本文中採用一分子結構類似TEOS的新型含碳氟矽氧烷類先驅物十三氟-1,1,2,2-四氫辛烷基-三乙氧基矽烷 (tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane, TDF-TEOS)為先驅物，藉由平板式電漿輔助化學氣相沉積系統來成長低介電係數膜。
以TDF-TEOS長膜的部份，發現電漿功率增加至30W，薄膜中的F含量減少了20% ; 氧氣流量從0.2 sccm增加至1 sccm，Si、O的比例分別從7%增加至30%以及14%增加至37%，但碳分子比例會從61%減少至14%。而在6 W及0.2 sccm下成長出一介電常數為2.1的薄膜，當薄膜以回火處理後介電常數會上升至2.6~4左右，且膜厚降低了10~20%，皆因薄膜中碳氟熱穩定性不佳而在回火處理時揮發掉所致。
在添加TMS長膜的部份，我們以電漿功率30 W氧氣流量1 sccm所成長之薄膜來作比較，發現在添加TMS之後，減少的膜厚由9.0%降低到6.7%，但介電係數增加至5.3，推測原因是薄膜中碳氟減少且碳的大量增加所致。

Low-k film with a dielectric constant as low as 2.1 have been successfully synthesized using a newly precursor named tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane (TDF-TEOS) in a parallel plate PECVD system at 6 W and 0.2 sccm. When plasma power increases to 30 W, atomic ratio of F decreases 20%. According to oxygen flow rate increases from 0.2sccm to 1sccm, atomic ratio of Si and O increases from 7% ~ 30% and 14% ~ 37%, respectively. But the atomic ratio of C decreases from 61% to 14%. After annealing, dielectric constant is up to 2.6 ~ 4 and thickness of the film decreases about 10~20%. The reason for dielectric constant increases and thickness of film decreases is fluoride(CF) evaporating from the film.
Adding TMS when growing low-k film at 30 W and 1sccm, thickness of the film decreases about 6.7%. It is less than the film without adding TMS(9%). But its dielectric constant is up to 5.3. The reason for dielectric constant increases is fluoride(CF) decreasing and C content increasing greatly.

目 錄
中文摘要 I
英文摘要 II
誌謝 III
目錄 IV
圖索引 VI
表索引 XVI
第一章 前言 1
1.1 電阻電容效應與介電係數 1
1.2 低介電材料基本性質之要求 2
1.3 低介電材料的製備法 4
1.4 低介電材料之介紹 5
1.4-1 以CVD法製備的無機介電膜 5
1.4-2 以CVD法製備的碳氟高分子介電膜 8
1.4-3 以CVD法製備的無機/碳氟高分子介電膜 9
1.4-4 以CVD法製備的有機高分子介電膜 9
1.4-5 以CVD法製備的無機/有機混合介電膜 10
1.4-6 以SOG法製備的無機高分子介電膜 11
1.4-7 以SOG法製備的有機高分子介電膜 11
1.5 本論文的研究方向 12
第二章 實驗相關部份 25
2.1 實驗氣體及藥品 25
2.2 實驗裝置及方法 26
2.3 分析儀器 30
第三章 結果與討論…… 34
3.1 不同電漿功率下的長膜特性 35
3.1-1 薄膜鍵結分析 35
3.1-2 長膜速率的探討 35
3.2 在N2氣氛下回火處理後的薄膜特性分析 42
3.2-1 薄膜鍵結分析 42
3.2-3 回火後膜厚的變化 43
3.3 在25% O2氣氛下回火處理後的薄膜特性分析 48
3.3-1 薄膜鍵結分析 48
3.3-3 回火後膜厚的變化 48
3.4 k值變化之討論… 53
3.5 添加TMS之影響… 58
第四章 結論 60
參考文獻 63
作者簡介 69

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