本論文主要探討硼碳氮薄膜(boron carbon nitride thin films)在不同成長條件下光電性質與鍵結選擇性的變化。利用反應式雙槍磁控濺鍍系統(dual gun magnetron sputtering systems) 成長硼碳氮薄膜，並採用碳化硼(B4C)與石墨(Graphite)二種材料作為靶材，通入氬氣(Argon)和氮氣(Nitrogen)二種混合氣體， 使用p-type(100)矽(silicon)及石英(quartz)兩種材料作為基板的選擇。
本實驗藉調變靶材功率來改變硼碳氮薄膜成份比例的分布，並以SEM分析薄膜表面、截面形態。從SEM的影像可以看到，成長溫度的變化使得硼碳氮膜成長方向由垂直於基板轉變為與基板近似平行的方向，而氬氣的加入將提高成長速率並使得微結構變得更無次序(disorder)。成份定性與定量的分析則使用EDX與X光光電子能譜儀(XPS)作為鑑定的方法。
在鍵結分析方面，以X光光電子能譜儀與傅立葉紅外線光譜儀(FTIR)的結果可以發現B-N、B-C、C-C、C=N、C≣N和C=O等鍵結硼碳氮薄膜之中都會出現，而成長溫度的改變將使C≣N逐漸減少; 在通入非常低流量的氮氣時，B-N很容易被形成; 石墨靶材瓦數的增加發現C-C和C=C的增加。
在光學性質上利用膜厚儀得到折射率(n)與消散係數(k)，波長範圍為400nm~900nm，硼碳氮薄膜的折射率在2.2~1.8之間，隨著溫度升高折射率亦隨之提高，當氮氣流量的增加也會有折射率變高的趨勢，碳含量與消散係數(k)有正比的關係，穿透率亦隨之下降。
將薄膜成長於單晶石英基板上並以 Keithley 6487量測薄膜於不同溫度下電性的變化，並得知材料在不同碳量時內質導電率(intrinsic conductivity)與活化能(activation energy)的關係，實驗結果發現碳含量的提高有助於導電率的提升，此與C=C π鍵的增加有正比的關係。

Abstract
Amorphous Boron carbon nitride (a-BCN) films were synthesized by dual-cathode magnetron sputtering gun from laminated targets of B4C and graphite. RF power supplies were used to sputter the B4C and graphite targets in presence of N2 gas. The films were deposited on single crystalline silicon substrates p-type (100) under different deposition conditions. The relative compositions of B、C and N in the films were controlled by adjusting the powers to the respective targets and N2 flow rate under different deposition temperature.
The surface morphology of the films was studied by Scanning Electron Microscopy (SEM). Generally the film had a typically columnar growth structure ; which change to a layered structure as the deposition temperature is increased .The film thickness of as measured by cross section SEM was found to be in the range of 0.202um ~ 1.041um. Composition in the films was studied by Energy dispersive analysis of X-ray (EDAX) and X-ray photoelectron spectroscopy (XPS). The films with various carbon contents were obtained by varying the RF (radio frequency, 13.65MHz) of the graphite target.
Bonding affinity was studied by Fourier-transform infra-red (FTIR) spectrometer and X-ray photoelectron spectroscopy (XPS). It was found that B-N, B-C, C-N, C=N, C≣N and C=O bonds exits in films, B-N bond easily dominates at low flow rate of nitrogen.
Refractive index and extinction coefficient of the films were measured by the thin films thickness measurement system. The refractive index of the films ranged 2.2~1.8 under visible light.
Intrinsic conductivity was studied by Keithley pico-amp meter, including cryostat control system to measure conductivity and activation energy

目錄
中文摘要.............................................I
英文摘要.............................................II
目錄.................................................III
表目錄...............................................V
圖目錄...............................................VI
誌謝................................................ X
第一章 導論..........................................1
第二章 文獻回顧......................................2
2.1薄膜合成的方法....................................2
2.2硼碳氮三元化合物與BC2N晶體........................3
2.3 研究動機.........................................5
第三章 實驗步驟與儀器分析...........................6
3.1 雙靶磁控濺鍍系統.................................6
3.2 鍍膜步驟.........................................8
3.2.1 基板前處理.....................................8
3.2.2 濺鍍程序.......................................9
3.2.3 實驗設計與參數................................10
3.2 分析量測........................................12
3.2.1 掃瞄式電子顯微(SEM)...........................12
3.2.2 光電子能譜儀(XPS，ESCA).......................12
3.2.3 傅立葉紅外線光譜(FTIR)........................13
3.2.4 穿透率量測(spectrophotometer: UV-Visible transmittance).13
3.2.5 光學測膜儀(Thin film thickness measurement )..14
3.2.6 電性量測......................................15
第四章 結果與討論...................................17
4.1 非晶相硼碳氮薄膜材料分析........................17
4.1.1 薄膜的表面形貌................................17
4.1.2 薄膜的成份分析................................22
4.1.3 薄膜的鍵結分析................................28
4.2 非晶相硼碳氮薄膜的光電性質分析..................48
4.2.1 光學性質......................................48
4.2.2電學性質.......................................56
第五章 結論.........................................59
參考資料.............................................61

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