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研究生:連偉傑
研究生(外文):LIEN WEI CHIEH
論文名稱:利用TiN作為成長於矽基板之發光二極體的緩衝層及反射鏡面
論文名稱(外文):Using TiN as Buffer Layer and Reflective Mirror of LEDs on Silicon Substrate
指導教授:張本秀陳乃權
學位類別:碩士
校院名稱:長庚大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2005
畢業學年度:93
語文別:中文
論文頁數:58
中文關鍵詞:氮化鈦氮化鎵緩衝層
外文關鍵詞:TiNGaNbuffer layer
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從有機金屬化學氣相磊晶(MOCVD)技術的快速發展,即被普遍地應用各種材料的磊晶生長,並獲得優良的結晶品質。近年來,化合物半導體的研究發展及應用更是受到各界的矚目,也是當前國家所要全力推動的重點科技項目之一。其中以大量應用在顯示器、照明、交通號號誌等方面之氮化鎵發光二極體(GaN light emitting diode)為大家所熟知,其發出的光波段則介於可見光區中的藍~藍綠光區。
本文採取AlGaInN發光二極體做為試片,目的在於提供一種解決二極體光在長波長時被矽基板吸收的問題;以及解決氮化鎵與矽基板間晶格匹配的問題。透過氮化鈦緩衝層的高導電性所致之反射能力,提升於其上磊晶成長三五族AlGaInN氮化合物光電元件之效能;另一方面氮化鈦(TiN)在氮化鎵與矽基板間扮演良好晶格匹配的角色。
Since the technique of metal organic chemical vapor deposition(MOCVD) was quickly developed, was also applied generally to deposit crystal and obtained good crystal quality. Recently, the research and application of chemical composition semiconductor is more look at attentively and is also one of the focal point technique events that country advance spare no effort. Among them, AlGaInN light emitting diode applied on large scale in communicationֽilluminationֽtraffic etc is to know very well , its luminescence wavelength is red to yellow-green between visible optical spectra.
In this thesis, we choice AlGaInN light emitting diodes as samples to solve the problem that silicon substrate absorb light, and to solve the problem that GaN and silicon substrate are lattice mismatch . using TiN as buffer layer and the manufacturing method thereof, in which the TiN buffer layer has a high reflection ability so that can improve the efficiency of the Ⅲ-Ⅴ AlGaInN nitride opti-electrical devices. On the other handֽTiN act good role that lattice match among GaN and silicon substrate .
摘要.....................................................Ⅰ
Abstrat.................................................. Ⅱ
目錄.....................................................Ⅲ
圖目錄.................................................. Ⅴ
表目錄...................................................Ⅶ
第一章 導論...........................................1
1-1 本研究之目的.........................................1
1-2 TiN薄膜特性.........................................1
第二章 理論基礎..........................................7
2-1 發光二極體之發光效率.................................7
2-2 晶格匹配理論.........................................9
2-3 利用阻抗來計算反射率...............................10
2-4 量測實驗原理........................................12
2.4.1 光激螢光光譜.....................................12
2.4.2 X-ray繞射之相關理論..............................13
2.4.3 電致螢光光譜.....................................16
第三章 實驗方法及步驟....................................18
3-1 TiN薄膜製程簡要流程................................18
3-2 反射率量測與模擬....................................19
3-3磊晶成長..............................................19
3-4 LED製程.............................................20
第四章 實驗結果與分析...................................23
4-1 反射率量測與模擬結果分析.............................23
4-2 XRD量測.............................................24
4-3 SEM及EDS量測.......................................24
4-4 PL量測...............................................25
4-5 I-V量測.............................................. 26
4-6 EL及LOP量測........................................26
第五章 結論.............................................28
參考文獻.................................................58
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[2] H. Jiang, K. Tao, and H. Li, “ Structure of TiNx (0[3] L.Royer: Ann.Phys.,23(1935)16.
[4] J.H.van der Merwe:J Appl.Phys.34(1963)117
[5] J.H.van der Merwe:J Appl.Phys.34(1963)123
[6]David M. Pozar “Microwave Engineering” CH1
[7]Dieter K. Schroder, "Semiconductor Material and Device Characterization ", 623 (1998)
[8]A. Guinier, X-ray Diffraction, San Francisco, W. H. Freeman and Company, p.238-241, 1963.
[9]許樹恩, 吳泰伯, X光繞射原理與材料結構分析(修訂版),中國材料協會,p.188-193, 1993.
[10]Bede Scientific, Reference Guide, England, Bede Scientific Instruments,p.21-22, 1997.
[11]H. Heinke, V. Kirchner, S. Einfeldt and D. Hommel, “X-ray diffraction analysis on the defect structure in epitaxial GaN”, Appl. Phys. Lett., 77, p.2145-2147, 2000.
[12]J. Chaudhuri, M. H. Ng, D. D. Kolesle, A. E. Wickenden and R. L. Henry,“High resolution X-ray diffraction and X-ray topography study of GaN on sapphire”, Materials Science and Engineering, B64, p.99-106, 1999.
[13] Electro-luminescence,J.I.Pankove 1977
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