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研究生:宋長泰
研究生(外文):Sung Chang-Tai
論文名稱:以聚碳矽烷高溫分解形成之碳化矽薄膜及其應用於鑽石成長緩衝層之研究
論文名稱(外文):Study of Silicon Carbide Thin Films from Polycarbosilane Acting as Buffer Layers for Diamond Film Growth
指導教授:周賢鎧
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:材料科技研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2003
畢業學年度:92
語文別:英文
論文頁數:48
中文關鍵詞:聚碳矽烷碳化矽鑽石膜擇區成長熱燈絲化學氣相沉積法
外文關鍵詞:diamond filmHFCVDpolycarbosilaneselective growthsilicon carbide
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本論文係使用聚碳矽烷(PCS)作為原料,溶於甲苯並旋轉塗佈於矽晶片上,在高溫真空的環境下熱分解成碳化矽薄膜,並以此做為沉積鑽石膜之緩衝層。本實驗將調製不同聚碳矽烷濃度在不同的持溫條件下形成碳化矽膜,使用掃描式電子顯微鏡(SEM)觀察其表面形態,傅立葉紅外線光譜儀(FTIR)及X-ray研究其鍵結及結構,最後尋找出最適宜做為鑽石沉積緩衝層之碳化矽製程參數。
另一方面,本文運用紫外光照射之微影技術,控制碳化矽薄膜形成於設計的區域,並利用鑽石在碳化矽與矽基材上之高成核密度差,形成擇區成長。此一技術將可於未來降低鑽石膜與碳化矽介面層之熱應力,並提高其製程上之應用。
本論文中的鑽石膜以熱燈絲化學氣相沉積法(HFCVD)沉積,在不同的系統壓力及基材溫度下成長鑽石,並用SEM及X-ray光譜儀探討不同沉積環境下對表面形態及生長速率之影響。
Polycarbosilane(PCS) was dissolved in toluene at various concentration levels and the resulting solutions were spun-coated onto <100>silicon wafers. The films were heat-treated under vacuum at temperatures in the range between 900℃ and 1150℃,and held for different times to from silicon carbide (SiC). The resulting SiC films were characterized using Fourier transform infrared spectrophotometer(FTIR), X-ray diffractometry (XRD), and scanning electron microscopy (SEM).
The SiC films were used as buffer layers for diamond film growth. The diamond films were grown by hot filament chemical vapor deposition (HFCVD). In this study the effects of the growth pressure and subtract temperature on the morphology of diamond films were discussed. The structure of the diamond film was characterized by SEM , and XRD. The nucleation density of diamond on silicon was very low(6.2×106/cm2), but the nucleation density of diamond on SiC buffer layer was enhanced to 1.2×1011/cm2.The effect of enhancement of diamond nucleation may provide a solution for selective growth of diamond film.
中文摘要 ………………………………………………………………………i
英文摘要………………………………………………………………………ii
致謝 …………………………………………………………………………iii
目錄……………………………………………………………………………iv
圖索引 …………………………………………………………………………v
表索引 ………………………………………………………………………vii
一.緒論………………………………………………………………………1
二.文獻回顧…………………………………………………………………3
2.1鑽石之結構與性質……………………………………………………3
2.2人工合成鑽石的演進…………………………………………………4
2.3各種化學氣相沉積法…………………………………………………5
2.4碳化矽之結構與製程方式……………………………………………7
2.5聚碳矽烷熱分解成碳化矽之析………………………………………9
2.6碳化矽膜厚之控制……………………………………………………11
三.實驗方法…………………………………………………………………12
3.1實驗材料………………………………………………………………12
3.2分析儀器………………………………………………………………12
3.3實驗製程設備…………………………………………………………12
3.4實驗步驟………………………………………………………………12
3.4.1試片切割與清洗……………………………………………………12
3.4.2聚碳矽烷溶液的調製與塗佈………………………………………13
3.4.3微影製程……………………………………………………………13
3.4.4碳化矽之製程………………………………………………………13
3.4.5鑽石之沉積…………………………………………………………15
3.5實驗流程………………………………………………………………16
四.結果與討論………………………………………………………………17
4.1持溫時間對碳化矽熱分解之關係……………………………………17
4.2 PCS濃度對碳化矽熱分解之關係……………………………………22
4.3反應溫度對碳化矽熱分解之影響……………………………………29
4.4壓力對成長鑽石薄膜表面形態之影響………………………………35
4.5基材溫度對成長鑽石薄膜表面形態之影響…………………………37
4.6利用紫外光微影技術做擇區成長鑽石薄膜…………………………40
五.結論………………………………………………………………………44
參考文獻………………………………………………………………………45
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