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研究生:張博淳
研究生(外文):Po-chun Chang
論文名稱:VBIC應用於異質接面雙載子電晶體之最佳化過程
論文名稱(外文):Optimization of VBIC Model Applied to Heterojunction Bipolar Transistors
指導教授:張彥華
指導教授(外文):Yang-hua Chang
學位類別:碩士
校院名稱:國立雲林科技大學
系所名稱:電子與資訊工程研究所碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:195
中文關鍵詞:異質接面雙載子電晶體最佳化過程
外文關鍵詞:HBToptimizationVBIC
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本論文主要是探討 VBIC 模型應用於 HBT 之最佳化過程,希望能有效提升 HBT 元件模型最佳化過程的效率又不失其準確性;由於元件模型在電路設計時扮演著很重要的角色,除了可以讓設計者直接由模型參數中了解元件的特性,也有助於製作者對元件做製程上的修改,所以萃取模型參數對於設計或製程都是不可或缺的一環,而如何萃取出精確的參數以及最佳化是目前相當重要的課題之一,本論文便是參考一般 HBT 的物理特性,將其應用在最佳化過程之中,並針對多種不同的 HBT 元件模型進行模擬,用以證明最佳化過程的準確性,最後再討論經完整最佳化過程後模型的適用程度。
This thesis focuses on the optimal parameter extraction procedure of VBIC model applied to HBTs. Base on this process; users would optimize the VBIC model of HBTs efficiently and exactly. An accurate model is very important for IC design. IC designers will directly learn device characteristics out from these parameters of model. Besides, manufacturers can improve process steps by these parameters. The device model is useful to designers and manufacturers, so how to extract and optimize the parameters are valuable. This thesis proposes an optimal procedure of the VBIC model by according to HBT characteristics. In the procedure, each step is validated by ADS simulation on different HBTs. Finally, the VBIC model will be discussed after the optimization.
第一章 簡介
1.1 研究動機
1.2 論文綱要
第二章 異質接面雙載子電晶體之物理特性
2.1 異質接面雙載子電晶體的基本特性與能帶說明
2.1.1 基本特性
2.1.2 能帶說明
2.2 異質接面雙載子電晶體之直流分析
2.2.1 工作原理
2.2.2 電流分析
2.3 異質接面雙載子電晶體的非理想特性
2.3.1 電流增益下降的成因
2.3.2 射極群聚現象
第三章 VBIC 模型的基本架構及其特性
3.1 VBIC 模型的基本架構及參數意義
3.2 VBIC 模型之參數萃取
3.2.1 電流參數萃取
3.2.2 寄生電阻參數萃取
3.2.3 空乏電容參數萃取
3.2.4 其他參數萃取
3.3 VBIC 模型與 SGP 模型的參數轉換
第四章 異質接面雙載子電晶體之VBIC 模型最佳化過程
4.1 VBIC 模型之最佳化過程
4.1.1 最佳化過程一
4.1.2 最佳化過程二
4.1.3 最佳化過程三
4.1.4 最佳化過程四
4.1.5 最佳化過程五
4.2 最佳化過程的適用性
第五章 結論
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