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研究生:張榮峰
研究生(外文):Roy Chang
論文名稱:以碳離子植入於矽中來抑制硼離子暫態加速擴散
論文名稱(外文):Suppression of Boron transient enhanced diffusion in Silicon by Carbon implant
指導教授:林正平林正平引用關係
學位類別:碩士
校院名稱:長庚大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2005
畢業學年度:93
語文別:英文
論文頁數:48
中文關鍵詞:碳離子硼離子暫態加速擴散
外文關鍵詞:carbonborontransient enhanced diffusion
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In shallow junction transistors with boron-doped channels, transient enhanced diffusion(TED) is a key contributor to boron profile broadening. The role of carbon in silicon as a sink for self-interstitials, I have explored the feasibility of using carbon in the active region to retard boron diffusion during high thermal process.
A highly effective suppression of TED of boron was observeeed providing more than an order of magnitude reduction in boron diffusivity. MOSFET’s with carbon and boron implanted channels have been fabricated to evaluate the impact of carbon on the electrical properties of Si. Boron diffusion, activation, and critical electrical parameters including subthreshold swing, threshold voltage, off-state leakage current, and channel mobility have been evaluated as a function of the carbon dose.
Base on secondary ion mass spectrometry(SIMS) results, boron diffusivity is obviously reduced by carbon ion implantation. Diffusion Length is also decreased in our observation. However higher junction leakage current and contact resistance need to be concerned in this work..
Table of Contents
致謝(中文)……………………………………….………………………i
Abstracts………………………………………………………..…...…ii
Catalogue……………………….…………...………..………………….iii
List of tables and figures……………………….…………...………..…...v


Chapter 1
Introduction ……………….…………….……………….…1
1.1 Motivation ……………………………………………...….……..1
1.2 The impact of crystal defect on dopant diffusion…….................5
1.2.1 Ion Implantation Damage…….................................................6
1.2.2 Recombination…….................................................................8
1.2.3 Self-interstitial..…...................................................................8
1.2.4 {311} Defect Evolution..........................................................10
1.2.5 End of range(EOR) damage………………………………..12
1.3 Carbon as Impurity Implantation source ………………….….…13
1.3.1 Self-interstitial trapping in C layer …….…………….……...14
1.3.2 The forming of CI CS………………………………………...15

Chapter 2
Experimentals………………….…..………………………18
2.1 SIMS Sample preparation………………………………………..18
2.2 PMOSFET fabrication……………………….……......................20
2.3 Rapid Thermal Processing…..……………………………..…….22
2.4 SIMS analysis techniques …..………………………..………….23
Chapter 3
Results and Discussion ………………………………..….. 25
3.1 Carbon SIMS data at Experiment (C,B co-implant)……..……...25
3.2 Boron SIMS data at Experiment (C,B co-implant)….….….........30
3.3 Simulation Analysis.…………. …. ….….……………………...33
3.3.1 Carbon-doped silicon Model. ….….…….…………………...33
3.3.2 Point Equilibrium concentrations…...…….…………..……...34
3.3.3 BF2 Implantation………………………….…………..……...35
3.3.4 Steps of application by TSUPREM4…………………………36
3.4 Electrical data Analysis…………………………….………..........39
3.5 Contact Resistance, and Sheet Resistance……….……................42
Chapter 4
CONCLUSION……………...…….……………………….44

Reference.................................................................................47
[1]Ibrahim Ban, 1997,”Suppression of Oxidation-Enhanced Boron Diffu-sion in Silicon by Carbon Implantation and Characterization of MOS-FET’s with Carbon-Implanted Channels” IEEE Transactions on Elec-tron devices.Vol.44
[2]R.F Scholz, 1999, “The contribution of vacancies to carbon out-diffusion in silicon” APPLIED PHYSICS LETTERS. 1999 Vol. 74.
[3]Ulrich Goesele,2000,“Diffusion Engineering by Carbon in Silicon”. Mat.Res.Soc.Symp.Vol.610.
[4]H.Rucker,1997,“Modeling the Effect of Carbon on Boron Diffu-sion.”IEEE.
[5]A.Mattoni,2002,“Self-interstitial trapping by carbon complexes in crystalline silicon”,PHYSICAL REVIEW.
[6]P.Werner,1997,”Investigation of CSi defect in C implanted silicon by transmission electron microscopy”,APPLIED PHYSISC.Letter.70.
[7]M.C.Carroll,1998,”Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation”,APPLYIED PHYSICS LET-TERS,vol 73.
[8]R.Pinacho,2002,“Carbon in silicon:Modeling of diffusion and cluster-ing mechanisms”,JOURNAL of APPLIED PHYSICS,vol 92.
[9]D.De Salvador,2001“Carbon diffusion and clustering in the SiGeC lay-ers under thermal oxidation”,Mat.Res.Soc.Symp.Proc.
[10]P.A.Stolk,1995,”Carbon incorporation in silicon for suppressing in-terstitial-enhanced boron diffusion”,American Institute of Physics.
[11]Julie L,Ngau,2001,”Modeling the suppression of boron transient en-hanced diffusion in the silicon by substitutional carbon incorporation”, JOURNAL OF APPLIED PHYSICS.
[12]Sumeet Kapur,“Carbon-Mediated Aggregation of Self-Intterstitials in Silicon.”
[13]Sze,”SEMICONDUCTOR DEVICES Physics and Technology”
[14]Hong Xiao,”Introduction to semiconductor Mnufactuing Technol-ogy”.
[15]Chen,”Microelectronics Materials and Processing”.
[16]P.Werner,”TEM investigation of C-Si defects in Carbon implanted Silicon”.
[17]Lance Stanford,2001,” Diffusion of ion implanted Boron in silicon: The effect of lattice defects and co-implanted impurities.” UNIVER-SITY OF FLORIDA.
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