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研究生:柯宗憲
研究生(外文):Tsung-Shine Ko
論文名稱:金奈米粒子光學特性及成長奈米材料上之應用研究
論文名稱(外文):Study of Gold Nanoparticles on Optical Characters and Applications for Nanomaterial Growth
指導教授:朱鐵吉
指導教授(外文):Tieh-Chi Chu
學位類別:碩士
校院名稱:國立清華大學
系所名稱:原子科學系
學門:工程學門
學類:核子工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:118
中文關鍵詞:金奈米粒子奈米材料光學特性表面電漿共振鍺量子點
外文關鍵詞:gold nanoparticlesnanomaterialsoptical characterssurface plasma resonancegermanium quantum dots
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  • 被引用被引用:1
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本研究利用橢圓測厚儀量測金奈米粒子的橢圓參數TanΨ、Cos△,先由掃描式電子顯微鏡及X光繞射儀來量測金奈米粒子厚度,再利用光學模擬軟體計算出金奈米粒子在300nm到800nm的折射係數以及消光係數,以計算出複數折射率的型式,N= n-ik。並利用此結果反推得其各個浸泡時間所得的填充率及厚度,佐證SEM及XRR的結果。
利用所得的金奈米粒子光學參數,以光學薄膜理論可模擬出在632.8 nm波長時各種金奈米粒子增強表面電漿共振結構的現象,找出利用金奈米粒子增強時金膜的適合厚度;我們也模擬出用二氧化矽保護金膜及銀膜的可行性,以及在二氧化矽層以自組裝的方式接上金奈米粒子,探討其對表面電漿共振圖譜的影響。
製備高密度量子點於非晶質絕緣層為奈米技術的挑戰之一。本實驗是用利用高密度感應耦合電漿化學氣相沉積法,以金奈米粒子為催化劑,於400℃、500W,0.01Pa工作壓力條件下成長高密度鍺量子點於氧化矽基板上。經由掃描式電子顯微鏡觀察表面型態,低掠射角X光繞射鑑定結構,可得到結晶性良好,密度為1.46×1011/cm2的多晶鍺量子點,且密度與尺寸受金奈米粒子所影響。若將成長的時間延長,將可製備出鍺的多孔性薄膜,並在本論文內探討其成長機制。
Optical thin films of nanoscale particles have recently received much attention since its special optical characteristics can dramatically increase sensitivity of surface plasmon-based sensors. In order to well control assembly process, understanding optical properties of nanoparticles films and accurately predicting the behaviors of optical devices, correct optical constants are necessaries. We added gold nanoparticles before and after measuring the spectroscopic ellipsometric parameters (TanΨ, CosΔ) to calculate the optical constants, thickness and porosity, and measured the film thickness by grazing incidence x-ray reflectivity (XRR) and cross-section SEM. Finally we use the optical constants of gold nanoparticles to simulate and get the optimized thickness of gold film for SPR measurement.
We report the fabrication of germanium quantum dots and porous Ge film on silicon oxide and their growth mechanism. We deposited germanium quantum dots by inductively coupled plasma chemical vapor deposition at 400 °C. Gold nanoparticles, attached to silicon oxide through a self–assembled monolayer, were adopted as catalysts to allow access to a vapor–liquid–solid process. The density of polycrystalline germanium dots is 1.46 x 1011/cm2, which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot and porous Ge film growth process have been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.
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