(35.175.212.130) 您好!臺灣時間:2021/05/17 20:51
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:胡智祥
研究生(外文):C.H.Hu
論文名稱:具不對稱矽鍺MSM光檢測器之研究
論文名稱(外文):Study of SiGe MSM Photodetector with Asymmetry Electrodes
指導教授:黃俊達黃俊達引用關係
指導教授(外文):J.D.Hwang
學位類別:碩士
校院名稱:大葉大學
系所名稱:電機工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2005
畢業學年度:93
語文別:中文
論文頁數:39
中文關鍵詞:矽/矽鍺金屬-半導體-金屬對稱不對稱異質接面
外文關鍵詞:Si/SiGemetal - semiconductor - metalsymmetryasymmetryheterojunction
相關次數:
  • 被引用被引用:0
  • 點閱點閱:111
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
由於光纖通訊的蓬勃發展,使得光電元件的需求大增,過去大部分的光電元件都是採用三五族的半導體材料,使得矽質材料在目前光電積體電路上處於相對弱勢,而由於矽在大自然界的含量豐富、材料取得容易、製程費用不高等優點,這是我們針對矽質結構深入探討的動機之一。
本文針對在單晶矽/矽鍺金屬-半導體-金屬光檢測器的光電特性做探討,金屬接觸方面我們用了鎳(Ni)、金(Au)、鉻(Cr)等金屬,金屬電極在對稱(symmetry)與不對稱(asymmetry)的情形下,在元件照光與不照光的時候,在電流-電壓特性曲線改變的情形。
在檢測器元件的結構方面,我們使用矽與矽鍺的異質接面。金屬電極我們捨棄一般平面式的電極,進而採用垂直式的電極。實驗的量測結果,金屬電極在不對稱時,暗電流比在對稱時降低許多,達到我們實驗預期的結果。
Flourishing development because of the optical-fiber communications, make the demand for the photoelectric component heighten, most photoelectric components are semiconductor materials which adopt the clan of III-V the past, make the silicon photoelectric integrated circuit at present of material in relative weak tendency, because the content in the nature of silicon is abundant, high advantage of easy getting, makes low expenses that the material is obtained, this is why we to do one of the silicon deep motives that probe into of structure.
This text is to do the discussion in the single crystal silicon / silicon germanium metal - semiconductor – metal only photoelectric characteristic of the measuring device, the metal is exposed to the respect we have used, such as nickel (Ni ), gold (Au ), chromium (Cr ),etc., the metal electrode is under the symmetrical (symmetry ) and asymmetric (asymmetry ) situation, when the component takes the picture the light with shine all, on the electric current- the situation that the voltage characteristic contours change.
In structure of the detection device component, we connect the surface heterojunction of silicon and silicon germanium. We give up the electrode of the general level type in metal electrode, and then adopt the rectilinear electrode. Quantity of experiment examine result, metal electrode when asymmetric, than reduce much more when symmetry dark current, reach the anticipated result of our experiment.
封面內頁
簽名頁
授權書......................... iii
中文摘要........................v
英文摘要.......................vi
誌謝.........................vii
目錄.........................viii
圖目錄.........................x
表目錄........................xii

第一章 序論
1.1 矽基元件..................1
第二章 原理
2.1 矽鍺技術與應用...............2
2.1.1 以矽鍺為主的HBT .......... 2
2.1.2 HBT元件的電路應用..........3
2.2 金半接面(Metal-Semiconductor Junction) .. 4
2.2.1蕭基接觸(Schottky Contact) ..... 6
2.2.2 蕭基整流效應............. 8
2.3蕭基及MSM光二極體(Schottky and MSM photodiode)
...................... 9
2.4光檢測器的偏壓與電流(基本工作原理).... 10
第三章 實驗方法
3.1實驗架構................. 12
3.2清洗材料................. 12
3.3金屬沉積................. 15
3.3.1蒸鍍原理.............. 16
3.3.1.1熱阻式蒸鍍機........ 17
3.4實驗量測................. 17
第四章 結果與討論.................. 21
第五章 結論..................... 22
參考文獻....................... 37




圖目錄

圖2.1 .........................5圖2.2 .........................5
圖3.1.........................15
圖3.2.........................16
圖3.3.........................18
圖4.1.........................23
圖4.2.........................24
圖4.3.........................25
圖4.4.........................26
圖4.5.........................27
圖4.6.........................28
圖4.7.........................29
圖4.8.........................30
圖4.9.........................31
圖4.10........................32
圖4.11........................33
圖4.12........................34
圖4.13........................35
圖4.14........................35
圖4.15........................36

表目錄

表1. .........................7
表2. .........................8
表3. .........................23
表4. .........................24
表5. .........................25
表6. .........................26
表7. .........................27
表8. .........................28
表9. .........................29
表10. ........................ 30
表11. ........................31
表12. ........................32
表13. ........................33
表14. ........................34
[1]、X, Xiao, James C. Sturm, IEEE, S. R. Parihar, Student Member, IEEE, S. A. Lyon, D. Meyerhofer, Senior Member, IEEE, Stephen Palfrey, Member, IEEE, F. V. Shallcross,Electron Device Letters, Vol.14, NO. 4, April 1993
[2]、A. R. Saha, S. Chattopadhyay, G. K. Dalapati, S. K. Kandi, C. K. Maiti, (MIEL 2004), Vol. 1, NIS, Serbia And Montenegro, 16-19 May, 2004
[3]、M. Löken, L. Kappius, S. Manti, Ch. Buchal, Electronics Letters, Vol. 34, NO. 10, 14th May, 1998
[4]、C. Engel*, P. Baumgartner, M. Holzmann, J. F. Nützel, G. Abstreiter, Thin Solid Film, Vol. 294, 347-350, 1997
[5]、Henry C. Lee, Bart Van Zeghbroeck, Member, IEEE, Electron Device Letters, Vol. 16, NO. 5, May 1995
[6]、S. Y. Chou, S. Alexandrou,* C. C. Wang,* T. Y. Hsiang,* Electron Devices, Vol. 40, NO. 11, NOVEMBER 1993
[7]、M. Ghioni, S. Cova, F. Zappa, Electron Devices, Vol. 40, NO. 11, NOVEMBER 1993
[8]、Bart J. Van Zeghbroeck, Member, IEEE, William Patrick, Member, IEEE, Jean-Marc Halbout, Member, IEEE, Peter Vettiger, Member, IEEE, Electron Device Letters, Vol. 9, NO. 10, October 1988
[9]、Oliver Vendier, Student Member, IEEE, Nan Marie Jokerst, Member, IEEE, Richard P. Leavitt, Member, IEEE, Photonics Technology Letters, Vol. 8, NO. 2, February 1996
[10]、Li Hong Laih, Tien Chang, Yen Ann Chen, Member, IEEE, Wen Chin Tsay, Member, IEEE, Jyh Wong Hong, Electron Devices, Vol.45, NO. 9, September 1998
[11]、P. Kruck, A. Weichsrlbaum, M. Helm, T. Fromherz, G. Bauer, Superlattices and Microstructures, Vol.12, NO. 1, 1998
[12]、W. C. Koscielnaik, Robert M. Kolbas, Member, IEEE, Michael A. Littlejohn, Member, IEEE, Electron Device Letters, Vol. 9, NO. 9, September 1998
[13]、Y. K. Fang, S. B. Hwang, Y. W. Chen, L. C. Kuo, Electron Device Letters, Vol. 12, NO. 4, April 1991
[14]、Y. Onganer, M. Saglam, A. Türüt, H. Efeoglu, S. Tüzemem, Solid State Electronics, Vol. 39, NO. 5, 1996
[15]、F. La Via*, F. Roccaforte, V. Raineri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Cavallini, Microelectronic Engineering 70, p. 519-523, 2003
[16]、Shigeaki Zaima*, Osamu Nakatsuka, Akira Sakai, Junichi Murota, Yukio Yasuda, Applied Surface Science 224, p. 215-221, 2004
[17]、C. Manke*, Y. Bodschwinna, M. Schulz, Applied Surface Science 117/118, p. 321-328, 1997
[18]、Keiji Maeda*, Applied Surface Science 224, p. 159-160, 2004, 154-160
[19]、N. Benouattas, B. Tamaarat, A. Bouabellou, R. Halimi, A. Mosser, Solid State Electronics, Vol. 43, p. 439-446, 1999
[20]、Zs. J. Horvàth*, M. Ádàm, L. Szabò, M. Serènyi, Vo Van Tuyen, Applied Surface Science, Vol. 190, p. 441-444, 2002
[21]、Chi On Chui, Student Member, IEEE, Ali K. Okyay, Student Member, IEEE, Krishna C. Saraswat, Fellow, IEEE, Photonics Technology Letters, Vol. 15, NO. 11, November 2003
[22]、Cha Shin Lin, Yun Chen Chang, Rong Hwei Yeh, Jyh Wong Hong, Electron Devices, Vol. 50, NO. 5, May 2003
[23]、W. A. Wohlmuth, P. Fay, C. Caneau, I. Adesida, Electronics Letters, Vol. 32, NO. 3, February 1996
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關期刊