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研究生:林弘偉
研究生(外文):Hon Way Lin
論文名稱:氮化銦磊晶薄膜及量子點材料之研究
論文名稱(外文):Study on the Growth and Properties of InN Epitaxial Layers and Quantum Dots
指導教授:果尚志
指導教授(外文):S. Gwo
學位類別:碩士
校院名稱:國立清華大學
系所名稱:物理學系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:57
中文關鍵詞:氮化銦分子束磊晶量子點
外文關鍵詞:InNMBEquantum dots
相關次數:
  • 被引用被引用:13
  • 點閱點閱:203
  • 評分評分:
  • 下載下載:38
  • 收藏至我的研究室書目清單書目收藏:0
  本篇論文研究主題為利用分子束磊晶法(MBE)成長出高品質氮化銦薄膜以及氮化銦量子點,並分析其特性。在氮化銦薄膜方面,我們在Si(111)基板上成長出高品質單晶且為二維成長之氮化銦薄膜,並利用反射式高能量電子繞射系統(RHEED)在成長時做現場監控以判斷薄膜之成長好壞,成長完之樣品,我們利用原子力顯微鏡(AFM)做表面形貌之掃描,並利用X光繞射(X-ray diffraction)以及拉曼光譄(Raman spectrum)量測以確定薄膜之結構與特性與結晶品質。我們以霍爾量測(Hall measurement)決定氮化銦薄膜內的載子遷移率以及載子濃度,諸多量測均確定了我們成長出之氮化銦薄膜有良好的品質。論文內也討論利用不同緩衝層所成長出之氮化銦薄膜,並比較兩者之間的特性有何不同(表面形貌、結構特性、電性、極性等);而利用光致激發螢光光譜量測(photoluminescence spectrum)實驗則確定了氮化銦薄膜的基本能隙值應位於~0.7 eV附近,這個值與以往被認定的值(1.8-2.0 eV)有很大的出入,文中也討論造成此不同的發光波段的成因。
  對於氮化銦量子點的研究,我們利用了兩種不同成長方式:Stranski-Krostanov成長模式與熱退火成長模式,能成長出密度可調的氮化銦量子點,文中將研究不同的成長方法對量子點大小及其分布的影響。
第一章 簡介....................................1

第二章 儀器介紹及原理
2.1 電漿輔助式分子束磊晶系統................6
2.1.1 系統介紹..........................6
2.1.2 工作原理..........................8
2.2 反射式高能量電子繞射...................10
2.3 拉曼光譜...............................15
2.4 X光繞射................................17

第三章 氮化銦薄膜之研究
3.1 氮化銦薄膜之成長介紹...................19
3.1.1 基板選擇與成長結果...............19
3.1.2 成長氮化銦薄膜...................22
3.2 氮化銦薄膜之分析與討論.................24
3.2.1 表面形貌分析.....................24
3.2.2 晶體結構分析.....................27
3.2.3 光學性質分析.....................31
3.2.4傳輸特性量測與分析................35
3.2.5 極性判斷.........................37

第四章 氮化銦量子點之研究
4.1 量子點的形成...........................39
4.2 氮化銦量子點的成長介紹
4.2.1 文獻回顧.........................42
4.2.2 在Si(111)基板上利用Stranski-Krastanov模式成長氮化銦量子點..................................44
4.2.3 在GaN(0001)模板上利用熱退火模式成長氮化銦量子點............................................44
4.3 氮化銦量子點之分布統計.................47

第五章 結論...................................52

參考文獻......................................54
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