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研究生:王一龍
研究生(外文):I-Long Wang
論文名稱:銻砷化鎵/鋁砷化鎵和銻砷化鎵/砷化鎵量子井之光學特性研究
論文名稱(外文):Studies of Optical Properties of Type-I GaAsSb/AlGaAs and Type-II GaAsSb/GaAs quantum wells
指導教授:陳永芳陳永芳引用關係
指導教授(外文):Yang-Fang Chen
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:物理研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:英文
論文頁數:65
中文關鍵詞:銻砷化鎵量子井鋁砷化鎵砷化鎵
外文關鍵詞:quantum wellsGaAsSb/AlGaAsGaAsSb/GaAs
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Abstract

In this thesis we report on the studies of optical properties of type-I GaAs0.7Sb0.3 / Al0.3Ga0.7As single quantum well and type-II GaAsSb/GaAs multiple quantum wells structures. Photoluminescence (PL), Raman scattering, and X-ray diffraction have been performed. We have discovered several interesting results, which are summarized as follows.

I. Effects of annealing on the properties of type-I GaAs0.7Sb0.3 / Al0.3Ga0.7As single quantum wells
We report a detailed investigation on effects of annealing on the properties of type-I GaAs0.7Sb0.3 / Al0.3Ga0.7As single quantum wells by photoluminescence (PL), Raman scattering, and X-ray diffraction. Based on X-ray and Raman scattering measurements, we show that the intermixing caused by Al ions diffusion is the main reason for the observed effect, including the blueshift of PL peak energy and the increase of PL intensity. In addition, we also found that the growth condition of the capping layer can have a great influence on the optical properties of GaAsSb/AlGaAs quantum wells.

II. Dependence of optical anisotropy in type-II GaAsSb/GaAs multiple quantum wells on the growth conditions of heterostructures
The interruption effect by different ions on the interfaces of GaAs/GaAsSb MQWs has been studied by X-ray diffraction and photoluminescence (PL). Based on the increase of the polarization degree and the shaper satellite peaks of the X-ray diffraction, it is found that the interface between the well and barrier is flatter and more abrupt as the interface is flashed by Sb ions and the difference in the number of interface chemical bonds between the direction ( 011 ) and (0 1) increases. However, the effect is opposite as the interface is flashed by As ions.
List of figures …………………………………………………………..iii
List of tables ………………………………………………………..…..vi

1. Introduction ……………………………………………………….…1

2. Theoretical Background …………………………...……………...…4
2.1 Photoluminescence (PL) ………………………………………....4
2.1.1 Introduction………………………………………...............4
2.1.2 What is Photoluminescence Spectroscopy…………………5
2.1.3 How is Photoluminescence Spectroscopy Used
to Characterize Semiconductors ?.........................................8
2.1.4 Band Structure……………………………………………..8
2.1.5 Free-carrier Properties…………………………………….10
2.1.6 Impurities………………………………………………….11
2.1.7 Recombination Process…………………………………...13
2.1.8 Photoluminescence Apparatus…………………………….16
2.2 Raman Scattering………………… …………………………….18
2.2.1 Introduction……………………………………………….18
2.2.2 Stokes shit and Anti Stokes shift………………………….18
2.2.3 Raman Scattering Apparatus……………………………...20

3. Effects of annealing on the properties of type-I GaAs0.7Sb0.3 / Al0.3Ga0.7As single quantum wells……………………………………………25
3.1 Introduction …………………………………………………....25
3.2 Experiment...………………………………………………..….27
3.2.1 Sample Preparation……………………………………….27
3.2.2 Optical Measurements……………………………………31
3.3 Results and Discussion ………………………………………..32
3.4 Summary ………………………………………………………34

4. Dependence of optical anisotropy in type-II GaAsSb/GaAs multiple quantum wells on the growth conditions of heterostructures
4.1 Introduction …………………………………………………....48
4.2 Experiment...………………………………………………..….49
4.2.1 Sample Preparation……………………………………….49
4.2.2 Optical Measurements……………………………………51
4.3 Results and Discussion ………………………………………..52
4.4 Summary ………………………………………………………54

5. Conclusion …………………………………………………..………65
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