臺灣博碩士論文加值系統

本論文的目的是要成長奈米碳管(carbon nanotubes)膜於三極式場發射元件，我們成功以ICP RIE乾蝕刻鉬和二氧化矽層，然後在Mo/SiO2/Si之三極式元件內成長奈米碳管並量測其場發射特性。
閘極提供了較均勻的有效電場，幾乎每一像素都有電子束打螢光粉。一般的情況下大多數的電子在三極式場發射元件實驗時，會被閘極偏向吸收，三極式奈米碳管場發射元件的閘極電壓由0 增到15 V，其起始電場可由三極式測試條件下的7.55降到 5.83 V/μm，但是當電壓增到20 V,其起始電場增加到 6.64 V/μm。
此外，氫電漿後處理能夠有效改善奈米碳管場發射的特性。將三極式奈米碳管場發射元件經由氫電漿蝕刻，測定場發射的閘極電壓由0增到15 V，其起始電場降到3.2 ~ 4.63 V/μm 之間。

The main purpose of this thesis is to grow carbon nanotubes on a field emission triode type device. Molybdenum and SiO2 pattern were etched by inductively coupled plasma (ICP) reactive ion etching (RIE) system，Follow by carbon nanotubes deposited into the Mo/ SiO2/Si triode type device. The field emission properties were then characterized.

Gate voltage provided effective high electric field almost every pixel provide electron beam to the phosphor. In general, most of electrons are deflected to the gate in triode mode operation. The turn on field of carbon nanotubes field emission triodes decreased from 7.55 to 5.83 V/μm when the gate voltage increased from 0 to 15 V. But turn on field increased up to 6.64 V/μm when applying the gate voltage over 20V.

In addition, hydrogen plasma process can improve the field electron emission properties of the carbon nanotubes. The field electron emission properties of the triode carbon nanotube device has been improved by hydrogen plasma post-treatment. The turn on field of carbon nanotubes field emission triodes decreased from 4.63 to 3.2 V/μm when the gate voltage increased from 0 to 15 V.

Abstract (Chinese) ……………………………………………………Ⅰ
Abstract (English) ……………………………………………………Ⅱ
Contents ………………………………………………………………Ⅳ
List of Tables …………………………………………………………Ⅵ
List of Figures ………………………………………………………Ⅶ
Chapter 1. Introduction ………………………………………………1
1-1. Overview ……………………………………………………1
1-2. Theory …………………………………………………………4
1-2.1. Thermionic Emission Theory ……………………………4
1-2.2 Field Emission Theories …………………………………5
1-3 Dry Etching ……………………………………………………8
1-3.1 Inductive Coupled Plasma (ICP) …………………………8
1-3.2 Reactive Ion Etching (RIE) ………………………………9
Chapter 2. Experiments ……………………………………………18
2-1. Mo Layer Evaporation ………………………………………18
2-2. Photolithography ……………………………………………19
2-3. Inductive Coupled Plasma (ICP) Reactive Ion Etching ……20
2-4. Ion-Beam Sputtering Deposition (IBSD) ……………………21
2-5. Microwave Plasma Enhanced Chemical Vapor Deposition (MPCVD) ……………22
2-6. Fabrication of Triodes Field Emission Carbon Nanotubes …23
2-7. Raman Spectra ………………………………………………24
2-8. Scanning Electron Microscopy (SEM) System ……………24
2-9. Field Emission Measurement System ………………………25
Chapter 3. Results and Discussion …………………………………36
3-1. Fabrication and Characterization of Field Emission Triodes ………………36
3-2. Improved Field Emission Properties of Triode-Type Carbon Nanotube Field Emission Arrays by Hydrogen Plasma process ……………………………39
Chapter 4. Conclusion ………………………………………………60
Refence ………………………………………………………………61

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