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研究生:陳祥豪
研究生(外文):Hsiang-Hao Chen
論文名稱:填充微米級導孔與通孔用之新穎電鍍銅配方研究
論文名稱(外文):A Novel Copper Electroplating Formula for Laser-Drilled Microvia and Through Hole Filling
指導教授:竇維平
指導教授(外文):Wei-Ping Dow
學位類別:碩士
校院名稱:國立雲林科技大學
系所名稱:工業化學與災害防治研究所
學門:工程學門
學類:化學工程學類
論文種類:學術論文
畢業學年度:92
語文別:中文
論文頁數:142
中文關鍵詞:電鍍添加劑
外文關鍵詞:copperelectroplatingadditive
相關次數:
  • 被引用被引用:2
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填充微米導孔與通孔之電鍍添加劑配方研究
學生 : 陳祥豪 指導教授 : 竇維平 博士
國立雲林科技大學化學工程學系碩士班

摘要
隨著電子產品要求尺寸愈來愈小,功能愈來愈多的情況下,利用電化學電鍍沉積的方式,應用在IC、IC基板、PCB的導孔與導線填充,已是未來的趨勢。
本篇論文主要觀察空氣擾動、電流在導孔內外的分佈、其它添加劑和平整劑的交互作用,來探究平整劑在電鍍銅填充行為中所扮演的角色。藉由電鍍切片、循環伏安法、定電壓實驗的結果,提出電場-擴散-吸附-消耗電鍍銅填充模組(Electric Field-Diffusion-Adsorption-Consumption copper plating filling model),來解釋孔底上移的機制。
另外,利用電子顯微鏡(SEM)和能量散佈光譜分析(EDS)發現,某些特定的平整劑會與銅面產生錯合物薄膜(Leveler-Cu complex thin film),類似聚合型抑制劑(polymer suppressor)的行為,在銅面上形成緻密的阻障層(Barrier layer),抑制銅沉積速度。
吾人利用這些概念,將傳統複雜的多添加劑配方,以單一添加劑配方來取代。而此單一添加劑配方不但可以應用在電鍍銅填充盲孔上,還能進一步的在通孔與線路的電鍍銅填充製程。
A Novel Copper Electroplating Formula for Laser-Drilled Microvia and Through Hole Filling
Student : Hsiang-Hao Chen Advisor : Wei-Ping Dow, Ph.D.
Department of Chemical Engineering
National Yunlin University of Science & Techology

ABSTRACT
As the electronics products become smaller and smaller and more and more functional, electrodeposition has become the trend to fill the via holes and wires of IC chips, IC substrates, printed circuit boards (PCBs).
This major topic of this thesis is to explore the roles of levelers in the filling plating depending on the effect of air agitation, current distribution around the feature profile, and on the interaction between other organic additives and the levelers. Based on the analyses of plating cross-section, cyclic voltammetry, and potentiostat experiments, the roles of these levelers acting in the filling plating are characterized. Accordingly, we propose a model of electric field- diffusion- adsorption- consumption to explain the Superfilling behavior in the copper plating. According to the examinations of scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), specific leveler is conformed to adsorb on and, even bond to the copper surface to form a complex thin film. This thin film strongly inhibits the copper deposition rate, which is like the inhibiting behavior of polymer suppressor.
According to these ideas as mentioned above, we develop a novel formula only with single additive to replace the traditional formula that is composed of multi-additives. The novel formula can be not only applied for microvia filling, but also for through-hole and pattern filling by copper plating.
目 錄

中文摘要 Ⅰ
英文摘要 Ⅱ
誌謝 Ⅲ
目錄 Ⅳ
圖目錄 Ⅶ
表目錄 Ⅹ
第一章、 緒論 1
第二章、 理論與文獻回顧 4
2-1 電子封裝技術的演進 4
2-2 電化學電鍍法 7
2-2-1 電鍍有機添加劑介紹 8
2-2-2 加速劑 11
2-2-3 抑制劑 14
2-2-4 平整劑 20
2-3 電鍍銅填充模擬理論 30
2-3-1 多添加劑系統 30
2-3-2 單一添加劑系統 36
2-4 電化學基本理論 30
2-4-1 極化作用的成因 39
2-4-2 活性極化 39
2-4-3 濃度極化 41
2-4-4 電阻極化 42
第三章、 研究動機 43
第四章、 實驗儀器與藥品 45
4-1 實驗儀器 45
4-2 實驗藥品 51
第五章、 研究流程與實驗步驟 52
5-1 研究流程 52
5-2 實驗步驟 53
5-2-1哈林槽電鍍實驗 53
5-2-2循環伏安和定電壓測量實驗 56
第六章、 實驗結果與討論 58
6-1 三添加劑填孔配 58
6-2 四添加劑填孔配方 60
6-3 加速劑、聚合型抑制劑與平整劑的交互作用 72
6-4 銅沉積階段成長觀察實驗 79
6-5 電場效應對電鍍填孔的影響 90
6-6 利用平整劑來取代傳統聚合物型抑制劑 95
6-7 單一添加劑填孔配方的研究 100
6-8 平整劑與銅層錯合物薄膜的形成 105
6-9 電鍍填充通孔實驗 124
6-10 線路電鍍填充 128
6-11 加速劑對於電鍍銅填充的研究 132
第七章、 結論 136
文獻回顧 139
文獻回顧
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