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研究生:蘇士豪
研究生(外文):Shi-hau Su
論文名稱:以新型TDF-TEOS先驅物製備含矽氟/碳氟鍵結的低介電係數膜層及其熱穩定性之分析
論文名稱(外文):Synthesis of CF/SiF Low-k Films Using TDF-TEOS as the Precursor and analyze stability of the film
指導教授:洪儒生洪儒生引用關係
指導教授(外文):L. S. Hong
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:化學工程系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:69
中文關鍵詞:電漿輔助化學氣相沉積系統低介電係數回火
外文關鍵詞:PECVDlow dielectric constantannealing
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本文中採用一分子結構類似TEOS的新型含碳氟矽氧烷類先驅物十三氟-1,1,2,2-四氫辛烷基-三乙氧基矽烷 (tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane, TDF-TEOS)為先驅物,藉由平板式電漿輔助化學氣相沉積系統來成長低介電係數膜。
以TDF-TEOS長膜的部份,發現電漿功率增加至30W,薄膜中的F含量減少了20% ; 氧氣流量從0.2 sccm增加至1 sccm,Si、O的比例分別從7%增加至30%以及14%增加至37%,但碳分子比例會從61%減少至14%。而在6 W及0.2 sccm下成長出一介電常數為2.1的薄膜,當薄膜以回火處理後介電常數會上升至2.6~4左右,且膜厚降低了10~20%,皆因薄膜中碳氟熱穩定性不佳而在回火處理時揮發掉所致。
在添加TMS長膜的部份,我們以電漿功率30 W氧氣流量1 sccm所成長之薄膜來作比較,發現在添加TMS之後,減少的膜厚由9.0%降低到6.7%,但介電係數增加至5.3,推測原因是薄膜中碳氟減少且碳的大量增加所致。
Low-k film with a dielectric constant as low as 2.1 have been successfully synthesized using a newly precursor named tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane (TDF-TEOS) in a parallel plate PECVD system at 6 W and 0.2 sccm. When plasma power increases to 30 W, atomic ratio of F decreases 20%. According to oxygen flow rate increases from 0.2sccm to 1sccm, atomic ratio of Si and O increases from 7% ~ 30% and 14% ~ 37%, respectively. But the atomic ratio of C decreases from 61% to 14%. After annealing, dielectric constant is up to 2.6 ~ 4 and thickness of the film decreases about 10~20%. The reason for dielectric constant increases and thickness of film decreases is fluoride(CF) evaporating from the film.
Adding TMS when growing low-k film at 30 W and 1sccm, thickness of the film decreases about 6.7%. It is less than the film without adding TMS(9%). But its dielectric constant is up to 5.3. The reason for dielectric constant increases is fluoride(CF) decreasing and C content increasing greatly.
目 錄
中文摘要 I
英文摘要 II
誌謝 III
目錄 IV
圖索引 VI
表索引 XVI
第一章 前言 1
1.1 電阻電容效應與介電係數 1
1.2 低介電材料基本性質之要求 2
1.3 低介電材料的製備法 4
1.4 低介電材料之介紹 5
1.4-1 以CVD法製備的無機介電膜 5
1.4-2 以CVD法製備的碳氟高分子介電膜 8
1.4-3 以CVD法製備的無機/碳氟高分子介電膜 9
1.4-4 以CVD法製備的有機高分子介電膜 9
1.4-5 以CVD法製備的無機/有機混合介電膜 10
1.4-6 以SOG法製備的無機高分子介電膜 11
1.4-7 以SOG法製備的有機高分子介電膜 11
1.5 本論文的研究方向 12
第二章 實驗相關部份 25
2.1 實驗氣體及藥品 25
2.2 實驗裝置及方法 26
2.3 分析儀器 30
第三章 結果與討論…… 34
3.1 不同電漿功率下的長膜特性 35
3.1-1 薄膜鍵結分析 35
3.1-2 長膜速率的探討 35
3.2 在N2氣氛下回火處理後的薄膜特性分析 42
3.2-1 薄膜鍵結分析 42
3.2-3 回火後膜厚的變化 43
3.3 在25% O2氣氛下回火處理後的薄膜特性分析 48
3.3-1 薄膜鍵結分析 48
3.3-3 回火後膜厚的變化 48
3.4 k值變化之討論… 53
3.5 添加TMS之影響… 58
第四章 結論 60
參考文獻 63
作者簡介 69
參考文獻
1. 莊達人,VLSI製造技術,高立圖書(2002)。
2. L. Peters, “Pursuing the Perfect Low-k Dielectric”, Semiconductor International Sep., 21(1998).
3. W. W. Lee, P. S. Ho, “Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications”, MRS Bull. Oct. , 19 (1997).
4. 陳麗梅,”多孔低介常數材料”,電子月刊第七卷第四期(2001)。
5. H. S. Nalwa, ”Handbook of Low and High Dielectric Constant Materials and Their Applications’’, 1 (1999).
6. 劉柏村、張鼎張,”低介電常數材料應用在導線連線製程技術的探討”,奈米通訊,第九卷第二期,第1頁 (2002)。
7. 沈國宏、李盈壕,” 銅製程、低介電材料在未來之應用發展”,電子與材料雜誌,第十期,第145頁(2001)。
8. 劉柏村,”低介電製程化學品”,電子專刊,第九卷第五期,第143頁(2003)。
9. 楊正杰、張鼎張、鄭晃忠,”銅金屬與低介電常數材料與製程”,工業材料,第167期,第121頁 (2000)。
10. 邱正杰,”低介電係數Low-k材料在IC製程上的應用”,化工技術,第七卷第十二期,第205頁 (1999)。
11. Z. C. Wu, Z.W. Shiung, C. C. Chiang, W. H. Wu, M. C. Chen, S. M. Jeng, W. Chang, P. F. Chou, S. M. Jang, C. H. Yu, M. S. Liang, “Physical and Electrical Characterization of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides, J. Electrochem. Soc. 148, F127 (2001).
12. Y. H. Kim, M. S. Huang, H. J. Kim, “ Infrared Spectroscopy Study of Low-Dielectric-Constant Fluorine-Incorporated and Carbon-Incorporated Silicon Oxide Films”, J. Appl. Phys. 90, 3367 (2001).
13. T. Usami, K. Shimokawa, M. Yoshimru, “Low Dielectric Constant Interlayer Using Fluorinated-Doped silicon Oxide”, Jpn. J. Appl. Phys. 33, 408 (1994).
14. S. W. Lim, Y. Shimogaki, “Preparations of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition”, Appl. Phys. Lett. 68, 832 (1996).
15. S. W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, H. Komiyama, “Preparations of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition”, Jpn. J. Appl. Phys. 35, 1468 (1996).
16. S. W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, H. Komiyama, “Reduction Mechanism in the Dielectric Constant of Fluorine-Doped Silicon Dioxide Film” J. Electrochem. Soc. 144, 68 (1997).
17. S. M. Han, E. S. Aydil, “Reasons for Lower Dielectric Constant of Fluorinated SiO2 Films, J. Appl. Phys. 83, 2172 (1998).
18. S. M. Han, E. S. Aydil, “Structure and Chemical Composition of Fluorinated SiO2 Films Deposited Using SiF4/O2 Plasma”, J. Vac. Sci. Technol. A 15, 2893 (1997).
19. H. Kitoh, M. Muroyama, M. Sayaki, M. Iwasawa, “Formation of SiOF Films by Plasma-Enhanced Chemical Vapor Deposition Using (C2H5O)3SiF”, Jpn. J. Appl. Phys. 35, 1464 (1996).
20. H. Tetsuya, M. Yukinobu, Y. Ryuichi, “Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluoro-trialkoxy-silane Group and Pure Water as Gas Sources”, J. Electrochem. Soc. 140, 3599 (1993).
21. H. Miyajima, R. Katsumata, Y. Nakasaki, Y. Nishiyama, N. Hayasaka, “Water Absorption Properties of Fluorine-Doped SiO2 Films Using Plasma-Enhanced Chemical vapor Deposition”, Jpn. J. Appl. Phys. 35, 6217 (1996).
22. Y. J. Mei, T. C. Chang, S. J. Chang, F. M. Pan, M. S. K. Chen, A. Tuan, S. Chou, C. Y. Chang, “Stabilizing Dielectric Constant of Fluorine-Doped SiO2 Films by N2O and NH3 Plasma Post-Treatment”, Thin Solid Films 308-309, 501 (1997).
23. S. M. Yun, H. Y. Chang, M.S. Kang, C. K. Choi, “Low Dielectric Constant CF/SiOF Composite Film Deposited in a Helicon Plasma Reactor”, Thin Solid Films 341, 109 (1999).
24. P. F. Wang, S. J. Ding, D. W. Zhang, J. T. Wang, W. W. Lee, “An Amorphous SiCOF Film with Low Dielectric Constant Prepared by Plasma-Enhanced Chemical Vapor Deposition”, Thin Solid Films 385, 115 (2001).
25. S. J. Ding, D. W. Zhang, J. T. Wang, W. W. Lee, “Low Dielectric Constant SiO2:C,F Films Prepared from Si(OC2H5)4/C4F8/Ar by Plasma-Enhanced CVD”, Chem. Vap. Deposition 7, 142 (2001).
26. S. J. Ding, L. Chen, X. G. Wan, P. F. Wang, J. Y. Zhang, D. W. Zhang, J. T. Wang, “Structure Characterization of Carbon and Fluorine-Doped Silicon Oxide Films with Low Dielectric Constant”, Materials Chemistry and Physics 71, 125 (2001).
27. J. L. Jr., A. Saitoh, Y. Kurata, T. Inokuma, S. Hasegawa, “Stability of the Dielectric Properties of PECVD Deposited Carbon-Doped SiOF Films”, Thin Solid Films 337, 67 (1999).
28. K. Endo, T. Tatsumi, “Fluorinated Amorphous Carbon Thin Films Grown by Helicon Plasma Enhanced Chemical Vapor Deposition for Low Dielectric Constant Interlayer Dielectrics “, Appl. Phys. Lett. 68, 2864 (1996).
29. K. Endo, K. Shinoda, T. Tatsumi, “Plasma Deposition of Low-Dielectric-Constant Fluorinated Amorphous Carbon”, J. Appl. Phys. 86, 2739 (1999).
30. T. Shirafuji, Y. Miyazaki, Y. Hayashi, S. Nishino, “PE-CVD of Fluorocarbon/SiO Composite Thin Film Using C4F8 and HMDSO”, Plasmas and Polymers 4, 57 (1999).
31. T. Shirafuji, Y. Miyazaki,Y. Nakagami, Y. Hayashi, S. Nishino, “Plasma Copolymerization of Tetrafluoroethylene/Hexamethyldisiloxane and In Situ Fourier Transform Infrared Spectroscopy of Its Gas Phase”, Jpn. J. Appl. Phys. 38, 4520 (1999).
32. J. Y. Kim, M. S. Hwang, Y. H. Kim, H. J. Kim, “Origin of Low Dielectric Constant of Carbon-Incorporated Silicon Oxide Film Deposited by Plasma Enhanced Chemical Vapor Deposition”, J. Appl. Phys. 90, 2469 (2001).
33. A. Grill, V. Patel, “Low Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane”, J. Appl. Phys. 85, 3314 (1999).
34. A. Nara, H. Itoh, “Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2, Jpn. J. Appl. Phys. 36, 1477 (1997).
35. A. Grill, V. Patel, “Low Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane”, J. Appl. Phys. 85, 3314 (1999).
36. L. M. Han, J. S. Pan, S. M. Chen, N. Balasubramanian, J. Shi, L. S. Wong, P.D. Foo, “Characterization of Carbon-Doped SiO2 Low k Thin Films: Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane”, J. Electrochem. Soc. 148, F148 (2001).
37. S. Sugahara, T. Kadoya, K. I. Usami, T. Hattori, M. Matsumura, “Preparation and Characterization of Low-k Silica Film Incorporated with Methylene Groups”, J. Electrochem. Soc. 148, F120 (2001).
38. S. Sugahara, K. I. Usami, M. Matsumura, “A proposed Organic-Silica Film for Inter-Metal-Dielectric Application”, Jpn. J. Appl. Phys., 38, 1428 (1999).
40. S. Nguyen, D. Dobuzinsky, D. Harmon, R. Gleason, S. Fridmann, “ Reaction Mechanism of Plasma- and Thermal-Assited Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films”, J. Electrochem. Soc. 137, 2290 (1990).
41. J. M. Park, S. W. Rhee, “Remote Plasma-Enhanced Chemical Vapor Deposition of Nanoporous Low-Dielectric Constant SiCOH Films Using Vinyltrimethylsilane”, J. Electrochem. Soc. 149, F92 (2002).
42. J. K. Hong, H. S. Yang, M. H. Jo, H. H. Park, S. Y. Choi, “Preparation and Characterization of Porous Silica Xerogel Film for Low Dielectric Application”, Thin Solid Films 308-309, 495 (1997).
43. J. K. Hong, H. R. Kim, H. H. Park, “The Effect of Sol Viscosity on the Sol-Gel Derived Low Density SiO2 Xerogel Film for Intermetal Dielectric Application”, Thin Solid Films 332, 449 (1998).
44. J. H. Kim, H. R. Kim, H. H. Park, S. H. Hyun, “Aging Effect of SiO2 Xerogel Film on Its Microstructure and Dielectric Properties”, Appl. Surf. Sci. 169-170, 452 (2001).
45. K. Teshima, Y. Inoue, H. Sugimura, O. Takai, “ Transparent Silica Films Deposited by Low-Temperature Plasma-Enhanced CVD Using Hexamethyldisiloxane”, Chem. Vap. Deposition 8, 251 (2002).
46. S. Nguyen, D. Dobuzinsky, D. Harmon, R. Gleason, S. Fridmann, “ Reaction Mechanism of Plasma- and Thermal-Assited Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films”, J. Electrochem. Soc. 137, 2290 (1990).
47. D. S. Kim, Y. H. Lee, N. H. Park, “Deposition of Thermally Stable, Low Dielectric Constant Fluorocarbon/SiO2 Composite Film”, Appl. Phys. Lett. 69, 2776 (1996).
48. R. d’Agostino, “Plasma Deposition, Treatment, and Etching of Polymers”, Academic Press (1990).
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