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研究生:王賢軍
論文名稱:碳氧化矽與氮氧化矽薄膜應用於離子感測膜之研究
論文名稱(外文):Study on ion sensing membrane with silicon oxycarbide and silicon oxynitride thin films
指導教授:陳建瑞陳建瑞引用關係
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:83
中文關鍵詞:離子感應場效電晶體高密度電漿化學氣相沉積感應耦合型電漿碳氧化矽氮氧化矽
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本實驗以感應耦合電漿源(Inductively Coupled Plasma, ICP)沈積離子感測薄膜,以探討製程溫度與不同氣體流量比對感測膜之敏感度之影響。在沉積完感測薄膜後,利用原子力顯微鏡量測表面的粗糙度、傅利葉紅外光譜儀量測薄膜之化學鍵結、膜厚測厚儀量測薄膜厚度與折射率、低掠角X光繞射分析感測膜結晶情形與敏感度之關係、能量散佈分析儀可分析感測膜之成份與敏感度之關係、C-V曲線量測感測膜之界面陷阱電荷對感測敏感度之影響及I-V曲線量測感測膜之漏電流之情形。
由實驗結果可知當氣體流量比N2O / NH3=0/180,製程溫度200℃時,有最佳之氫離子敏感度54.6mV/pH,其氫離子感測範圍為pH 1至pH 11,非常接近理論值59.6 mV/pH。當氣體流量比N2O / NH3=180/0,製程溫度300℃時,其最佳之鈉離子敏感度29.5mV/pNa,其鈉離子感測範圍為pNa 1至pNa 3;當氣體流量比N2O / NH3=150/30,製程溫度200℃時,可得最佳之鉀離子敏感度 24.5 mV/pK,其鉀離子感測範圍為pK 1至pK 3
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