臺灣博碩士論文加值系統

本研究主要探討將氮化鋁鎵薄膜及氮化鋁鎵/氮化鎵異質結構生長在(11-20)面氧化鋁基板上並分析其特性。氮化鋁鎵薄膜及相關結構以原子層磊晶製程生長於(11-20)面氧化鋁基板上。鋁、鎵與氮等元素之氣體源分別來自於三甲基鋁、三甲基鎵及高純度氨氣。氣體源的輸送氣體則為經過高度純化之氫氣。氮化鋁鎵薄膜與氮化鋁鎵/氮化鎵異質結構之表面型態、磊晶品質及光電特性分別採用干涉式光學顯微鏡、掃描式電子顯微鏡、穿透式電子顯微鏡、X-光繞射光譜和吸收光譜量測加以分析。從表面型態及微結構觀察的結果顯示，氮化鋁鎵薄膜生長在(11-20)面氧化鋁基板上與生長在（0001）面氧化鋁基板上，具備相似的薄膜特性。穿透式電子顯微鏡觀察得到的繞射圖樣顯示，氮化鋁鎵薄膜中<0001>AlGaN與<01-10>AlGaN 方向分別平行於氧化鋁基板<11-20>sapphire與<01-10>sapphire方向。

The purpose of this study is to explore the characteristics of AlGaN films and AlGaN/GaN heterostructures grown on (11-20) Al2O3 substrates using atomic layer epitaxy. Trimethylaluminum (TMA), trimethylgallium (TMG) and ammonia (NH3)were used as the sources of Al, Ga, and N atoms that were carried into the reactor by purified H2. The surface morphology, crystallinity and optical properties of AlGaN films and AlGaN/GaN heterostructures were characterized by Nomarski interference optical microscopy , scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray diffractometry (XRD), and absorption spectroscopy. The experimental results indicate that the properties of the AlGaN films and AlGaN/GaN structures deposited on the (11-20) Al2O3 substrates are comparable to those of the films and structures grown on the (0001) Al2O3 substrates. From the results of TEM diffraction patterns, AlGaN films were found to exhibit certain crystallographic relationship with (11-20) Al2O3 substrates. The <0001>AlGaN and <01-10>AlGaN were found to be in parallel to <11-20>sapphire and <01-10>sapphire, respectively.

中文摘要.....................................................I
英文摘要....................................................II
目錄.......................................................III
圖目錄.......................................................V
第一章 緒論.................................................1
第二章 研究背景及動機.......................................3
2.1 Ⅲ族氮化物材料及元件的發展歷史與文獻回顧.................3
2.2 原子層磊晶之生長機制及優缺點............................11
2.3 基板的選擇及結晶結構之差異..............................15
2.4 晶格錯配之結構..........................................22
第三章 實驗步驟............................................25
3.1基板清洗.................................................28
3.2 氮化鋁鎵薄膜之磊晶生長..................................29
3.3 氮化鋁鎵/氮化鎵異質結構之生長...........................30
3.4 氮化鋁鎵薄膜之特性量測與分析............................31
3.4.1 氮化鋁鎵薄膜之X光繞射分析.............................31
3.4.2 微分干涉式光學顯微鏡分析..............................33
3.4.3 光學性質量測..........................................35
3.4.4 掃描式電子顯微鏡分析..................................37
3.4.5穿透式電子顯微鏡分析...................................39
第四章 實驗結果與討論......................................42
4.1氮化鋁鎵薄膜直接生長在(11-20)面氧化鋁基板上..............42
4.2氮化鋁鎵/氮化鎵異質結構生長在(11-20)面氧化鋁基板上.......53
第五章 結論與未來研究方向..................................65
參考文獻....................................................66
致謝........................................................70
作者簡介....................................................71

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