參考文獻
[1] 石朗, “由MRAM/FeRAM 與Flash 卡應用潛力探究記憶體市 場技術的新思維與新契機”, Compo Tech, Vol. 16, (2000) 100.
[2] J.F. Scott , “Ferroelectric memories a atatus report ” present at Gover-nment Industry Review of Ferroelectric memories Sept 14 (1998).
[3] I. Stolichnov , A. Tagantsev , N. Setter , J.S. Cross ans M. Tsukda ,Appl. Phys. Lett. , Vol. 74 , 3552 (1999).
[4] H.M. Duiker , P.D. Beale , J.F. Scott , C.A. Paz de Araujo , B. M. Melnick , J.D. Cuchiaro , and L.D. McMillan , J. Appl. Phys. Vol. 68 , 5783 (1990).
[5] W.L. Warren , B.A. Tuttle , and D. Dimos , Appl. Phys. Lett.67 ,1426 (1995).
[6] P.C. Fazan , Integr. Ferroelect. , Vol. 4 , 247 (1994).
[7] W. Kinney , Integr. Ferroelect. , Vol. 4 , 131 (1994).
[8] R. Ramesh , A. Inam , B. Wilkens , W.K. Chan , S.L. Hart , K. Luther, and J.M. Yarascon , Science , 944 (1991).
[9] R. Ramesh , J. Lee , T. Sands , and V.G. Keramidsa , Appl. Phys.Lett. Vol. 64(19) , 2511 (1994).
[10] Kingery, Bowen, Vhlmann, Introduction to Ceramics,(1987).
[11] 徐靖薰 交通大學材料所碩士論文(1997).
[12] 吳朗,電子陶瓷(介電)全欣科技圖書,(1994) .
[13] Arthony R. West, Soild State Chemistry and its Application , (1984).
[14] 工業材料第155期,1999 年11月
[15] A. Kingon , Nature , Vol 401 , 658 (1999)
[16] J.L. Moll and U. Tarui , Rrans. Electron Devices (Solid-State Res.Conf. Abs. ) ED-10 , 338 (1963).
[17] J.F. Scott , and C.A. Paz. de. Araujo , Science , 246 , 1400 (1989).
[18] [6] C.A. Araujo , L.D McMillan , B.M. Melnick , J.D. Cuchiaro , and J.F.Scott , “Ferroelectric Memories” Ferroelectric. 104 , 241 (1990).
[19] G.A. Racine , R. Luthier , and N.F. Derooj , in Microelectro
Mechanical System , Fort Lauderdale , FL , 1993(IRRR m New York ,1993) , p128-132.
[20] K. Brooks , D. Damjanovic , A. Kholkin , I. Renney , N. Setter , P.Luginbuhl , G.A . Racine , N.F. Derooij , and A. Saaman , IntegrFerroelec . 8 , 13 (1995).
[21] A.M. Glass , Phys. Rev. 172 , 564 (1968).
[22] I. Hussain , A. Kumar , A. Mangiaracina , S.C. Perlaky , C.C. Mccombs , F. Zhong , J.J. Weimer , L. Sanderson , “Fabrication lf
piezoelectric Sensor for Biomedical Application” , Mat. Res. Soc.
Symp. Proc. Vol. 459 , 501 (1997).
[23] J.C. Webster , and F. Zernike , Ferroelectrics , 10 , 249 (1976).G.C. Messenger , and F.N. Coppage , IEEE Trans. Nucl. Sci. NS-35 ,1461 (1988).
[24] S.K. Dey , and R. Znleeg , Ferroelectric , 108 , 37 (1990).
[25] [15] C.A. Pazde. Araujo , L.D. Mcmillan , B.M. Melnick , J.D. Cucharo ,and J.F. Scott , Ferroelectrics , 104 , 241 (1990).
[26] K. Ramkumar , J. Lee , A. Safari , S.C. Danforth , Mat. Res. Soc.Symp. Proc. 200 , 121 (1990).
[27] 汪建民, “陶瓷技術手冊”, 中華民國產業科技發展協進會, 1994.
[28] W.D.Kingery, H.K.Bowen, and D.R.Uhlmann “Introduction to Ceramics, 2nd Edition, John Wiley&Sons, New York, (1976) .
[29] L. L. Hench and J. K. West, “ Principles of Electronic Ceramics”, John Wiley & Sons, 1990.
[30] J. B. Hudson, Surface Science, Ch17, Butterworth-Heinemann,1992.
[31] R. Waser, “Polarization, Conduction, and Breakdown in nonferroelectric Perovskite Thin Films”, Kluwer Academic. ,1995.
[32] B. Chapman, “Glow Discharge Process”, John Wiley & Sons, Inc., (1980) .
[33] O. Auciello, A. I. Kingon, and S. B. Krupanidhi, “Sputter Synthesis of Ferroelectric Films and Heterostructures”, MRS Bulletin, 20, (1996) 25.
[34] 吳泰伯, “強介電薄膜之物理氣相沉積技術”, 工業材料, 190(1996) 135.[35] J. Dieleman, E. van de Riet, and J. C. S. Kools, “Laser Ablation Deposition : Mechanism and Application,” Jpn. J. Appl. Phys., 31(6B), (1992)1964.
[36] S. K. Dey and P. V. Alluri, ”PE-MOCVD of Dielectric Thin Films: Challenge and Opportunities” ,MRS Bulletin, (1996)44.
[37] B. A. Tuttle and R. W. Schwartz, “Solution Deposition of Ferroelectric Thin Films,” MRS ulletin, (1996) 49.
[38] 陳三元,強介電薄膜之液相化學法製作,工業材料,108, 100(1995).[39] Xusheng Wang ,and Hiroshi lshiwara, Appl.Phys.Lett.82,2479 (2003).
[40] Uong Chou,Ki-Bum Kim, Hyun m. Jang , Gyu-Chul Yi Appl. Phys.Lett.79,3137 (2001).
[41] Di Wu, Aidong Li, and Naiben Ming, J. Appl. Phys. 95,4275 (2004).
[42] Takashi Watanabe, and Hiroshi Funakubo Appl. Phys. Lett. 80, 100 (2002) .
[43] S. T. Zhang,and Y. F. Chen, J. Wang and G .X. Cheng ,Z. G. Liu and N. B. Ming , Appl.Phys Lett.84,3660 (2004).