跳到主要內容

臺灣博碩士論文加值系統

(44.213.60.33) 您好!臺灣時間:2024/07/21 11:30
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:焦繼葳
研究生(外文):Chi-Wei Chiao
論文名稱:在偏壓下利用微波電漿化學氣相沉積法以內嵌鑽石晶種來沉積多晶鑽石薄膜的成長機制
論文名稱(外文):The Growth Mechanism of Polycrystalline Diamond Thin Films Deposited by MACVD under Bias with Diamond Seed Embedded
指導教授:李世鴻李世鴻引用關係
指導教授(外文):Shih-Fong Lee
學位類別:碩士
校院名稱:大葉大學
系所名稱:電機工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2005
畢業學年度:93
語文別:中文
論文頁數:193
中文關鍵詞:微波電漿化學氣相沉積多晶鑽石薄膜偏壓增強成核(BEN)
外文關鍵詞:microwave assisted CVDpolycrystalline diamond filmsbias enhanced nucleation
相關次數:
  • 被引用被引用:0
  • 點閱點閱:339
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
多晶鑽石薄膜的的鑽石顆粒尺寸會受成長的時間、反應氣體的比例、成核的機制等因素影響。本實驗採用微波電漿化學氣相沉積法,以CH4和H2作為反應氣體原料,在p型(111)矽基板沉積多晶鑽石薄膜。在多晶鑽石的沉積之中,傳統的製程可分為四階段:拋蝕表面、滲碳、偏壓增強成核(BEN)、成長。在偏壓增強成核階段,矽基板被負偏壓以吸引帶正電的碳與氫離子前往基板,然後在矽基板上鍵結成碳化矽(SiC)、鑽石核及碳化物層。而且我們故意將CH4/H2比例提高至1:40,使反應腔裡氣體分子的含碳量提高。在本研究中,我們發現滲碳步驟可以被刪除。而鑽石成核所須要的碳化矽界面層則可由之後具有較大CH4濃度的BEN步驟來得到。我們的實驗結果也顯示,如果將成長步驟劃分為兩個步驟,其中一個具有較低壓力的步驟,追隨著另一個具有較高壓力的步驟,則可獲得較佳的鑽石。這個現象的一種可能的解釋乃是,在低壓時平均自由路徑較大,因此電子得以從電場獲致足以解離工作氣體所須要的能量,因此會有許多解離的物種及根種來使成長過程加速所致。
The grain size in polycrystalline diamond films is determined by many factors including growth period, ratio of reacting gases, and nucleation mechanism.
In this study, using CH4 and H2 as working gas, microwave assisted CVD was utilized to deposit polycrystalline diamond films on p-type (111) Si substrates. In the deposition of polycrystalline diamond films, conventional process can be divided into 4 stages: etching, carburization, biased enhanced nucleation (BEN), and growth. In the BEN stage, Si substrate was negatively biased to attract positively charged hydrogen and carbon ions towards the substrate and subsequently bonded with each other to form silicon carbide, diamond nuclei, and carbonated layer. And the CH4/H2 ratio was intentionally raised to 1:40 so that the carbon concentration in the deposition chamber was accordingly increased. In this study, it was found that carburization step can be erased. The SiC interface layer required for nucleation of diamond can also be achieved in the subsequent BEN step with larger CH4 concentration instead. Our experimental results also showed that better diamond films can be achieved if the growth phase was divided into two steps: one step with lower pressure, followed by another step with higher pressure. One possible explanation is that mean free path at low pressure is large, electrons can thus obtain enough energy from electric field to ionize working gases so that there was plenty ionized species and radicals to accelerate the growth process.
封面內頁
簽名頁
授權書........................iii
中文摘要.......................iv
英文摘要........................v
誌謝.........................vii
目錄.........................viii
圖目錄........................xiv
表目錄........................xix

第一章 序論
1.1 前言........................1
1.2 鑽石薄膜在工業上的應用...............4
1.3 研究動機......................6
第二章 鑽石薄膜成核理論與文獻回顧
2.1 鑽石薄膜的特性...................8
2.1.1 碳的性質(Properties of carbon)..........8
2.1.1.1 晶質碳結構...............8
2.1.1.2 非晶質碳結構.............10
2.1.2 硬度(Hardness)................15
2.1.3 熱傳導係數(Thermal conductivity)........15
2.1.4 化學反應性..................17
2.1.5 密度(Density).................17
2.1.6 光學性質(Optical properties)...........19
2.1.7 電性(Electrical properties)............19
2.2 鑽石的合成....................21
2.2.1 發展沿革...................21
2.2.2 合成方法...................24
2.2.2.1 高溫高壓法..............26
2.2.2.2 氣相合成法..............28
2.3 微波電漿輔助化學氣相沉積原理...........34
2.3.1 微波電漿原理.................34
2.3.2 熱力學分析..................37
2.3.3 動力學分析..................38
2.3.4 鑽石薄膜的磊晶成長..............41
2.4 促進孕核方法...................46
2.4.1 殘留鑽石晶種.................46
2.4.2 表面形態破壞.................46
2.4.3 離子佈植與雷射處理..............46
2.4.4 基板選擇與表面覆膜..............47
2.4.5 中間介質層..................48
2.4.6 偏壓輔助成核(BEN)..............49
2.5 成核密度之加強..................54
2.5.1 研磨或撞擊矽晶片表片.............54
2.5.1.1 研磨或撞擊矽表面的材料........54
2.5.1.2 研磨或撞擊矽表面的方法........55
2.5.2 鑽石晶種植入(seeding).............55
第三章 實驗方法與步驟
3.1 實驗流程.....................57
3.2 微波電漿化學氣相沉積系統設計...........58
3.2.1 微波電漿化學氣相沉積系統...........58
3.2.1.1 反應氣體輸送系統...........58
3.2.1.2 真空系統...............58
3.2.1.3 反應沉積系統.............59
3.2.1.4 微波輸出電源供應系統.........60
3.2.1.5 循環冷卻系統.............60
3.2.2 材料選擇...................63
3.2.3 鍍層成長條件設定...............63
3.3 實驗步驟及原理..................64
3.3.1 前處理....................64
3.3.1.1 研磨處理...............64
3.3.1.2 上晶種................65
3.3.2 拋蝕表面...................65
3.3.3 偏壓輔助成核(Bias Enhanced Nucleation;BEN)..66
3.3.4 成長I....................67
3.3.5 成長II....................68
3.3.6 沉積鑽石薄膜的後處理.............69
3.4 邊際快速連鎖成核效應...............70
3.4.1 去除〝邊際快速連鎖成核效應〞之方法......75
3.5 薄膜特性分析...................76
3.5.1 物性量測...................76
3.5.1.1 拉曼光譜分析.............77
3.5.1.2 掃描式電子顯微鏡...........80
3.5.2 電性量測...................81
第四章 結果與討論
4.1 偏壓輔助成核(BEN)階段...............82
4.1.1 偏壓時間的影響................82
4.1.1.1 改變偏壓輔助成核階段的偏壓時間....82
4.1.1.2 成長I階段外加-100 V偏壓時,改變偏壓輔助成核階段的偏壓時間..........84
4.1.2 碳氫濃度比的影響...............87
4.1.3 偏壓的影響..................90
4.1.3.1 改變偏壓輔助成核階段的偏壓大小....90
4.1.3.2 成長II階段反應壓力50 torr時,改變偏壓輔助成核階段的偏壓大小..........92
4.1.3.3 成長II階段反應壓力100 torr時,確定偏壓輔助成核階段的存在性..........94
4.1.3.4 成長II階段反應壓力50 torr時,確定偏壓輔助成核階段的存在性...........96
4.1.4 反應壓力的影響................98
4.2 成長I階段.....................101
4.2.1 偏壓的影響..................101
4.2.1.1 成長I階段反應壓力50 torr時,在成長I階段外加偏壓的與否............101
4.2.1.2 成長I階段反應壓力100 torr時,在成長I階段外加偏壓的與否............103
4.2.1.3 確定成長I階段的存在性........106
4.2.2 反應壓力的影響................108
4.2.2.1 成長I階段不外加偏壓時,改變成長I階段反應壓力.................108
4.2.2.2 成長I階段外加偏壓-100 V時,改變成長I階段反應壓力...............110
4.2.3 沉積時間的影響................114
4.2.4 碳氫濃度比的影響...............117
4.3 成長II階段....................120
4.3.1 反應壓力的影響................120
4.3.1.1 偏壓輔助成核階段有外加偏壓-100 V時,確定成長II階段的存在性..........120
4.3.1.2 偏壓輔助成核階段無外加偏壓-100 V時,確定成長II階段的存在性..........122
4.3.1.3 取消偏壓輔助成核階段,確定成長II階段的存在性.................124
4.3.2 碳氫濃度比的影響...............127
4.3.3 偏壓的影響..................129
4.3.3.1 在成長II階段外加偏壓存在性......129
4.3.3.2 成長I階段有外加-100 V電壓時,在成長II階段外加偏壓存在性...........130
4.3.3.3 沒有成長I階段時,在成長II階段外加偏壓的存在性................132
第五章 結論......................135
參考資料.......................138
附錄.........................152
[1]J. E. Field (ed.), "The properties of natural and synthetic diamond" , Academic Press, 1992.
[2] Y. Tzeng, M. Yoshikawa, M. Murakawa and Feldman, “The Applications of Diamond Films and Related Materials”, eds, Elsevier, New York, (1991), (ADC).
[3]宋健民,工業鑽石未來大勢,工業材料,第134 期,民87.02,
第143-153頁。
[4]宋健民, 鑽石合成, 台北市:全華, 民89年, 第5.47-5.53頁.
[5] Isberg, J. et al. “High carrier mobility in single-crystal plasma- deposited diamond. “, Science, vol 297, 2002, pp. 1670 – 1672
[6]許庭瑋,微波輔助化學氣相沉積合成奈米碳管與特性分析,碩
士論文,國立臺北科技大學光電技術研究所,台北,2002。
[7]鄭恆餘,微晶鑽石之製備與電漿鞘對鑽石薄膜成長影響之研
究,碩士論文,國立台北科技大學機電整合研究所
[8] R. J. Nemanich et al., “Raman scattering characterization of carbon bonding in diamond and diamond-like thin films” , J. Vac. Scl. Technol. A, Vol 6, No 3, 1988, pp. 178
[9] J. H. Schön, Ch. Kloc, and B. Batlogg,.” High-Temperature Superconductivity in Lattice-Expanded C60”, Science, Vol 293, 2001, pp. 2432-2434
[10]林玉燕,晶種預芽技術對碳化鎢(WC-Co) 基板成長鑽石膜性質之影響,碩士論文,國立台北科技大學機電整合研究所,2001。
[11] Emerging Techologies No.25, "Diamond Films Evaluating the Technology and Opportunities", published by Technical Insights, Inc., Englewood Fort Lee. NJ.
[12] Y. L. Orlov, The mineralogy of the diamond, New York: John Wiley & Sons Inc., 1977, pp. 1-29
[13]宋建民 ,鑽石的故事 --- 美麗鑽石背後的一些醜陋往事, 工
業材料 第104期,民86年,第44頁。
[14] Joe Wong and F. W. Lytle, “Nature of catalytic impurities in synthetic diamonds. An identification using extended x-ray absorption fine structure”, J. Appl. Phys., Vol 51, 1980, pp. 280
[15] W. G. Eversole, U.S. Patent No.9, 030, 1962, 188,
[16] J. C. Angus, H. A. Will and W. S. Stanko, J. Appl. Phys., 39, 1968, pp. 2915
[17] B. V.Spitsyn, L. L. Bouilov, and B. V. Derjaguin, “Vapor growth of diamond on diamond and other surfaces”, J. Cryst. Growyh, vol52, 1981, pp. 219
[18] W. L. Hsu, "Chemical erosion of graphite by hydrogen impact: A summary of the database relevant to diamond film growth", J. Vac. Sci. Tech., A6(3), May/Jun(1988)1803-1811.
[19] A. M. Bonnot, "Overview of the characterization methods of the growth mechanisms of low pressure diamond", Surf. Coat. Tech., 45(1991)343-352
[20]宋健民,以物理氣相沉積(PVD)鍍類似鑽石碳膜(DLC)(中),工
業材料第148期 民88.
[21]鄭晃忠、澹台富國、洪偉凱,鑽石薄膜材料技術與應用,電子
月刊第三卷第三期,1997
[22]簡廷憲、林全益、洪志旺,電漿助長式化學氣相沉積系統簡介,
真空科技七卷三、四期
[23]李世鴻,積體電路製程技術,五南圖書出版公司,民國87年
[24]朱俊勳,化學氣相沉積鑽石膜之研究,國立成功大學學礦冶及材料科學研究所,1993,博士論文
[25]阿部東彥,家田正之,電漿化學,chap 2 高正雄譯,復漢出版社
[26] S. Veprek, “Chemical evaporation and deposition of solids in a non-isothermal plasma; chemical transport of carbon”, J. Crystal Growth 17 (1972) 101.
[27] M. Sommer, K. Mui and F. W. Smith, Solid State Commun. 69 (1989)775.
[28] D. E. Patternson, C. J. Chu, B. J. Bai, N. J. Komplin, R. H. Hauge and J. L. Margrave, “Thermochemical vapor deposition of diamond in a carbon-hydrogen-halogen and/or sulfur atmosphere hot wall reactor”, Proceedings of the First International Conference on the Application of Diamond films and Related Materials, edited by Y. Tzeng, M. Yoshokawa and A. Feldman, Auburn, Alabama, USA, (1991) 569.
[29] H. Schlichting, Boundary Layer Theory, 6th ed., McGraw-Hill Book Co. (1968), p. 26,27,89,94.
[30] M. Frenklach, W. Howard, D. Hung, J. Yuan, K. E. Spear, and R. Koba, "Induced nucleation of diamond powder", Appl. Phys. Lett., 59(5), p.546(1991).
[31] R. Avni and U. Carmi, “Recent advances in ceramic coatings obtained by chemical vapor deposition and plasma processing deposition”,Materials Science and Engineering, 71 (1985) 341.
[32] B. V. Derjaguin and D. V. Fedoseev, "Growth of diamond and graphite from gas phase", Nauka, Moscow, (1977) in Russian.
[33] M. Tsuda, M. Nakajima and S. Oikawa, "Epitaxial growth mechanism of diamond crystal in CH4-H2 plasma", J. Am. Chem. Soc. 108 (1986), p. 5780.
[34] M. Tsuda, M. Nakajima and S. Oikawa, "The importance of the positively charged surface for the epitaxial growth of diamonds at low pressure", Jpn. J. Appl. Phys. 26 (1987) L527.
[35] R. Badzian and R. C. DeVries, "Crystallization of diamond from the gas phase; part 1", Mat. Res. Bull. 23 (1988) 385.
[36] R. Badzian, T. Badzian, R. Roy, R. Messier and K. E. Spear, "Crysatllization of diamond crystals and films by microwave assisted CVD (part II)", Mat. Res. Bull. 23 (1988) 531.
[37] K. E. Spear, "Diamond-ceramic coating of the future", J. Am. Ceram. Soc., 72[2] (1989) 171-191.
[38] S. J. Harris and A. M. Weiner, "Measurement of stable species present during filament-assisted diamond growth", Appl. Phys. Lett. 53 (1988)1605.
[39] P. Chang, D. L. Flamm, D. E. Ibbotson and J. A. Mucha, "Diamond crystal growth by plasma chemical vapor deposition", J. Appl. Phys., 63(1988)1744.
[40] W. L. Hsu, "Chemical erosion of graphite by hydrogen impact: A
summary of the database relevant to diamond film growth", J. Vac. Sci. Technol. A6 (1988) 1803.
[41] J. T. Wang and J. O. Carlsson, "A thermochemical model for diamond growth from the vapour phase", Sur. and Coat. Tech. 43/44 (1990) 1.
[42] A. Weimer, F. M. Cerio and C. E. Johnson, "Examination of the
chemistry involved in microwave plasma assisted chemical vapor deposition of diamond", J. Mater. Sci. 6 (1991) 2134.
[43] W. Banholzer, "Understanding the mechanism of CVD diamond", Sur. and Coat. Tech. 53 (1992) 1.
[44] F. G. Celii, and J. E. Butler, "Hydrogen-atom detection in the filament-assisted daimond deposition environment", Appl. Phys. Lett., 54(11), p. 1031(1989).
[45] M. Frenklach, and K. E. Spear, "Growth-mechanism of vapor- deposited daimond", J. Mater. Res., 3(1), p.133(1988).
[46] S. J. Harris, "Mechanism for diamond growth from methal radicals", Appl. Phys. Lett., 56(23), p. 2298(1990).
[47]彭國光,微波電漿化學氣相沉積法之鑽石薄膜的成長與特性研究,國立清華大學材料科學工程學系,民91年博士論文
[48] Jung Ho Je, G. Y. Lee, "Microstructures of diamond films deposited on (100) silicon wafer by microwave plasma-enhanced chemical vapour deposition", J. Mater. Sci., 27, p. 6324(1993).
[49] T. P. Ong, F. L. Xiong, and R. P. H. Chang, ”A mechanism of diamond nucleation and growth on single crystal copper”, paper # M8.2, MRS Spring meeting, San Franciso, April, 1992.
[50] S. M. Pimenov, A. A. Smolin, V. G. Ralchenko, V. I. Konov, S. V. Likhanski and I. A. Veselovski, “UV Laser Processing of Diamond Films-Likhanski and I. A. Veselovski, “UV Laser Processing of Diamond Films-Film Surfaces”, Diamond Relat. Mater., 2, 291(1993).
[51] B. V. Spitsyn and B. V. Deryagin,U. S. S. R. Inventors Certificate (Patent Application), 1956
[52] B. R. Stoner, G. H. M. Ma, S. D. Wolter, and J. T. Glass, Physical Review B 45(19), 11067 (1992).
[53] R. Stöckel, M. Stammler, K. Janischowsky, L. Ley, M. Albrecht, and H. P. Strunk, J. Appl. Phys. 83 (1), 531 (1998).
[54] R. Stöckel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen, and L. Ley, J. Appl. Phys., 79 (2), 768 (1996).
[55]欒秉璈,中國寶石和寶玉,大陸:新疆人民出版社,1989,第
27頁
[56] M. M. Garcia, I. Jimenez, O. Sanchez, C. Gomez-Aleixandre, and L. Vazquez, Physical Review B 61(15), 10383 (2000).
[57]謝浚豪、劉丙寅、范正宏,鑽石薄膜成長技術簡介化學氣相沉積法與BEN技術概述,機械工業雜誌,245期,p129-137
[58] Jing Sheng Ma, et. al., “Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition”, Appl. Phys Lett., 55 (11), pp. 1071-1073 (11 Sept. 1989).
[59] R. Ramesham et. al., “Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation”, J. Mater. Res., l7(5), pp. 1144-1151 (May 1992).
[60] R. Ramesham, et. al., “Selective growth of diamond crystals on the apex of silicon pyramids”, J. Mater. Res., 7(5), pp. 1189-1194 (May 1992).
[61] R. Ramesham, et. al., “Characterization of polycrystalline diamond thin films grown on various substrates”, Thin Solid Films, 212, pp. 96-103 (1992).
[62] R. Ramesham, et. al., “Selective growth, characterization , and microstructure fabrication of undoped and doped polycrystalline diamond thin films”, Material Science Monographs 73- Applications of Diamond Films and Related Materials, ADC‘91, Auburn, Alabama, U.S.A., Aug. 17-22, pp411-416(1991).
[63] J.L. Davidson, et. al., “Selective Deposition of Diamond Films”, J. of Electronic Materials, 18(6), 711-715 (1989).
[64] Jing-Sheng. Ma, et. al., “Interfacial structures and selective growth of diamond particles formed by plasma-assisted CVD”, Applied Surface Science, 41/42, pp. 572-579 (1989).
[65] Jing-Sheng Ma, et. al., “Nucleation control and selective growth of diamond particles formed with plasma CVD”, J. of Crystal Growth, 99, pp. 1206- 1210 (1990).
[66] Jing Sheng Ma, et. al., “Selective nucleation of diamond particles by plasma-assisted chemical vapor deposition”, proceeding of the 1st Int. symp on Diamond and Diamond -like films, Electrochem. Soc., pp. 149-161, 1989.
[67] K.Hirabayashi et. al., “Selective deposition of diamond crystals by chemical vapor deposition using a tungsten-filament method”, Appl. Phys. Lett., 53 (19), Nov., pp. 1815-1817 (1988).
[68] Takayoshi Inoue, et. al., “Selected-area deposition of diamond films”, J. Appl. Phys., 67 (12), pp. 7329-7336 (15 June 1990).
[69] K. Kobashi, et. al., “Selected-area deposition of CVD diamond films”, proceedings of the lst Int. Symp. on Diamond and Diamond-like Films, Electrochem. Soc., pp. 139-148(1989).
[70] S.J. Lin, et. al., “Effects of local facet and latticed damage on nucleation of diamond grown by microwave plasma chemical vapor deposition”, Appl. Phys. Lett., 60(13), pp. 1559-1561 (30 March 1992).
[71] M. Aslam, et. al, “CVD Diamond Piezoresistive Sensors”, The 7th International Conference on Solid-State Sensors and Actuators, 718-721 (1993).
[72] J. L. Valdes, et. al., “Selected Area Nucleation and Patterning of Diamond Thin Films by Electrophoretic Seeding”, J. Electrochem. Soc., 138(2), pp. 635-636 (Feb.1991).
[73] J. L. Valdes, “Electrophoretic Deposition of Colloidal Diamond for Selective DVD Growth of Diamond Films, Material Science Monographs 73 - Applications of Diamond Films and Related Materials, ADC‘91, Auburn, Alabama, U.S.A. Aug. 17-22, pp. 423-428 (1991)”.
[74] K. Higuchi et.al., “Selected area diamond deposition by control of the nucleation sites”, Diamond and Related Materials, 1, pp. 220-229 (1992).
[75] Satoshi Katsumata, et. al., “New method for selective growth of diamonds by microwave plasma chemical deposition”, Diamond and Related Materials, 2, 1490-1492 (1993).
[76]吳錦裕,大面積磊晶鑽石薄膜的生長,國立中山大學物理研究所,84年碩士論文
[77]楊志仁、陳貴賢、林麗瓊,高透光率之奈米鑽石薄膜的成長,
電子月刊,1999年6月,p. 70
[78]吳錦裕、陳貴賢,大面積磊晶鑽石薄膜生長,真空科技,九
卷二期
[79] S. Yugo, T. Kanai, T. Kimura, and T. Muto, Appl. Phys. Lett. 58(10) (1991) 1036-1038
[80] B. R. Stoner, G. H. M. Ma, S. D. Wolter, and J. T. Glass, Phys. Rev B, 45(1992) 11067-11084
[81] W. Kulisch, S. Sobisch, M. Kuhr and R. Beckmann, Diamond and Related Materials, 3(1995) 401-405
[82] Z. Li and M. Sunkara, Nature, 364(6438) (1993) 607
[83] R. Stockel, K. Janischowsky, S.Rohmfeld, J. Ristein, M. Hundhausen and L. Ley, paper submitted to Phys. Stat. Sol (a) 1996
[84] L. C. Chen, C. C. Juan, J. Y. Wa, K. H. Chen, and C. W. Teng, Mater. Res. Soc. Symp. Proceedings (416) (1995)
[85]李源弘、吳玉祥、蔡明興、柯賢文、翁通楹,化學氣相沉積鑽
石薄膜性質之研究,Chinese Journal of Materials Science,Vol. 25,No. 3,pp. 163-173
[86] S. A. Grot, Gennady Sh. Gildenblat, C. W. Hatfield, C. R. Wronski, A. R. Badzian, T. Badzian, and R. Messier, "The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film", IEEE Electron   Devices Letters, Vol. 11, No. 2, pp. 100-102, 1990.
[87] S. Albin and L. Watkins, “Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma”, IEEE Electron Device Letters, Vol. 11, No. 4, 1990
[88]周學韜,鑽石薄膜光電特性與應用之研究(I),國立雲林科技
大學電子與資訊工程研究所,民國86年行政院國家科學委員會研究報告
[89] S. Barrat, S. Saada, I. Dieguez, and E. Bauer-Grosse, J. Appl. Phys. 84, 1870 (1998).
[90] B. R. Stoner, G. J. Tessmer, and D. L. Dreifus, Appl. Phys. Lett. 62, 1803 (1993).
[91] R. Stockel, K. Janischowsky, S. Rohmfeld, J. Ristein, L. Ley, and M. Hundhausen, J. Appl. Phys. 79, 768 (1996).
[92] R. Stockel, M. Stammler, K. Janischowsky, L. Ley, M. Albrecht, and H. P. Strunk, J. Appl. Phys. 83, 531 (1998).
[93] Q. Chen, and Z. Lin, Appl. Phys. Lett. 68, 2450 (1996).
[94] Q. Chen, and Z. Lin, J. Appl. Phys. 80, 797 (1996).
[95]李佳璋,未摻雜鑽石薄膜的電壓電流特性與電傳導機制分析,國立雲林科技大學,2000年碩士論文
[96]李匡邦, 許東明, 何東英, 1997, 光譜化學分析, 楊智文化事業, p. 296
[97] Aicha Elshabini-Raid, and Fred D. Barlow, 1997, Thin Film Technology Handbook, McGraw Hill Internation, pp 7-34
[98]黃振昌, 1993,〝鑽石合成膜及其工業應用研究子計畫二:多晶鑽石薄膜在電子元件的應用〞, 行政院國家科學委員會專題研究計畫成果報告, p. 31
[99] Y. H. Lee, P. D. Richard, K. J. Bachman, and J. T. Glass,〝Bias- controlled Chemical Vapor Deposition of Diamond Thin Films〞, Appl. Phys. Lett., 56(7), (1990), pp. 620-622
[100] W. Zhu, H. S. Kong, and J. T. Glass, 1993, Characterization of diamond films, Diamond Films and Coatings, Edited by R. F. Davis, Noyes Publications, Park Ridge, NJ, pp. 244
[101] D. S. Knight, and W. B. White,〝Characterization of Diamond Films by Ramon Spectroscopy〞, J. Mater. Res., 4, (1989), pp. 385-390
[102] S. Matsumoto and N. Setaka, "Thermal desorption spectra of
hydrogenated and water treated diamond powder", Carbon, 17 (1979) p. 485
[103] L. J. Huang, I. Bello, W. M. Lsu, S. T. Lee, P. A. Stevens, and DoVries, J. Appl. Phys. 76, 7483 (1994).
[104] Gordon Davies, 1994, Properties and growth of diamond, INSPEC, the Institution of Electrical Engineers, London, UK, p. 323
[105] K. J. Sladek, "The role of homogenous reactions in chemical vapor deposition", J. Electro-chem. Soc, 118 (1971) p. 189
[106] J. W. Ager, D. K. Veirs, and G. M. Rosenblart, "Spatraally resolved Raman studies of diamond film grown by chemical vapor deposition", Phy. Rev. B, Vol 43, 1991, pp. 96491
[107] E. Gheeraeert, A. Deneuville and A. M. Bonnot, "Defect and stress analysis of the Raman spectrum of diamond film", Diamond Relat. Mater., Vol, 1992, 525
[108] Lawrence S. Pan, Don R. Kania;Diamond:Electronic Properties and Application 1995
[109] N. Setaka, Hyomen (Surface) 22, 110 (1984) (in Japanese)
[110] M. Yoshikawa, G. Katagiri, H. Ishida, A. Ishitani, "Raman spectra of diamondlike amorphous carbon films" J. Appl. Phys. 64 (11), 6464 (1988)
[111] W. L. Wang, M. C. Polo, G. Snachez, J. Cifre, J. Esteve, "Internal stress and strain in feavily boron-doped diamond films grows by microwave plasma and hot filament chemical vapor deposition", J. Appl. Phys. 80 (3) (1846)
[112] X. Z. Liao, R.J. Zhang, C. S. Lee, S. Tong Lee, Y. W. Lam, "The influence of boron doping on the structure and characteristics of diamond thin films" Diamond Relat. Mater, 6, 521 (1997)
[113] V. Vorlicek, J. Rosa, M. Vanecek, M. Neslade, L. M. Stals, "Quantitativestudy of Raman scattering and defect optical absorption in CVD diamond films", Diamond Relat. Mater, 6, 704 (1997)
[114] P. Gonon, E. Gheeraert, A. Deneuville, and F. Fontaine, L. Abello, G. Lucazeau, "Characterization of heavily B-doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance" J. Appl. Phys. 78(12), 7059 (1995)
[115] Mikka Nishitani-Gamom, Toshihiro Ando, Kenji Watanabe, Masami Sekitam, Paul A. Dennig, Kazuo Yamamotom, Yoichiro Sato, "Interfacial structures of oriented diamond on Si (100) characterized by confocal Raman spectroscopy", Diamond Relat. Mater, 6, 1036(1997)
[116] K.E.Spear, M. Frenklach, A. Badzian, T. Badzian, R. Messier, “Vapor deposition of crystal diamond”, Ceram. Eng. Sci. Proc.,Vol 9 [9-10] , 1988, pp. 1095
[117] M. Yoshikawa, G. Katagiri, H. Ishida, A. Ishitani, "Raman spectra of diamondlike amorphous carbon films" J. Appl. Phys. 64(11), 6464 (1988)
[118] V. Vorlicek, J. Rosa, M. Vanecek, M. Neslade, L. M. Stals, "Quantitativestudy of Raman scattering and defect optical absorption in CVD diamond films", Diamond Relat. Mater, 6, 704 (1997)
[119] S. Iijima, Y. Aikawa, and K. Baba, "Early formation of chemical vapor deposition daimond films", Appl. Phys. Lett., 57(25), p. 2646(1990).
[120] B. Lux and R. Haubner, in Diamond and Diamond-like Films and Coatings, edited by R. E. Clausing et al. Plenum Press, New York, 1991
[121] A. Lettington, J. W. Steeds, 1994, "Thin Film Diamind", Great Britain by the University Press, Cambridge U.S.A
[122] S. D. Wolter, B. R. Stoner, J. T. Glass, P. J. Ellis, Appl. Phys. Lett., 62, 1215 (1993)
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top