi/Te composite thin films by sputter deposition
指導教授:廖建能
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:79
中文關鍵詞:熱電材料薄膜濺鍍法
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隨著製程技術的提昇積體電路(IC)之元件密度亦大幅度的增加,而與元件效能及可靠度(Reliability)息息相關的散熱問題則成為一極重要的課題。近年來熱電冷凍(Thermoelectric refrigeration)具有易微型化與高可靠度之優點,因此逐漸受到學界與產業界的矚目,而熱電冷凍之效能與熱電材料之熱電優質(ZT值)有極密切之關係,Bi2Te3化合物半導體是目前室溫下所知最佳之熱電材料。本研究係利用磁控濺鍍法(Sputtering)來製備Bi2Te3化合物半導體薄膜,將Bi/Te雙層複合薄膜依序鍍在長有氧化層之矽基材上,並利用高溫熱處理的方法,藉由固態擴散反應生成Bi-Te化合物薄膜,探討Bi及Te薄膜厚度比對於Bi-Te化合物之成份比、電性及熱電性質之影響。研究結果顯示Bi-Te複合薄膜經熱處理(200℃,24小時)後,Seebeck係數由-38.3 μV/K增加至-201.3 μV/K,電阻率由2.02�e10-3 μΩ-cm微幅增加到2.33�e10-3 μΩ-cm,而熱導係數則由2.56 W/m�枝降至0.71 W/m�枝,可得到室溫下(T=300K)最大熱電優值ZT值為0.735。此外利用XRD分析薄膜微結構及其成份,並透過SEM來觀察薄膜表面微結構與兩層薄膜間互相擴散之情形。
With the evolution of VLSI process technology, component density of Integrated circuit(IC) increased significantly and heat dissipation is becoming a very important issue for device performance and IC reliability consideration. Due to the advantages of miniaturization and reliability, the thermoelectric refrigeration is attracting increasing attention recently. The performance of the thermoelectric refrigeration depends closely on the figure of merit(ZT) of the material. The Bi2Te3 compound semi- conductors are best known bulk thermoelectric materials near room temperature regime. In this study, thin film forms of the Bi2Te3 compound semiconductors were prepared by sputter deposition method. The Bi/Te bilayer thin films were deposited on SiO2 substrate in sequence, then transformed into Bi-Te compound by thermal treatment through solid state reation. The thickness ratio of Bi/Te bilayer structures and thermal annealing condition on the composite and the thermoelectric properties of the Bi-Te composite thin films was investigated. The results show that the Seebeck coefficient changed from -38.3μV/K to -201.3μV/K, the resistivity increased slightly from 2.02�e10-3μΩ-cm to 2.33�e10-3μΩ-cm, and the thermal conductivity decreased from 2.56 W/ m�枝 to 0.71 W/m�枝 when the Bi-Te composite thin films was annealed at 200℃ for 24 hours. The maximum ZT were 0.735 in this condition near room temperature. The compound phase was identified by x-ray diffraction technique, the morphology and the interdiffusion at the interface of Bi/Te bilayer thin films were examined by Scanning Electron Microscope(SEM).
摘要……………………………………………………………..…........Ⅰ
英文摘要………………………………………………………………..Ⅱ
目錄……………………………………………………………..………Ⅳ
圖目錄..…………………………………………………………………Ⅶ
表目錄……………………………………………………………..…ⅩⅠ
第一章 緒論…………………………………………………...………...1
1-1 動機……………………………………………………………….1
1-2 熱電致冷器及熱電產生器之原理……………………………….2
1-3 致冷器的效能…………………………………………………….4
1-4 提升熱電材料之ZT值的方法…………………………………...5
1-5熱電材料薄膜化的優點……………..............................................6
1-6本研究將進行之方式……………………………………………..7
第二章 文獻回顧…………………………………………….………….9
2-1 薄膜製備方法…………………………………………………….9
2-2 以濺鍍法沉積薄膜的優點……………………………………...10

第三章 實驗方法與步驟………………………………….…………...12
3-1 基材準備及儀器架構………………………………….………..13
3-2 分析儀器及原理………………………………….……………..15
3-3 實驗步驟………………………………….……………………..19
3-3.1 濺鍍時Ar製程壓力與溫度對薄膜表面結構之影響……..19
3-3.2 熱處理對薄膜金屬相互擴散與合金相生成之分析………21
3-3.2.1 微結構分析…………………………………………….21
3-3.2.2 電性分析……………………………………………….22
3-3.2.3 薄膜電阻隨溫度變化之分析………………………….22
3-3.2.4 熱處理對Seebeck係數之影響分析…………………..22
3-3.2.5 熱導係數之量測……………………………………….24
第四章 結果與討論………………………………….………..……….26
4-1 濺鍍時Ar製程壓力及基材溫度對於單層薄膜的影響……….26
4-1.1 不同Ar製程壓力及基材溫度對碲(Te)薄膜特性之影響…26
4-1.1.1 對表面微結構的影響………………………………….26
4-1.1.2 對Seebeck係數及電阻率的影響……………………..36
4-1.2 不同Ar製程壓力及基材溫度對鉍(Bi)薄膜特性之影響…40
4-1.2.1 對表面微結構的影響………………………………….40
4-1.2.2 對Seebeck係數及電阻率的影響……………………..47
4-2 熱處理對薄膜金屬互相擴散與合金相生成之分析…………...51
4-2.1 試片(一)Bi (1.3mTorr_175℃)/Te(3.0mTorr_125℃)
,厚度600Å/ 4500Å………………………………………52
4-2.1.1 電阻隨溫度變化之分析……………………………….52
4-2.1.2 微結構分析………………………………………….....55
4-2.1.3 熱電性質分析……………………………………….....57
4-2.2 試片(二)Bi(1.3mTorr_175℃)/Te(1.3mTorr_150℃)
,厚度850Å/1600Å……………………………………….61
4-2.2.1 電阻隨溫度變化之分析……………………………...61
4-2.2.2 微結構分析…………………………………………...63
4-2.2.3 剖面微結構分析………………………………….......65
4-2.2.4 熱電性質分析………………………………………...68
第五章 結論………………………………….………………………...74
第六章 參考文獻………………………………….…………………...76
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