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研究生:蘇財寶
論文名稱:鍺銻合金摻雜碲微結構暨性質研究
指導教授:周麗新
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:116
中文關鍵詞:摻雜微結構
相關次數:
  • 被引用被引用:3
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本研究以6吋GeSb9二元合金靶材配合Te純金屬靶材進行雙靶磁控共濺鍍(co-sputtering),鍍製不同濃度GeSb9基微量添加硫屬Te之三元合金試片。並量測其薄膜濃度、晶粒尺寸、微結構、熱性、光性等,了解鍺銻合金滲雜Te元素以作為高密度相變型光碟記錄膜材料的可行性。
三元合金之Te濃度控制在8at.%以下,研究結果顯示,未摻雜Te基底合金晶粒尺寸約150~500nm。本實驗的三元合金薄膜濃度範圍內,晶粒尺寸並沒有明顯縮小,但小晶粒的比例變多,並有六爪黑紋晶粒產生,各個六爪黑紋晶粒間有細小晶粒區,即有雙峰分布(bimodal size distribution)的情況發生。而六爪黑紋晶粒尺寸約200~500nm,細小晶粒區晶粒約為50~150nm;經過250℃、恆溫20min的熱處理後,各個濃度形成的結晶相顯示皆為Sb相,並有Sb(003)面的優選現象;DSC結果發現各個合金薄膜其結晶溫度約185.3℃~188.3℃,且大部份濃度都小於基底合金的結晶溫度187.29℃,顯示Te會降低結晶溫度;結晶活化能在3.9eV到5.22eV,Te摻雜濃度對活化能的影響並沒有規律,但整體而言,都小於基底合金的5.22eV,顯示摻雜Te會使得活化能下降;在光譜儀分析方面,滲雜Te元素濃度升高,反射率先上升後下降。反射率對比值在460nm波長下約為12.7%~15.3%,405nm波長下約為9.1%~11.6%。在波長405nm時,Te摻雜為3.6at. %時,有較佳的反射率對比值11.6at. %;並利用橢圓儀數值模擬求得各個濃度的n、k值。無論是初鍍膜或是經過250℃熱處理,恆溫20min的膜,Te的摻雜皆會使得其n、k值上
Abstract
The characteristics of Ternary alloy thin film which co-deposite by Gesb9 binary alloy target and Te target were reported.
In our study, We controlled doped Te concentration of the ternary alloys below 8at%. The TEM results showed that a bimodal size distribution occurred. When we add Te in the Gesb9 binary alloy,We have found six-fold grain formed. Between two six-fold grain, there are some small size grain. The grains will become more when We add higher Te doped concentration. The grain size of six-fold grain is 200~500nm, and small size grain is 50~150nm. The X-ray diffraction results showed that all of the film we deposited only had Sb phase diffraction peaks. The results of DSC(Differential scanning calorimeter) showed the film in our experiments had crystallization temperature range between 185.3℃~188.3℃ and its crystallization activation energy were 3.9eV~5.22eV.It showed doping Te in our thin film will decreased its crystallization temperature and crystallization activation energy. In our study, We observed that the more Te we added, the lower reflection we got. But we would get better reflection contrasts. In n、k analyzer, doping Te will increased n and k values in both as-deposited films and annealed films.
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