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研究生:郭家豪
論文名稱:矽基發光與接收元件設計
論文名稱(外文):The design of si-based light emission and receiving devices
指導教授:劉政光劉政光引用關係
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:103
中文關鍵詞:矽基發光元件光接收特性轉阻抗放大器金氧矽穿隧元件
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本論文探討三個不同的主題,一為矽基發光元件,一為發光元件的光接收特性,另一個是轉阻抗放大器(Transimpedance Amplifier, TIA)特性的探討。
第一部份探討矽基發光元件,利用金氧矽穿隧元件來產生發光,並使用N-well以防止晶片表面的電子電洞復合,以提昇發光的效率,其最佳發光功率對電流比值△P/△I為 。
第二部份為利用我們所設計的金氧矽穿隧元件來反向操作,並觀察其作為光偵測器的特性,可量測到最小的光強度約為0.15uW。
第三部分為轉阻抗放大器,將由光偵測器接收下來的光電流轉換為電壓輸出,其增益約為69dBΩ。
以上共涵蓋三大主題,均有同一的特色就是均採用以矽為材料,並以CMOS來實現,本論文著重於以矽為基底,再進一步去設計,有利於光互連與光電積體電路的開發。
This thesis studies three topics:the Si-based light emission device, the light receiving device, and the transimpedance amplifier.
First, the Si-based light emission devices is described, we make use of metal-oxide-silicon tunneling device, (MOSTD) to emit light. In order to prevent electron-hole pairs recombination on the surface of chip, we use N-well to improve the topology of light emission. The best light emission efficiency (△P/△I) is .
Second, we study the MOSTD in reverse bias, and investigate its application to light detection. The smallest light intensity which can be measured is 0.15uW.
The last, the transimpedance amplifier is studied, which is used to transform photocurrent to photovoltage. The gain is about 69dBΩ.
In the topics mentioned above, they have the same characteristic in the use of material, the silicon, and are realized by the CMOS process. It can be applied to the design of opto-electronic ICs and optical interconnections.
目 錄
中 文 摘 要…. I
英 文 摘 要…. II
誌 謝…. III
圖 表 索 引.. VII
第一章 緒論.. 1
1-1前言 1
1-2動機與目的 1
1-3內容大綱 4
第二章 矽發光晶片發光機制研究 7
2-1光通訊與訊號的傳遞 7
2-2矽基發光的發展 10
2-3光互連(optical interconnections)之發展 15
2-4發光與偵測元件基本理論 16
2-4-1 PN二極體 16
2-4-2金氧矽發光元件 18
2-5矽發光之應用例 23
第三章 矽發光晶片實作 24
3-1晶片設計原則 24
3-2晶片設計架構 25
3-3矽發光測試方法 30
3-4矽發光晶片量測結果 33
3-4-1順偏量測 33
3-4-2反偏量測 41
3-5討論與結論 47
第四章 光接收元件 52
4-1簡介 52
4-2光電轉換基本原理 53
4-2-1光偵測器(PD)之分析: 53
4-2-2前置放大器之分析 56
4-3轉阻抗放大器實作 60
4-3-1設計流程 60
4-3-2 TIA電路分析 60
4-3-3 TIA電路實作 64
4-4雜訊分析 68
4-5實際量測 71
4-5-1 TIA測試方法 71
4-5-2 TIA量測結果 72
4-5-3金氧矽元件光偵測量測 77
4-5-4金氧矽元件光偵測量測結果 79
4-5-5討論 83
第五章 結論… 84
5-1 研究重點與討論 84
5-2未來研究方向 85
參 考 文 獻……. 86
作 者 簡 介……. 92
參考文獻
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