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研究生:林曉嵐
論文名稱:射頻磁控濺鍍法製備Pb(Zr0.9Ti0.1)O3/Pb(Zr0.1Ti0.9)O3鐵電多層膜
論文名稱(外文):Properties of Pb(Zr0.9Ti0.1)O3/Pb(Zr0.1Ti0.9)O3 multilayered thin flims by rf magnetron sputtering
指導教授:林樹均
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:101
中文關鍵詞:射頻磁控濺鍍鐵電多層膜鋯鈦酸鉛
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本實驗是利用射頻磁控濺鍍法製作PZT(10/90)/PZT(90/10)成份互補多層膜於白金基板(Pt/Ti/SiO2/Si)上。研究重點包括單層膜鉛過量和功率的選取,以及等比例與非等比例成份互補的PZT多層膜對晶體結構、微觀結構、介電性質、鐵電特性、疲勞特性以及漏電流的影響。
結果顯示富鈦的PZT(10/90)單層膜,在鉛過量5 ~ 10 %、RF功率50 W ~ 60 W的條件下,可以在600 oC完全形成單一perovskite相。富鋯的PZT(90/10) 單層膜,在鉛過量10 ~ 15 %、RF功率50 W的條件下,可以在600 oC完全形成單一perovskite相,且其微結構較為緻密,具有最佳的鐵電性。非等比例成份互補多層膜在富鋯PZT(90/10)單層膜厚度與富鈦PZT(10/90)單層膜厚度相等時,有最大的介電常數318、最小的矯頑場62 kV/cm,以及最佳的耐疲勞性質。等比例成份互補多層膜方面,成相溫度較低的富鈦 PZT(10/90) 可以幫助富鋯 PZT(90/10)成相。隨著層數增加:晶粒尺寸會下降,至PZT-12時達到最小約為 10 nm;表面微裂隙所佔的比例減少,PZT-24表面顯得最為緻密;介電常數會上升,至PZT-60達最大值472;殘存極化量會上升至PZT-24的23.6 μC/cm2達最大值,矯頑場會下降至PZT-24的44.3 kV/cm為最小;疲勞性質能有所改善,PZT-8在反轉次數為109次下,仍能維持在88%;漏電流性質以PZT-6在施加電場將近200 kV/cm時,仍維持10�{7A/cm2左右的電流密度為最佳。
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