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研究生:蘇郁倫
研究生(外文):Yu-Lun Su
論文名稱:矽奈米結構之場發射發光元件
論文名稱(外文):Silicon based nano-structure field emission light emitting device
指導教授:林清富林清富引用關係
指導教授(外文):Qing-Fu Lin
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電子工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:148
中文關鍵詞:矽奈米結構場發射
外文關鍵詞:field emissionnano-structure
相關次數:
  • 被引用被引用:1
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  • 收藏至我的研究室書目清單書目收藏:0
本篇論文的目的,在於發展以矽為基礎,生長出金屬奈米尖端結構以及矽蝕刻奈米尖端結構,配合上螢光粉以及真空系統,作為場發射顯示器的主要元件。
實驗中首先在矽晶片表面鍍上金屬並旋塗奈米粒子,並使用在元件上加入電壓的方法,企圖使矽晶片上的金屬薄膜產生奈米尖端結構,生長快速而且製程簡便,同時測試它的各種條件,以了解是什麼因素在影響奈米結構的生成;另一種方法是在矽晶片表面直接旋塗奈米粒子,使用乾蝕刻的方法,讓矽表面產生奈米尖端結構,條件易於控制而且具有均勻的蝕刻表面。
接著把製作好的奈米元件與塗佈有螢光粉的ITO玻璃互相靠近,並放入真空系統當中,在元件上加入電壓使其產生場發射的效應。其中我們發現奈米粒子的排列對於結構製作的影響,以及場發射效應時的各種物理現象。
最後針對場發射元件的弱點以及參考可以改進的方法使用光罩顯影製程來保護奈米結構以及發光頻譜的測量,得知場發射效應的效率以及所需的電壓電流等等條件,也針對實驗中遇到的各種問題提出改善的方法。
In this thesis, we develop the silicon based metal nano-pillar structure and silicon dry etching nano-pillar structure. Then use the phosphor and vacuum system to make the main field emission display(FED) device.

In my experience the silicon wafer is coated a metal thin film and spin coated the nano-particle. Then I add voltage on the device to produce the nano-pillar structure on the thin metal film over the silicon. This method is quick and the process is easy. I also measured its conditions to understand the factor of the forming of the nano-pillar. Spin coating the nano-particle on the silicon wafer is another method. I use the dry etching method to make the nano-pillar structure on silicon wafer. The condition is easy to control and it has uniform dry etching surface.

Then I put the completed nano-device and the ITO glass coated by phosphor together, then put them into the vacuum system, I add the voltage to emit the electrons. We find that the uniform of nano-particle will effect the nano-pillar structure and the phenomenon of field emission.

At last I find the disadvantages of the field emission device and find the improvements. I use the photo mask lithography process to protect the nano-pillar structure, and measure the spectrum of the device. We find the field emission efficiency and the conditions of voltage and current, etc. I also bring up some improvements to overcome the problems.
目錄
第一章 引言 1
1-1 動機 1
1-2 場發射顯示器的原理與發展 3
1-3 論文導覽 9
第二章 以金屬絲方法製作之場發射顯示器基本結構 12
2-1 緣起 12
2-2 金的元件製作 14
2-3 金屬種類的變因 14
2-4奈米粒子層的厚度 19
2-4-1金的奈米粒子層的厚度測試 20
2-4-2銀的奈米粒子層的厚度測試 23
2-4-3鉻的奈米粒子層的厚度測試 25
2-4-4討論 28
2-5金與鉻的進一步量測 28
2-5-1金的雙面量測 29
2-5-2鉻的雙面量測 30
2-6 SEM表面奈米結構觀察 32
2-7 各種條件的金、銀測試與奈米結構 44
2-8 一些奇特的結構 57
2-9 總結 63
第三章 以蝕刻方式製作之場發射顯示器基本結構 69
3-1蝕刻過後的SEM觀察 71
3-2 螢光粉的量測 74
3-2-1 螢光粉的I-V量測 74
3-2-2 最低電壓的量測 77
3-2-3 PL量測 78
3-2-4 螢光粉顆粒觀察 80
3-2-5 螢光粉的旋塗 83
3-3 奈米結構的再製作 84
3-4 場發射電子的計算 91
第四章 真空系統與光罩微影製程 95
4-1 基本測試 95
4-2 真空系統 98
4-3 實驗量測 101
4-3-1 金屬晶片與奈米螢光粉的實驗量測 101
4-3-2 金屬晶片與一般螢光粉的量測 109
4-3-3 矽蝕刻晶片與螢光粉量測 115
4-4 光罩微影製程以及三極元件 118
4-5 頻譜量測 128
4-6 結論 136
第五章 結論 144
5-1 各章回顧 144
5-2 改善方法與未來展望 146
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[1] Yoshitaka Taniyasu,a) Makoto Kasu, and Toshiki Makimoto, Field emission properties of heavily Si-doped AlN in triode-type display structure, APPLIED PHYSICS LETTERS VOLUME 84, NUMBER 12 22 MARCH 2004
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