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研究生:謝怡靜
研究生(外文):Yi-Jing Hsieh
論文名稱:磷化銦鎵/砷化鎵異質接面雙極性電晶體基材寄生電流之研究
論文名稱(外文):STUDY OF SUBSTRATE CURRENT IN InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS
指導教授:張彥華
學位類別:碩士
校院名稱:國立雲林科技大學
系所名稱:電子與資訊工程研究所碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:73
中文關鍵詞:基板電流異質接面雙極性電晶體
外文關鍵詞:substrate currentheterojunction bipolar transistors
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InGaP/GaAs異質接面電晶體擁有優越高速表現和微波應用,部分歸於在基板上的寄生部分,這半絕緣GaAs基板減少寄生效應並且通常被考慮成非導體,因此,基板漏電流很少被研讀,並且在大多數元件模型裡寄生電流往往忽略。在我們量測中發現,Ic和Ib電流會隨著基板的偏壓變化,意指在基板中呈現電流的進行。故本篇論文將介紹基板電流在InGaP/GaAs HBT裡的現象。
基板電流的組成將藉由二維空間模擬軟體Medici來模擬研讀,使用模擬軟體可計算元件中能帶圖、電場、電位及載子濃度分布,對於分析元件物理機制有很大的幫助,並推導載子傳輸機制加以驗證。另外,為了研讀substrate-subcollector接面特性,說明基板的漏電流,採用高頻電路設計軟體ADS,以VBIC模型提供一個等效電路來正確地預測低階電流,並針對VBIC model內寄生電晶體的部分其與溫度的關係,再加入一些電阻與二極體,以達到正確的模擬結果。
InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit excellent performance in high-speed and microwave applications. The semi-insulating GaAs substrate significantly reduces parasitic effects, and is usually considered non-conducting. Therefore, GaAs substrate leakage current is rarely studied, and parasitic current paths are usually neglected in most device models. In our measurement, however, we found that the base and collector current vary with substrate bias.
In this thesis, current transport mechanism in substrate is investigated with measurement and Medici simulation. In particular, characteristics in the substrate-subcollector junction are studied. The effect of substrate thickness will be discussed. To account for the substrate leakage current, we proposed a modification of VBIC model to predict the effect on collector current. Circuit simulation with performed with ADS.
中文摘要…………………………………………………………...i
英文摘要…………………………………………………………...ii
誌謝...………………………………………………………………iii
目錄………………………………………………………………...iv
表目錄……………………………………………………………...vi
圖目錄……………………………………………………………...vii
第一章 簡介………………………………………………………1
第二章 二維空間模擬軟體-Medici之介紹……………………4
2.1 模擬軟體簡介………………………………………… 4
2.2 TMA MEDICI內建電流計算及模擬………………………5
2.2.1物理模型……………………………………………5
2.2.2基本的電流電壓模型………………………………6
2.2.3複合模型 (recombination model)………………8
2.2.4遷移率模型(mobility model)……………………9
2.2.5邊界條件(Boundary Conditions)………………10
2.2.6數值方法(Numerical Method)……………………11
第三章 InGaP/GaAs HBT之元件結構……………………………13
3.1 InGaP及GaAs之物理參數………………………………13
3.2元件架構…………………………………………………15
3.3元件模擬………………………………………………...18
第四章 InGaP/GaAs HBT基板電流傳輸機制……………………20
4.1前言………………………………………………………20
4.2基板偏壓(Vs)對Gmmel plot電流的影響………………20
4.3載子分佈…………………………………………………25
4.4理論性的載子傳輸機制…………………………………29
4.4.1 Subcollector/Substrate間的電流傳輸…………29
4.4.2 Substrate-Subcollector接面電流形式…………31
4.4.3載子傳輸機制的推導……………………………...36
第五章 基材寄生電流與溫度關係之VBIC model建立…………39
5.1 SGP model介紹…………………………………………39
5.2 VBIC model等效電路介紹………………………………40
5.3基板寄生電流之建立…………………………………… 47
5.4基材寄生電流與溫度變化之關係………………………51
5.4.1 VBIC model相關溫度參數…………………………51
5.4.2寄生基材電阻………………………………………54
5.5寄生電晶體之電流模型…………………………………55
5.5.1寄生電晶體模型……………………………………55
5.5.2寄生Gmmel plot及VBIC model模型修正………57
第六章 結論………………………………………………………65
參考文獻…………………………………………………………...66
自傳 ………………………………………………………………70
附錄A(Medici程式) ……………………………………………71
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[2] D.Ankri, et al.,1982, “Diffused epitaxial GaAlAs/GaAs heterjunction
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[5] MEDICI Manual,Technology Modeling Associates, Inc.,Palo Alto, CA,1996.
[6] Handbook of III-V heterojunction bipolar transistors, p321
[7] Juin.J. Liou, Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors, Artech House, Norwood, Chap.5,pp.133-148.
[8] Robert Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory,6th ed., pp18~22
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[10] Donald A.Neamen, Semiconductor Physics & Devices, The McGraw-Hill Companies,Inc.Chap.4
[11] H. K. Gummel, and H. C. Poon, “An integrated charge control model of bipolar transistors”, Bell Syst. Tech. J., 1970, 49, pp. 827-852.
[12] C. C. McAndrew, J. A. Seitchik, D. F. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. J. Roulston, M. Schroter, P. V. Wijnen, and L. F. Wagner, “VBIC95, The Vertical Biploar Inter-Company Model”, IEEE J. Solid-State Circuits, 1996, 31, pp. 1476-1483.
[13] Xiaochong Cao; Mcmacken, J.; Stiles, K.; Layman, P.; Liou, J.J.;Oritz-Conde, A.; Moinian, S.;“Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models Electron Devices,”IEEE Transactions on , Volume: 47 Issue: 2 , Feb 2000
[14] Tutt, M.;“GaAs based HBT large signal modeling using VBIC for linear power amplifier applications,”Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000 , 2000
[15] Cao, X.; McMacken, J.; Stiles, K.; Layman, P.; Liou, J.J.; Sun, A.; Moinian, S.;“Parameter extraction and optimization for new industry standard VBIC model,”Advanced SemiconductorDevices and Microsystems, 1998. ASDAM ''''98. Second International Conference on 5-7 Oct 1998
[16] Huang, G.W.; Chen, K.M.; Kuan, J.F.; Deng, Y.M.; Wen, S.Y.; Chiu, D.Y.; Wang, M.T.;“Silicon BJT modeling using VBIC model,”Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific , Volume: 1 , 2001
[17] Cherepko, S.V.; Hwang, J.C.M.;“VBIC model applicability and extraction procedure for InGap/GaAs HBT,”Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific , 2001
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Circuits and Devices Magazine , Volume: 12 Issue: 2 , Mar 1996
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[20] Peter M.Asbeck;Frank Mau-Chang;Ken-Chung Wang;Gerard J Sullivan and Derek T.Cheung, “GaAs-Based Heterojunction Bipolar Transistors for Very High Performance Electronic Circits”, IEEE,Vol 81,NO. 12,December 1993
[21] 陳駿毅,2003, VBIC 等效模型對異質接面雙載子電晶體之研究,國立雲林科技大學,碩士論文
[22] C.C.McAndrew, “A Complete and Consistent Electrical/Thermal HBT Model”, IEEE Bipolar Circuits and Technology Meeting, 1992, pp.200-203.
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