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研究生:嚴秉廉
研究生(外文):Bing-Lien Ynn
論文名稱:高亮度共振腔發光二極體之研究
論文名稱(外文):Study of High Brightness Resonant Cavity Light Emitting Diodes
指導教授:林浩雄林浩雄引用關係
指導教授(外文):Hao-Hsiung Lin
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電子工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:71
中文關鍵詞:共振腔發光二極體高必v氧化
外文關鍵詞:RCLEDoxidationhigh power
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在本篇論文中,我們分別討論870nm共振腔發光二極體的研製及其特性分析。在3.89% duty cycle 400mA的操作條件下,元件的最大發光強度為42.5mW,相對應的wall plug efficiency可達到6%。
我們採用金屬有機化學汽相沉積 (MOCVD) 的方式,在(100)指向的砷化鎵基板成長元件結構。本元件採用砷化鋁鎵的布拉格反射器作為共振腔的上下反射層,其中下層週數為30週,元件的主動層則為砷化銦鎵的量子井,另外為了增加元件的發光強度,亦設計使用5�慆的砷化鋁鎵厚窗層以及適當的電極設計來避免電流擁擠效應。然而,本元件亦因為此厚窗層之共振而產生多模態之光譜,最佳的解決方法,就是在厚窗層的表面鍍一層薄膜做為抗反射結構以破壞其共振模態,但是卻也因此大幅增加元件製作的困難度和成本。在本篇論文中,吾人藉由側向氧化以提升元件發光強度的機會,成它a在Al0.5Ga0.5As上成長一層做為抗反射層的氧化物薄層以達到模態抑制的效果。
In this thesis, fabrication and characterization of resonant cavity light emitting diodes operated at �隉�870nm are studied. An output power of 45.2mW and a wall plug efficiency of 6% at 400mA injection pulsed current were attained at room temperature from a diode with 1-���nthick active region.
The device structure was grown by metal-organic chemical vapor deposition (MOCVD) on (100) Si-doped GaAs wafers. The active region was sandwiched between Al0.12Ga0.88As �} Al0.9Ga0.1As distributed Bragg reflectors. An Al0.5Ga0.5As thick window layer was designed to decrease the sheet resistance at the p-side of the junction diode and to improve the current spreading at high power operation. However, the thick window layer also serves as an extra cavity and induces a multimode spectrum. We found that with a thin oxide deposited on the device surface, the cavity mode of the RCLED can be readjusted and even be removed.
Contents
中文摘要………..……………………………………………………………….…… 4
Abstract………..………………………………………………………………………. 5
Contents………..……………………………………………………………………… 6
Table Captions………..……………………………………………………………… 8
Figure Captions………..………………………………………………………… 9
Chapter 1 Introduction………………..…………………………....................... 12
Chapter 2 Fabrication and Characterization of the RCLED…………..… 16
2.1 RCLED structure………………………………………….………….. 16
2.2 Relation between the Fabry-Perot mode and the quantum well
mode…………………………………………………………………... 18
2.3 Diode Fabrication Process………………………………………….. 20
2.4 Measurement……………………………………............................. 21
2.4.1 Current-voltage measurement………………….......................... 21
2.4.2 Light-intensity current (L-I) measurement………....................... 21
2.4.3 Electroluminescence(EL) spectrum measurement…………….. 22
2.4.4 Far-field pattern measurement…………………………………… 22
2.4.5 Transient behavior measurement………………………………... 23
Chapter 3 Experimental Results and Discussion………………………... 36
3.1 Oxidation data analysis using the Deal & Grove mode…………... 36
3.2
Current-Voltage and Light power-Injection
current (L-I)
relationship……………………….………………. 39
3.3 Electroluminescence (EL) spectrum……………………………….. 43
3.4 Far-field pattern…………………………………….......................... 44
3.5 Transient behavior……………………………………………………. 46
Chapter 4 Conclusion…………………………………………………………..... 67
Reference……………...………………………………………………...………….... 68
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