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研究生:陳和穎
研究生(外文):Ho-Yin Chen
論文名稱:矽鍺異質接面雙載子電晶體在高集極偏壓下的元件模型
論文名稱(外文):The Device Model of SiGe HBTs Operated under High Collector Voltage Bias
指導教授:龔正龔正引用關係
指導教授(外文):Prof. Jeng Gong
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:英文
論文頁數:81
中文關鍵詞:矽鍺雙載子電晶體元件模型高集極偏壓穿遂效應量子效應
外文關鍵詞:SiGeHBTModelHigh collector bias voltageTunneling effectQuantum effect
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本篇論文針對0.18微米製程的矽鍺異質接面雙載子電晶體在高集極偏壓操作點作分析與模型建立。當矽鍺異質接面雙載子電晶體操作在高集極偏壓時,發現集極與基極會出現兩階段突然增加的電流,集基接面由於傳導帶不連續,會形成兩個量子能階,在高集基偏壓下,電子穿隧效應發生,會進而導致兩階段的電流突增。這些穿隧電子經過集基接面的空乏區,會因為累增效應而碰撞產生許多電子電洞對,其中電子與穿隧電子形成巨大的集極電流,電洞則從基極流出形成巨大的基極電流。這兩個量子能階剛好對應到兩個階段的電流突增。

兩階段的電流突增,剛好可以把集極電流跟基極電流各分成四個區段,每一個區段都可以用一個開關控制的路徑來做等效表示,模型中心加上一個正常偏壓下的雙載子電晶體的等效電路,當開關關閉時,元件特性與正常偏壓下相同,當開關打開時,元件特性為正常偏壓特性加上路徑流過的電流值。因此,此篇論文中的電晶體模型可以準確的使較大的操作電壓範圍都符合量測結果。利用這個矽鍺異質接面雙載子電晶體模型,可以模擬一些需要應用到異質接面雙載子電晶體操作在高集極偏壓下的的電路,進而朝向其在小訊號特性與交流特性作深入的分析。

高集極操作電壓的物理原理及分析,與廣大操作區間的電晶體模型,有許多有價值的應用,也可進一步的研究與發展。
The 0.18μm SiGe HBTs operated under high collector bias are analyzed and modeled in this thesis. A new mechanism is found that SiGe HBTs operate at high collector voltage will have two current jumps. These two sudden current jumps occur is due to tunneling effect of electrons in two quantum levels which are formed by conduction band discontinuity at collector-base junction. By multiplying those tunneling electrons with avalanche multiplication factor in the depletion region, large amount of electron-hole pairs will flow out of collector and base terminals. Two stages of current jumps in IC and IB take place correspond to tunnel effect of two quantum levels.

Two current jumps at high collector voltage split IC and IB into four regions, respectively. A device model is built by adding on a general HBT equivalent circuit with four switch controlled paths between both collector-emitter and base-emitter junction. Therefore, the model in this thesis can fit the measured results with widely operating range quite accurately. Some useful applications can be simulated by this developed model, such as small signal characteristics, ac characteristics, and circuit design. There may still have many valuable applications for this new mechanism.
1. Ahlgren, D.C. ; Gilbert, M. ; Greenberg, D. ; Jeng, J. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Schonenberg, K. ; Stein, K. ; Groves, R. ; Walter, K. ; Hueckel, G. ; Colavito, D. ; Freeman, G. ; Sunderland, D. ; Harame, D.L. and Meyerson, B. , “Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace” , Electron Devices Meeting , pp.859–862 , Dec. 1996

2. Schuppen, A. ; Gerlach, S. ; Dietrich, H. ; Wandrei, D. ; Seiler, U. and Konig, U. , “1-W SiGe power HBTs for mobile communication” , Microwave and Guided Wave Letters, IEEE , vol.6 , pp.341-343 , Sept. 1996

3. Schuppen, A. ; Dietrich, H. ; Gerlach, S. ; Hohnemann, H. ; Arndt, J. ; Seller, U. ; Gotzfried, R. ; Erben, U. and Schumacher, H. , “SiGe-technology and components for mobile communication systems” , Bipolar/BiCMOS Circuits and Technology Meeting , pp.130-133 , Oct. 1996

4. Henderson,G.N. ; O'Keefe,M.F. ; Boles,T.E. ; Noonan,P. ; Sledziewski, J.M. and Brown, B.M. , “SiGe bipolar junction transistors for microwave power applications” , Microwave Symposium Digest, 1997., IEEE MTT-S International , vol.3 , pp.1299-1302 , June 1997

5. B. Mazhari and H. Morkoc , “Effect of collector-base valence-band discontinuity on Kirk effect in double-heterjunction bipolar transistors” , University of Illinois at Urbana Champaign , vol.59 , pp.2162-2164 , Oct. 1991

6. Jiann S. Yuan , “SiGe, GaAs, and InP heterojunction bipolar transistors” , A wiley interscience publication , 1999

7. Sankaran, V. ; Hinckley, J.M. and Singh, J. , “Theoretical small-signal performance of Si/SiGe/Si HBT” , Electron Devices, IEEE Transactions on , vol.40 , pp.1589–1596 , Sept. 1993

8. Harame, D.L. ; Comfort, J.H. ; Cressler, J.D. ; Crabbe, E.F. ; Sun, J.Y.-C. ; Meyerson, B.S. and Tice, T. , “Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits” , Electron Devices , IEEE Transactions on , vol.42 , pp.455–468 , March 1995

9. Ben G. Streetman and Sanjay Banerjee , “Solid state electronic devices” , Prentice hall , 2000

10. Yuan Taur and Tan H. Ning , “Fundamentals of modern VLSI devices” , Combridge university press , 1998

11. Gruhle, A. , “The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's” , Electron Devices, IEEE Transactions on , vol.41 , pp.198-203 , Feb. 1994

12. Prinz, E.J. ; Garone, P.M. ; Schwartz, P.V. ; Xiao, X. and Sturm, J.C. , “The effect of base-emitter spacers and strain dependent densities of states in Si/Si1-xGex/Si heterojunction bipolar transistors” , Electron Devices Meeting, 1989. Technical Digest., International , pp.639-642 , Dec. 1989

13. Matutinovic-Krstelj, Z. ; Venkataraman, V. ; Prinz, E.J. ; Sturm, J.C. and Magee, C.W. , ” Base resistance and effective bandgap reduction in n-p-n Si/Si1-xGex/Si HBTs with heavy base doping” , Electron Devices, IEEE Transactions on , vol.43 , pp.457-466 , March 1996

14. Gan, C.H. ; del Alamo, J.A. ; Bennett, B.R. ; Meyerson, B.S. ; Crabbe, E.F. ; Sodini, C.G. and Reif, L.R. , “Si/Si1-xGex valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure” , Electron Devices, IEEE Transactions on , vol.41 , pp.2430-2439 , Dec. 1994

15. Le Tron, B. ; Hashim, M.D.R. ; Ashburn, P. ; Mouis, M. ; Chantre, A. and Vincent, G. , “Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology” , Electron Devices, IEEE Transactions on , vol.44 , pp.715-722 , May 1997

16. Lopez-Gonzalez, J.M. and Prat, L. , “The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBTs” , Electron Devices, IEEE Transactions on , vol.44 , pp.1046-1051 , July 1997

17. Lu, P.-F. and Chen, T.-C. , “Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors” , Electron Devices, IEEE Transactions on , vol.36 , pp.1182-1188 , June 1989

18. Jeong, H. and Fossum, J.G. , “Modeling impact ionization in advanced bipolar transistors for device/circuit simulation” , Bipolar Circuits and Technology Meeting, 1988. , pp 107-110 , Sept. 1988

19. J. J. Ebers and J. L. Moll , “Large-signal behavior of junction transistors” , Proc. IRE , vol.42 , pp.1761-1772 , 1954

20. Fellows, J.A. ; Bright, V.M. and Jenkins, T.J. , “A physics-based heterojunction bipolar transistor model for integrated circuit simulation” , Aerospace and Electronics Conference, 1994. , vol.1 , pp.334-341 , May. 1994

21. Bright, V.M. ; Jenkins, T.J. and Fellows, J.A. , “An accurate physics-based broadband heterojunction bipolar transistor model for SPICE-assisted microwave circuit design” , Microwave Symposium Digest, 1994. , vol.2 , pp.1265-1268 , May 1994

22. Fuse, T. ; Kawanaka, S. ; Inoh, K. and Shino, T. , “A compact lateral-SOI BJT model for RF circuit simulation” , Simulation of Semiconductor Processes and Devices, 1999. , pp.19-22 , Sept. 1999

23. Helmy, A. ; Sharaf, K. and Ragai, H. , “A simplified analytical model for nonlinear distortion in RF bipolar circuits” , Circuits and Systems, 2000. , vol.2 , pp.966-969 , Aug. 2000

24. Tzung-Yin Lee ; Fox, R.M. ; Green, K. and Vrotsos, T. , “Modeling and parameter extraction of BJT substrate resistance” , Bipolar/BiCMOS Circuits and Technology Meeting, 1999. , pp.101-104 , Sept. 1999

25. P. E. Gray ; D. DeWitt ; A. R. Boothroyd and J. F. Gibbons , “Physical electronics and circuit models of transistors” , Semiconductor electronics education committee, vol.2 , 1964

26. K.Schroder , “Semiconductor material and device characterization” , A Wiley-interscience publication , 1998

27. I. Getreu , “Modeling the bipolar transistor” , Tektronix , Beaverton , 1976

28. K. C. Sedra and K. C. Smith , “Microelectronic Circuits” , Saunders college publishing , 1997

29. 曾謹言and 錢伯初 , “量子力學專題分析” , 凡異出版社 , 1987

30. Raymond A. Serway ; Clement J. Moses and Curt A. Moyer , “Modern physics” , Saunders college publishing , 1997
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